US5795685A
Expired / Lapsed
US
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Simple repair method for phase shifting masks
Assignee: International Business Machines Corp
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Filing: 1997-01-14
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Granted: 1998-08-18
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Expires: 2017-01-14
Abstract
Abstract A method and apparatus for correcting defects in a phase shift mask to be used in photolithography. More specifically, the method of the invention includes creating a second repair mask which contains phase shifters. Regions surrounding the defects on the first mask are made opaque. The design circuitry located in these defective regions is copied onto the second mask. During a second exposure the design circuitry is placed onto the semiconductor wafer. Therefore, this method and apparatus provides an inexpensive solution to a difficult problem.
Inventors
- 👤 Lars W. Liebmann
- 👤 Burn Jeng Lin
- 👤 Mark O. Neisser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:45
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/68; G03F1/70; G03F1/72
Claims Analysis
Total Claims: 58
Claim 1
Independent Claim
61 words
A method of correcting a plurality of defects in an image enhancing mask, comprising the steps of: a) locating the plurality of defects; b) defining a plurality of repair regions; c) making the plurality of repair regions opaque on the image enhancing mask; and d) defining a pattern on an image enhancing repair mask to complement the plurality of repair regions.
Claim 2
Independent Claim
61 words
A method of correcting a plurality of defects in an image enhancing mask, comprising the steps of: a) locating the plurality of defects; b) defining a plurality of repair regions; c) making the plurality of repair regions opaque on the image enhancing mask; and d) defining a pattern on an image enhancing repair mask to complement the plurality of repair regions.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the image enhancing mask comprises phase shift openings and non-phase shift openings.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said plurality of defects are located using AIMs.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein said plurality of repair regions are defined using a CAD/CAM system.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein the image enhancing mask performs a trimming function.
Claim 7
Dependent Claim
22 words
The method of claim 1 wherein the image enhancing repair mask performs a repair function, a trimming function, and a design function.
Claim 8
Dependent Claim
15 words
The method of claim 1 wherein the image enhancing repair mask performs a design function.
Claim 9
Dependent Claim
15 words
The method of claim 1 wherein said plurality of repair regions terminate in noncritical regions.
Claim 10
Dependent Claim
13 words
The method of claim 1 wherein said plurality of repair regions include circuitry.
Claim 11
Dependent Claim
17 words
The method of claim 1 wherein the plurality of defects comprise misplaced chrome and phase shift errors.
Claim 12
Independent Claim
121 words
A method of correcting a plurality of defects in a phase shifting mask used to expose an image on a semiconductor wafer comprising the following steps: a) detecting the plurality of defects in a pattern of the phase shifting mask; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask to complement the plurality of repair regions; e) adjusting the pattern on the phase shift repair mask to align phase shifting edges; f) exposing the phase shifting mask onto the semiconductor wafer; and g) exposing the phase shifting repair mask onto the semiconductor wafer.
Claim 13
Independent Claim
121 words
A method of correcting a plurality of defects in a phase shifting mask used to expose an image on a semiconductor wafer comprising the following steps: a) detecting the plurality of defects in a pattern of the phase shifting mask; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask to complement the plurality of repair regions; e) adjusting the pattern on the phase shift repair mask to align phase shifting edges; f) exposing the phase shifting mask onto the semiconductor wafer; and g) exposing the phase shifting repair mask onto the semiconductor wafer.
Claim 14
Dependent Claim
15 words
The method of claim 11, wherein a positive photoresist is used on the semiconductor wafer.
Claim 15
Dependent Claim
15 words
The method of claim 11, wherein a negative photoresist is used on the semiconductor wafer.
Claim 16
Dependent Claim
18 words
The method of claim 11, wherein each of said exposing steps is immediately followed by a development step.
Claim 17
Dependent Claim
15 words
The method of claim 11, wherein one development step follows all of said exposure steps.
Claim 18
Independent Claim
110 words
A method of correcting a plurality of defects in a phase shift mask used to expose an image on a semiconductor wafer comprising the following steps: a) detecting the plurality of defects in the phase shift mask; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask to complement the plurality of repair regions; e) adjusting the phase shift repair mask; f) exposing the phase shift repair mask onto the semiconductor wafer; and g) exposing the phase shift mask onto the semiconductor wafer.
Claim 19
Independent Claim
110 words
A method of correcting a plurality of defects in a phase shift mask used to expose an image on a semiconductor wafer comprising the following steps: a) detecting the plurality of defects in the phase shift mask; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask to complement the plurality of repair regions; e) adjusting the phase shift repair mask; f) exposing the phase shift repair mask onto the semiconductor wafer; and g) exposing the phase shift mask onto the semiconductor wafer.
Claim 20
Dependent Claim
17 words
The method of claim 16, wherein each said exposing step is immediately followed by a development step.
Claim 21
Dependent Claim
17 words
The method of claim 16, wherein all of the exposing steps are completed before a development step.
