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Manufacturing method of a semiconductor device incorporating a passive element and a redistribution board
Assignee: Socionext Inc
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Filing: 2003-08-29
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Granted: 2006-02-07
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Expires: 2023-08-29
Abstract
Abstract A manufacturing method of a semiconductor device incorporating a passive element includes the steps as follows: a redistribution board forming step forms a redistribution board incorporating the passive element on a base board; a semiconductor element mounting step mounts at least one semiconductor element formed on an opposite side surface of the redistribution board with regard to the base board; a base board separating step separates the base board from the redistribution board and exposes the other surface of the redistribution board; a redistribution board mounting step mounts the redistribution board on a package board via electrode pads exposed from the other surface of the redistribution board.
Inventors
- 👤 Yoshiyuki Yoneda
- 👤 Masaharu Minamizawa
- 👤 Nobutaka Shimizu
- 👤 Atsushi Kikuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:32
CPC Classifications
H; H05; H05K; H05K1/00; H05K1/02; H05K1/14; H05K1/141; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H10W; H10W40/00; H10W40/10; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/685; H10W90/00; H10W90/401; H10W90/701; H05K1/16; H05K1/162; H05K2201/00; H05K2201/04; H05K2201/049; H05K2201/10; H05K2201/10613; H05K2201/10621; H05K2201/10734; H05K2201/10954; H05K2201/10977; H10P72/7424; H10W72/00; H10W72/01; H10W72/012; H10W72/01221; H10W72/01225; H10W72/20; H10W72/251; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/851; H10W72/874; H10W72/877; H10W72/90; H10W72/941; H10W72/9415; H10W74/00; H10W74/01; H10W74/012; H10W74/10; H10W74/15; H10W90/721; H10W90/724; H10W90/731; H10W90/734
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
95 words
A manufacturing method of a semiconductor device, comprising: a step of forming an electrically conductive material film on a base board; a redistribution board forming step of forming a redistribution board on the base board, wherein the redistribution board forming step includes the step of applying copper plating on the electrically conductive material film; a base board separating step of separating the base board from the redistribution board; a semiconductor element mounting step of mounting at least one semiconductor element on the redistribution board via electrode pads formed on a surface of the redistribution board.
Claim 2
Dependent Claim
95 words
A manufacturing method of a semiconductor device, comprising: a step of forming an electrically conductive material film on a base board; a redistribution board forming step of forming a redistribution board on the base board, wherein the redistribution board forming step includes the step of applying copper plating on the electrically conductive material film; a base board separating step of separating the base board from the redistribution board; a semiconductor element mounting step of mounting at least one semiconductor element on the redistribution board via electrode pads formed on a surface of the redistribution board.
Claim 3
Dependent Claim
37 words
The manufacturing method of the semiconductor device as claimed in claim 1 , wherein the step of forming the redistribution board includes the step of forming the redistribution board incorporating a passive element on the base board.
Claim 4
Dependent Claim
41 words
The manufacturing method of the semiconductor device as claimed in claim 1 , further comprising a redistribution board mounting step of mounting the redistribution board on a package board via electrode pads formed on an other surface of the redistribution board.
Claim 5
Dependent Claim
48 words
The manufacturing method of the semiconductor device as claimed in claim 1 , wherein the base board is made of a silicon wafer, a plurality of the redistribution boards are integrally formed on said silicon wafer, and the redistribution boards are individualized after the base board removing step.
Claim 6
Dependent Claim
66 words
The manufacturing method of the semiconductor device as claimed in claim 1 , wherein: the base board is made of a sapphire board including a thin organic film formed on a surface where the redistribution board is formed; and the base board separating step includes a step irradiating a laser beam to the thin organic film via the sapphire board and vaporizing the thin organic film.
Claim 7
Dependent Claim
37 words
The manufacturing method of the semiconductor device as claimed in claim 1 , wherein: the base board is made of silicon; and the base board separating step includes a step of removing the silicon by using etching.
Claim 8
Dependent Claim
32 words
The manufacturing method of the semiconductor device as claimed in claim 6 , wherein the base board separating step includes the step of removing the silicon by using etching and grinding together.
Claim 9
Dependent Claim
38 words
The manufacturing method of the semiconductor device as claimed in claim 1 , wherein: the base board is made of copper or copper alloy; and the base board separating step includes a step of etching the base board.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2009-02-06 | 2009-08-08 | 2010-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2013-02-06 | 2013-08-08 | 2014-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2017-02-06 | 2017-08-08 | 2018-02-07 | $7700.00 | Window Closed / Lapsed |