Patent US7053718B2 successfully refreshed from Google Patents.
US7053718B2
Expired / Lapsed
US
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Stacked RF power amplifier
Assignee: Qualcomm Inc
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Filing: 2003-09-25
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Granted: 2006-05-30
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Expires: 2023-09-25
Abstract
Abstract A method and apparatus provides techniques for electrically isolating switching devices in a stacked RF power amplifier, which prevents the switching devices from being subjected to high breakdown voltages. The isolation provided allows the power amplifier to be implemented on an integrated circuit.
Inventors
- 👤 Timothy J. DuPuis
- 👤 Susanne A. Paul
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:07
CPC Classifications
H; H03; H03F; H03F1/00; H03F1/52; H03F1/523; H03F3/00; H03F3/189; H03F3/19; H03F3/193; H03F3/20; H03F3/21; H03F3/211; H03F3/24; H03F3/42; H03F3/423
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
77 words
An RF power amplifier comprising: an integrated circuit; a first power amplifier formed on the integrated circuit, the first power amplifier having a first switching device; a second power amplifier tanned on the integrated circuit, the second power amplifier having a second switching device, wherein the first and second power amplifiers are connected in a stacked arrangement between a voltage supply and ground; and wherein the first and second switching devices are electrically isolated from each other.
Claim 2
Dependent Claim
77 words
An RF power amplifier comprising: an integrated circuit; a first power amplifier formed on the integrated circuit, the first power amplifier having a first switching device; a second power amplifier tanned on the integrated circuit, the second power amplifier having a second switching device, wherein the first and second power amplifiers are connected in a stacked arrangement between a voltage supply and ground; and wherein the first and second switching devices are electrically isolated from each other.
Claim 3
Dependent Claim
29 words
The RF power amplifier of claim 1 , wherein the first and second switching devices are electrically isolated by isolating the bodies of the first and second switching devices.
Claim 4
Dependent Claim
31 words
The RF power amplifier of claim 2 , wherein the bodies of the first and second switching devices are isolated by forming one of the switching devices in a deep N-well.
Claim 5
Dependent Claim
18 words
The RF power amplifier of claim 3 , wherein a bias voltage is applied to the deep N-well.
Claim 6
Dependent Claim
27 words
The RF power amplifier of claim 1 , wherein the first and second switching devices are isolated by forming the integrated circuit using N − starting material.
Claim 7
Dependent Claim
25 words
The RF power amplifier of claim 2 , wherein the bodies of the first and second switching devices are isolated using silicon on isolator technology.
Claim 8
Dependent Claim
42 words
The RF power amplifier of claim 1 , further comprising a third power amplifier formed on the integrated circuit the third power amplifier having a third switching device wherein the first, second and third switching devices are electrically isolated from each other.
Claim 9
Dependent Claim
17 words
The RF power amplifier of claim 1 , wherein the integrated circuit is implemented using CMOS technology.
Claim 10
Independent Claim
60 words
A method of making a stacked RF power amplifier comprising: providing a integrated circuit; forming first and second stacked power amplifiers on the integrated circuit, wherein the first and second stacked power amplifiers each include at least one switching device; and electrically isolating a switching device of the first power amplifier with a switching device of the second power amplifier.
Claim 11
Independent Claim
60 words
A method of making a stacked RF power amplifier comprising: providing a integrated circuit; forming first and second stacked power amplifiers on the integrated circuit, wherein the first and second stacked power amplifiers each include at least one switching device; and electrically isolating a switching device of the first power amplifier with a switching device of the second power amplifier.
Claim 12
Dependent Claim
47 words
The method of claim 9 , wherein the step of electrically isolating a switching device of the first power amplifier with a switching device of the second power amplifier further comprises isolating the body of the first switching device from the body of the second switching device.
Claim 13
Dependent Claim
16 words
The method of claim 10 , further comprising forming a deep N-well in the integrated circuit.