Claim 22
Independent Claim
147 words
A method of correcting a plurality of defects in a phase shifting mask used to expose an image on a semiconductor wafer comprising the following steps: a) detecting the plurality of defects in the phase shifting mask; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask to complement the plurality of repair regions; e) adjusting the phase shift repair mask; f) defining the area on the phase shift repair mask that needs to be trimmed; g) defining a pattern on the trim mask to complement the trim area; h) exposing the phase shift mask onto the semiconductor wafer; i) exposing the phase shift repair mask onto the semiconductor wafer; and j) exposing the trim mask onto the semiconductor wafer.
Claim 23
Independent Claim
147 words
A method of correcting a plurality of defects in a phase shifting mask used to expose an image on a semiconductor wafer comprising the following steps: a) detecting the plurality of defects in the phase shifting mask; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask to complement the plurality of repair regions; e) adjusting the phase shift repair mask; f) defining the area on the phase shift repair mask that needs to be trimmed; g) defining a pattern on the trim mask to complement the trim area; h) exposing the phase shift mask onto the semiconductor wafer; i) exposing the phase shift repair mask onto the semiconductor wafer; and j) exposing the trim mask onto the semiconductor wafer.
Claim 24
Dependent Claim
17 words
The method of claim 19 wherein each said exposing step is immediately followed by a development step.
Claim 25
Dependent Claim
18 words
The method of claim 19 wherein a development step follows the completion of all the said exposing steps.
Claim 26
Dependent Claim
53 words
A phase shift mask system comprising: a phase shift mask including a plurality of phase shift openings, a plurality of non-phase shift openings, and a plurality of defects; and a phase shift repair mask including a plurality of repair areas which operatively cooperate with the plurality of defects in the phase shift mask.
Claim 27
Dependent Claim
53 words
A phase shift mask system comprising: a phase shift mask including a plurality of phase shift openings, a plurality of non-phase shift openings, and a plurality of defects; and a phase shift repair mask including a plurality of repair areas which operatively cooperate with the plurality of defects in the phase shift mask.
Claim 28
Dependent Claim
18 words
The phase shift mask system of claim 22 wherein the phase shift openings are alternating phase shifting openings.
Claim 29
Dependent Claim
18 words
The phase shift mask system of claim 22 wherein the phase shift openings are rim phase shifting openings.
Claim 30
Dependent Claim
18 words
The phase shift mask system of claim 22 wherein the phase shift openings are subresolution phase shifting openings.
Claim 31
Dependent Claim
18 words
The phase shift mask system of claim 22 wherein the phase shift openings are phase edge shifting openings.
Claim 32
Dependent Claim
18 words
The phase shift mask system of claim 22 wherein the phase shift openings are attenuated phase shifting openings.
Claim 33
Dependent Claim
18 words
The phase shift mask system of claim 22 wherein the phase shift openings are unattenuated phase shifting openings.
Claim 34
Dependent Claim
28 words
The phase shift mask system of claim 22 wherein the phase shift mask and the phase shift repair mask each include subresolution imaging with unattenuated phase shift openings.
Claim 35
Dependent Claim
17 words
The phase shift mask of claim 22, wherein the phase shift openings are chromeless phase shifting openings.
Claim 36
Dependent Claim
17 words
The phase shift mask of claim 22, wherein the phase shifting openings are Levenson phase shifting openings.
Claim 37
Dependent Claim
17 words
The phase shift mask of claim 22, wherein the phase shifting openings include outrigger phase shifting openings.
Claim 38
Dependent Claim
23 words
The phase shift mask system of claim 22, wherein the phase shift openings are used selectively depending on the critical image contrast requirement.
Claim 39
Dependent Claim
21 words
The phase shift repair mask of claim 22, wherein said phase shifting repair mask comprises phase shifters and intensity mask elements.
Claim 40
Dependent Claim
16 words
The phase shift mask system of claim 22, wherein the plurality of repairing areas include circuitry.
Claim 41
Dependent Claim
21 words
The phase shift mask system of claim 22, wherein the phase shift repair mask includes trim areas and second design areas.
Claim 42
Dependent Claim
65 words
A phase shift mask system comprising: a phase shift mask including a plurality of phase shift openings, a plurality of non-phase shift openings, and a plurality of defects; a phase shifting repair mask including a plurality of repair areas which operatively cooperate with the plurality of defects in the phase shifting mask; and a trim mask which operatively cooperates with the phase shifting repair mask.
Claim 43
Dependent Claim
65 words
A phase shift mask system comprising: a phase shift mask including a plurality of phase shift openings, a plurality of non-phase shift openings, and a plurality of defects; a phase shifting repair mask including a plurality of repair areas which operatively cooperate with the plurality of defects in the phase shifting mask; and a trim mask which operatively cooperates with the phase shifting repair mask.
