US7026081B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical proximity correction method utilizing phase-edges as sub-resolution assist features
Assignee: ASML Netherlands BV
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Filing: 2002-05-23
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Granted: 2006-04-11
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Expires: 2022-05-23
Abstract
Abstract A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.
Inventors
- 👤 Douglas Van Den Broeke
- 👤 J. Fung Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 17:48
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/34; H; H10; H10P; H10P76/00; G03F1/36
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
86 words
A method of transferring a lithographic pattern from a photography mask onto a substrate by use of a lithographic exposure apparatus, said method comprising the steps of: forming a plurality of resolvable features to be printed on said substrate; and forming at least one non-resolvable optical proximity correction feature, said at least one non-resolvable optical proximity correction feature being a phase-edge, wherein said at least one non-resolvable phase-edge is the sole optical proximity correction feature positioned between a first resolvable feature and a second resolvable feature.
Claim 2
Independent Claim
86 words
A method of transferring a lithographic pattern from a photography mask onto a substrate by use of a lithographic exposure apparatus, said method comprising the steps of: forming a plurality of resolvable features to be printed on said substrate; and forming at least one non-resolvable optical proximity correction feature, said at least one non-resolvable optical proximity correction feature being a phase-edge, wherein said at least one non-resolvable phase-edge is the sole optical proximity correction feature positioned between a first resolvable feature and a second resolvable feature.
Claim 3
Dependent Claim
17 words
The method of claim 1 , wherein said phase-edge has a width dimension substantially equal to zero.
Claim 4
Dependent Claim
16 words
The method of claim 1 , wherein said phase-edge effects a phase-shift of greater than 0°.
Claim 5
Dependent Claim
14 words
The method of claim 1 , wherein said phase-edge effects a phase-shift of 180°.
Claim 6
Dependent Claim
14 words
The method of claim 1 , wherein said mask is illuminated utilizing off-axis illumination.
Claim 7
Independent Claim
138 words
A device manufacturing method comprising the steps of: (a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material; (b) providing a projection beam of radiation using a radiation system; (c) using a pattern on a mask to endow the projection beam with a pattern in its cross-section; (d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material, wherein, in step (c), use is made of a mask comprising: a plurality of resolvable features to be printed on said substrate; and at least one non-resolvable optical proximity correction feature, said at least one non-resolvable optical proximity correction feature being a phase-edge; wherein said at least one non-resolvable phase-edge is the sole optical proximity correction feature positioned between a first resolvable feature and a second resolvable feature.
Claim 8
Independent Claim
138 words
A device manufacturing method comprising the steps of: (a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material; (b) providing a projection beam of radiation using a radiation system; (c) using a pattern on a mask to endow the projection beam with a pattern in its cross-section; (d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material, wherein, in step (c), use is made of a mask comprising: a plurality of resolvable features to be printed on said substrate; and at least one non-resolvable optical proximity correction feature, said at least one non-resolvable optical proximity correction feature being a phase-edge; wherein said at least one non-resolvable phase-edge is the sole optical proximity correction feature positioned between a first resolvable feature and a second resolvable feature.
Claim 9
Dependent Claim
26 words
The method of claim 1 , wherein said mask comprises a quartz substrate, said at least one non-resolvable phase-edge being formed by etching said quartz substrate.
Claim 10
Dependent Claim
14 words
The method of claim 1 , wherein said mask forms a chromeless phase-shift mask.
Claim 11
Dependent Claim
38 words
The method of claim 1 , wherein said non-resolvable feature is spaced apart from said given one of said resolvable features so as to maximize the depth of focus of an imaging system for a given feature size.
Claim 12
Dependent Claim
22 words
The method of claim 1 , wherein the phase-shift effected by said phase-edge is selected so as to maintain said phase-edge sub-resolution.
Claim 13
Dependent Claim
19 words
The device manufacturing method of claim 6 , wherein said phase-edge has a width dimension substantially equal to zero.
Claim 14
Dependent Claim
18 words
The device manufacturing method of claim 6 , wherein said phase-edge effects a phase-shift of greater than 0°.
Claim 15
Dependent Claim
16 words
The device manufacturing method of claim 6 , wherein said phase-edge effects a phase-shift of 180°.
Claim 16
Dependent Claim
16 words
The device manufacturing method of claim 6 , wherein said mask forms a chromeless phase-shift mask.
Claim 17
Dependent Claim
40 words
The device manufacturing method of claim 6 , wherein said non-resolvable feature is spaced apart from said given one of said resolvable features so as to maximize the depth of focus of an imaging system for a given feature size.
Claim 18
Dependent Claim
24 words
The device manufacturing method of claim 6 , wherein the phase-shift effected by said phase-edge is selected so as to maintain said phase-edge sub-resolution.
Claim 19
Dependent Claim
16 words
The device manufacturing method of claim 6 , wherein said mask is illuminated utilizing off-axis illumination.
Claim 20
Dependent Claim
28 words
The device manufacturing method of claim 6 , wherein said mask comprises a quartz substrate, said at least one non-resolvable phase-edge being formed by etching said quartz substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-04-10 | 2009-10-10 | 2010-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-04-10 | 2013-10-10 | 2014-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-04-10 | 2017-10-10 | 2018-04-11 | $7700.00 | Window Closed / Lapsed |