US6623895B2 — Hybrid phase-shift mask

Claim 1

Independent Claim 89 words

A mask for transferring a lithographic pattern onto a wafer by use of a lithographic exposure apparatus, said mask comprising: a substrate; a first pattern corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature formed on said substrate, and a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask feature generated by etching said substrate.

Claim 2

Dependent Claim 89 words

A mask for transferring a lithographic pattern onto a wafer by use of a lithographic exposure apparatus, said mask comprising: a substrate; a first pattern corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature formed on said substrate, and a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask feature generated by etching said substrate.

Claim 3

Dependent Claim 20 words

A mask according to claim 1 , wherein said low-transmission phase-shift mask feature comprises a 5-8% transmission attenuated phase-shift mask.

Claim 4

Dependent Claim 16 words

A mask according to claim 2 , wherein said chromeless phase-shift mask feature exhibits 100% transmission.

Claim 5

Dependent Claim 24 words

A mask according to claim 2 , wherein said mask comprises a plurality of said non-critical features and a plurality of said critical features.

Claim 6

Dependent Claim 18 words

A mask according to claim 1 , wherein said low-transmission phase-shift mask feature comprises a non-phase-shifting chrome mask.

Claim 7

Dependent Claim 16 words

A mask according to claim 5 , wherein said chromeless phase-shift mask feature exhibits 100% transmission.

Claim 8

Dependent Claim 24 words

A mask according to claim 5 , wherein said mask comprises a plurality of said non-critical features and a plurality of said critical features.

Claim 9

Dependent Claim 16 words

A mask according to claim 1 , wherein said chromeless phase-shift mask feature exhibits 100% transmission.

Claim 10

Dependent Claim 24 words

A mask according to claim 8 , wherein said mask comprises a plurality of said non-critical features and a plurality of said critical features.

Claim 11

Dependent Claim 24 words

A mask according to claim 1 , wherein said mask comprises a plurality of said non-critical features and a plurality of said critical features.

Claim 12

Independent Claim 95 words

A method of forming a mask on a substrate for transferring a lithographic pattern onto a wafer by use of a lithographic exposure apparatus, said method comprising the steps of: forming a first pattern on said substrate corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask and a non-phase-shifting mask, and forming a second pattern on said substrate corresponding to at least one critical feature on said mask, said second pattern comprising a chromeless phase-shift mask generated by etching said substrate.

Claim 13

Independent Claim 95 words

A method of forming a mask on a substrate for transferring a lithographic pattern onto a wafer by use of a lithographic exposure apparatus, said method comprising the steps of: forming a first pattern on said substrate corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask and a non-phase-shifting mask, and forming a second pattern on said substrate corresponding to at least one critical feature on said mask, said second pattern comprising a chromeless phase-shift mask generated by etching said substrate.

Claim 14

Independent Claim 138 words

A method for transferring a lithographic pattern from a photolithography mask formed on a substrate onto a wafer by use of a lithographic exposure apparatus, said method comprising the steps of: forming said photolithography mask, said photolithography mask comprising: said substrate; a first pattern corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature formed on said substrate, and a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask generated by etching said substrate; and subjecting said photolithography mask to a single exposure utilizing said lithographic exposure apparatus, said single exposure operative for printing both said critical feature and said non-critical feature on said wafer.

Claim 15

Independent Claim 138 words

A method for transferring a lithographic pattern from a photolithography mask formed on a substrate onto a wafer by use of a lithographic exposure apparatus, said method comprising the steps of: forming said photolithography mask, said photolithography mask comprising: said substrate; a first pattern corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature formed on said substrate, and a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask generated by etching said substrate; and subjecting said photolithography mask to a single exposure utilizing said lithographic exposure apparatus, said single exposure operative for printing both said critical feature and said non-critical feature on said wafer.

Claim 16

Dependent Claim 19 words

A method according to claim 12 , wherein said photolithography mask is a mask according to claim 2 .

Claim 17

Dependent Claim 19 words

A method according to claim 12 , wherein said photolithography mask is a mask according to claim 5 .