Claim 44
Independent Claim
69 words
A method of collecting a plurality of defects, comprising the steps of: a) locating the plurality of defects; b) defining a plurality of repair regions; c) making the plurality of repair regions opaque on a mask which includes an image enhancing mask section and a image enhancing repair mask section; and d) defining a pattern on the image enhancing repair mask section to complement the plurality of repair regions.
Claim 45
Independent Claim
69 words
A method of collecting a plurality of defects, comprising the steps of: a) locating the plurality of defects; b) defining a plurality of repair regions; c) making the plurality of repair regions opaque on a mask which includes an image enhancing mask section and a image enhancing repair mask section; and d) defining a pattern on the image enhancing repair mask section to complement the plurality of repair regions.
Claim 46
Dependent Claim
23 words
The method of claim 38, wherein the image enhancing mask section and the image enhancing repair mask section are located on one mask.
Claim 47
Independent Claim
112 words
A method of correcting a plurality of defects comprising the following steps: a) detecting the plurality of defects in a pattern of a phase shift mask section; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask section to complement the plurality of repair regions; e) adjusting the pattern on the phase shift repair mask section to align phase shifting edges; f) exposing the phase shift mask section onto the semiconductor wafer; and g) exposing the phase shift repair mask section onto the semiconductor wafer.
Claim 48
Independent Claim
112 words
A method of correcting a plurality of defects comprising the following steps: a) detecting the plurality of defects in a pattern of a phase shift mask section; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask section to complement the plurality of repair regions; e) adjusting the pattern on the phase shift repair mask section to align phase shifting edges; f) exposing the phase shift mask section onto the semiconductor wafer; and g) exposing the phase shift repair mask section onto the semiconductor wafer.
Claim 49
Dependent Claim
22 words
The method of claim 40, wherein the phase shift mask section and phase shift repair mask section are located on one mask.
Claim 50
Independent Claim
101 words
A method of correcting a plurality of defects comprising the following steps: a) detecting the plurality of defects in a phase shift mask section; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask section to complement the plurality of repair regions; e) adjusting the phase shift repair mask section; f) exposing the phase shift repair mask section onto the semiconductor wafer; and g) exposing the phase shift mask section onto the semiconductor wafer.
Claim 51
Independent Claim
101 words
A method of correcting a plurality of defects comprising the following steps: a) detecting the plurality of defects in a phase shift mask section; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask section to complement the plurality of repair regions; e) adjusting the phase shift repair mask section; f) exposing the phase shift repair mask section onto the semiconductor wafer; and g) exposing the phase shift mask section onto the semiconductor wafer.
Claim 52
Dependent Claim
23 words
The method of claim 42, wherein the phase shift mask section and the phase shift repair mask section are located on one mask.
Claim 53
Independent Claim
141 words
A method of correcting a plurality of defects comprising the following steps: a) detecting the plurality of defects in a phase shift mask section; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask section to complement the plurality of repair regions; e) adjusting the phase shift repair mask section; f) defining the area on the phase shift repair mask section that needs to be trimmed; g) defining a pattern on a trim mask section to complement a trim area; h) exposing the phase shift mask section onto the semiconductor wafer; i) exposing the phase shift repair mask section onto the semiconductor wafer; and j) exposing the trim mask section onto the semiconductor wafer.
Claim 54
Independent Claim
141 words
A method of correcting a plurality of defects comprising the following steps: a) detecting the plurality of defects in a phase shift mask section; b) defining a plurality of repair regions surrounding each of said plurality of defects that need to be repaired; c) making the plurality of repair regions opaque; d) defining a pattern on a phase shift repair mask section to complement the plurality of repair regions; e) adjusting the phase shift repair mask section; f) defining the area on the phase shift repair mask section that needs to be trimmed; g) defining a pattern on a trim mask section to complement a trim area; h) exposing the phase shift mask section onto the semiconductor wafer; i) exposing the phase shift repair mask section onto the semiconductor wafer; and j) exposing the trim mask section onto the semiconductor wafer.
Claim 55
Dependent Claim
26 words
The method of claim 44, wherein the phase shift mask section, the phase shift repair section, and the trim mask section are located on one mask.
Claim 56
Dependent Claim
55 words
A phase shift mask system comprising: a phase shift mask section including a plurality of phase shift openings, a plurality of non-phase shift openings, and a plurality of defects; and a phase shift repair mask section including a plurality of repair areas which operatively cooperate with the plurality of defects in the phase shift mask.
Claim 57
Dependent Claim
55 words
A phase shift mask system comprising: a phase shift mask section including a plurality of phase shift openings, a plurality of non-phase shift openings, and a plurality of defects; and a phase shift repair mask section including a plurality of repair areas which operatively cooperate with the plurality of defects in the phase shift mask.
Claim 58
Dependent Claim
26 words
The phase shift mask system of claim 46, wherein the phase shift mask section and the phase shift mask repair section are located on one mask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-17 | 2002-02-16 | 2002-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-17 | 2006-02-16 | 2006-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-17 | 2010-02-16 | 2010-08-18 | $7700.00 | Window Closed / Lapsed |