Claim 14
Dependent Claim
33 words
The method of claim 11 , wherein the switching device of the second power amplifier is formed using the deep N-well to provide isolation from the switching device of the first power amplifier.
Claim 15
Dependent Claim
16 words
The method of claim 12 , further comprising applying a bias voltage to the deep N-well.
Claim 16
Dependent Claim
30 words
The method of claim 10 , further comprising using silicon on isolator techniques for isolating the body of the first switching device from the body of the second switching device.
Claim 17
Dependent Claim
61 words
A stacked RF power amplifier comprising: an integrated circuit; first and second stacked power amplifiers formed on the integrated circuit, wherein each power amplifier includes at least one switching device having a substrate; and wherein the body of a switching device in the first power amplifier is electrically isolated from the body of a switching device in the second power amplifier.
Claim 18
Dependent Claim
61 words
A stacked RF power amplifier comprising: an integrated circuit; first and second stacked power amplifiers formed on the integrated circuit, wherein each power amplifier includes at least one switching device having a substrate; and wherein the body of a switching device in the first power amplifier is electrically isolated from the body of a switching device in the second power amplifier.
Claim 19
Dependent Claim
25 words
The stacked RF power amplifier of claim 15 , wherein the isolation is provided by forming one of the switching devices in a deep N-well.
Claim 20
Dependent Claim
19 words
The stacked RF power amplifier of claim 16 , wherein a bias voltage is applied to the deep N-well.
Claim 21
Dependent Claim
31 words
The stacked RF power amplifier of claim 15 , wherein the isolation is provided by forming the integrated circuit using N − starting material and forming the switching devices in P-wells.
Claim 22
Dependent Claim
21 words
The stacked RF power amplifier of claim 15 , wherein the isolation is provided by using a silicon on isolator technique.
Claim 23
Dependent Claim
18 words
The stacked RF power amplifier of claim 15 , wherein the integrated circuit is implemented using CMOS technology.
Claim 24
Dependent Claim
84 words
A stacked RF power amplifier formed on an integrated circuit comprising: a first amplifier having a first transistor formed on the integrated circuit, the first transistor of the first amplifier having a transistor body; a second amplifier having a second transistor formed on the integrated circuit, the second transistor of the second amplifier having a transistor body; and wherein the transistor body of the first transistor of the first amplifier is isolated from the transistor body of the second transistor of the second amplifier.
Claim 25
Dependent Claim
84 words
A stacked RF power amplifier formed on an integrated circuit comprising: a first amplifier having a first transistor formed on the integrated circuit, the first transistor of the first amplifier having a transistor body; a second amplifier having a second transistor formed on the integrated circuit, the second transistor of the second amplifier having a transistor body; and wherein the transistor body of the first transistor of the first amplifier is isolated from the transistor body of the second transistor of the second amplifier.
Claim 26
Dependent Claim
47 words
The stacked RF power amplifier of claim 21 , wherein the transistor body of the first transistor of the first power amplifier is isolated from the transistor body of the second transistor of the second power amplifier by forming one of the transistors in a deep N-well.
Claim 27
Dependent Claim
41 words
The stacked RF power amplifier of claim 21 , further comprising the steps of: forming the integrated circuit using N starting materials; and forming the first and second transistors of the first and second amplifiers in P-wells in the integrated circuit.
Claim 28
Dependent Claim
32 words
The stacked RF power amplifier of claim 21 , wherein the transistor bodies of the first and second transistors of the first and second amplifiers are isolated using silicon on isolator technology.
Claim 29
Dependent Claim
18 words
The stacked RF power amplifier of claim 21 , wherein the integrated circuit is implemented using CMOS technology.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2009-05-29 | 2009-11-28 | 2010-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-05-29 | 2013-11-28 | 2014-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-05-29 | 2017-11-28 | 2018-05-30 | $7700.00 | Window Closed / Lapsed |