Claim 18

Dependent Claim 19 words

A method according to claim 12 , wherein said photolithography mask is a mask according to claim 8 .

Claim 19

Independent Claim 149 words

A method for transferring a lithographic pattern from a photolithography mask onto a wafer by use of a lithographic exposure apparatus, said method comprising the steps of: forming a first photolithography mask on a first substrate, said first photolithography mask comprising a first pattern corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature formed on said first substrate; forming a second photolithography mask on a second substrate, said second photolithography mask comprising a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask feature generated by etching said substrate, subjecting said first photolithography mask to an exposure utilizing said lithographic exposure apparatus, and subjecting said second photolithography mask to an exposure utilizing said lithographic exposure apparatus.

Claim 20

Independent Claim 149 words

A method for transferring a lithographic pattern from a photolithography mask onto a wafer by use of a lithographic exposure apparatus, said method comprising the steps of: forming a first photolithography mask on a first substrate, said first photolithography mask comprising a first pattern corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature formed on said first substrate; forming a second photolithography mask on a second substrate, said second photolithography mask comprising a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask feature generated by etching said substrate, subjecting said first photolithography mask to an exposure utilizing said lithographic exposure apparatus, and subjecting said second photolithography mask to an exposure utilizing said lithographic exposure apparatus.

Claim 21

Dependent Claim 20 words

A method according to claim 16 , wherein said low-transmission phase-shift mask feature comprises a 5-8% transmission attenuated phase-shift mask.

Claim 22

Dependent Claim 18 words

A method according to claim 16 , wherein said low-transmission phase-shift mask feature comprises a non-phase-shifting chrome mask.

Claim 23

Dependent Claim 16 words

A method according to claim 16 , wherein said chromeless phase-shift mask feature exhibits 100% transmission.

Claim 24

Independent Claim 150 words

A device manufacturing method comprising the steps of: (a) providing a wafer that is at least partially covered by a layer of radiation-sensitive material; (b) providing a projection beam of radiation using a radiation system; (c) using a pattern on a mask to endow the projection beam with a pattern in its cross-section; (d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material, wherein, in step (c), use is made of a mask comprising: a substrate; a first pattern corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature formed on said substrate, and a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask feature generated by etching said substrate.

Claim 25

Independent Claim 150 words

A device manufacturing method comprising the steps of: (a) providing a wafer that is at least partially covered by a layer of radiation-sensitive material; (b) providing a projection beam of radiation using a radiation system; (c) using a pattern on a mask to endow the projection beam with a pattern in its cross-section; (d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material, wherein, in step (c), use is made of a mask comprising: a substrate; a first pattern corresponding to at least one non-critical feature to be printed on said wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature formed on said substrate, and a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask feature generated by etching said substrate.

Claim 26

Dependent Claim 11 words

A device manufactured using a method according to claim 20 .

Claim 27

Dependent Claim 121 words

A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate at least one file corresponding to a mask for use in a lithographic imaging process, said generation of said file comprising the steps of: generating data representing a first pattern corresponding to at least one non-critical feature to be printed on a wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature, and generating data representing a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask feature generated by etching a substrate.

Claim 28

Dependent Claim 121 words

A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate at least one file corresponding to a mask for use in a lithographic imaging process, said generation of said file comprising the steps of: generating data representing a first pattern corresponding to at least one non-critical feature to be printed on a wafer, said first pattern comprising one of a low-transmission phase-shift mask feature and a non-phase-shifting mask feature, and generating data representing a second pattern corresponding to at least one critical feature to be printed on said wafer, said second pattern comprising a chromeless phase-shift mask feature generated by etching a substrate.

Claim 29

Dependent Claim 18 words

The computer program product according to claim 22 , wherein said chromeless phase-shift mask feature exhibits 100% transmission.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2006-09-22	2007-03-24	2007-09-23	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2010-09-22	2011-03-24	2011-09-23	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2014-09-22	2015-03-24	2015-09-23	$7700.00	Window Closed / Lapsed

Hybrid phase-shift mask

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