US6977225B2
Expired / Lapsed
US
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Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants
Assignee: Mosaid Technologies Inc
•
Filing: 2003-11-12
•
Granted: 2005-12-20
•
Expires: 2023-11-12
Abstract
Abstract A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5.
Inventors
- 👤 Ravi Iyer
- 👤 Sujit Sharan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/08; H; H10; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/42; H10P14/43; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 76
Claim 1
Independent Claim
102 words
A plasma enhanced chemical vapor deposition process comprising: admitting a hydrocarbon gas into a deposition chamber; admitting titanium tetrachloride gas into the deposition chamber; forming a plasma in the deposition chamber having at a power level greater than a first ionization energy, but less than a second ionization energy, of the hydrocarbon gas for forming hydrocarbon radicals therein; and heating a substrate to a temperature for some of the hydrocarbon radicals formed from the hydrocarbon gas to react with some of the chlorine atoms from the titanium tetrachloride gas for depositing titanium metal on a portion of a surface of the substrate.
Claim 2
Dependent Claim
102 words
A plasma enhanced chemical vapor deposition process comprising: admitting a hydrocarbon gas into a deposition chamber; admitting titanium tetrachloride gas into the deposition chamber; forming a plasma in the deposition chamber having at a power level greater than a first ionization energy, but less than a second ionization energy, of the hydrocarbon gas for forming hydrocarbon radicals therein; and heating a substrate to a temperature for some of the hydrocarbon radicals formed from the hydrocarbon gas to react with some of the chlorine atoms from the titanium tetrachloride gas for depositing titanium metal on a portion of a surface of the substrate.
Claim 3
Dependent Claim
25 words
The process of claim 1 , wherein the substrate is heated to a temperature within a range of about 200° C. to about 500° C.
Claim 4
Dependent Claim
33 words
The process of claim 1 , wherein the hydrocarbon gas is selected from a group of compounds comprising C n H 2n+2 , C n H 2n and C n H 2n−2 .
Claim 5
Dependent Claim
21 words
The process of claim 1 , wherein the hydrocarbon gas comprises an alkane having fewer than five carbon atoms per molecule.
Claim 6
Dependent Claim
12 words
The process of claim 4 , wherein the hydrocarbon gas includes methane.
Claim 7
Dependent Claim
24 words
The process of claim 1 , further comprising: mounting the substrate on a susceptor; heating the susceptor; and heating the substrate using the susceptor.
Claim 8
Dependent Claim
31 words
The process of claim 1 , wherein the titanium tetrachloride gas includes a titanium tetrachloride gas mixed with a carrier gas selected from a group consisting of helium, argon and hydrogen.
Claim 9
Dependent Claim
24 words
The process of claim 7 , wherein the titanium tetrachloride gas includes titanium tetrachloride gas introduced into the carrier gas using a bubbler apparatus.
Claim 10
Dependent Claim
19 words
The process of claim 7 , wherein a liquid injector sprays the titanium tetrachloride and passes through a vaporizer.
Claim 11
Dependent Claim
28 words
The process of claim 1 , wherein the hydrocarbon gas includes a hydrocarbon gas mixed with a carrier gas selected from a group consisting of helium and argon.
Claim 12
Dependent Claim
18 words
The process of claim 1 , further comprising: removing reaction products from the deposition chamber during the process.
Claim 13
Dependent Claim
15 words
The process of claim 11 , wherein an alkyl chloride gas comprises a reaction product.
Claim 14
Dependent Claim
44 words
The process of claim 1 , wherein the deposition chamber comprises a cold wall deposition chamber, with walls thereof maintained at a temperature within a preferred range of about 100° C. to about 200° C. for preventing condensation of the titanium tetrachloride gas thereon.
Claim 15
Dependent Claim
16 words
The process of claim 1 , wherein the deposition chamber comprises a hot wall deposition chamber.
Claim 16
Dependent Claim
18 words
The process of claim 1 , wherein the plasma comprises a plasma produced with a radio frequency source.
Claim 17
Dependent Claim
31 words
The process of claim 15 , wherein the radio frequency source comprises a radio frequency source having a power setting within a range of about 20 watts to about 100 watts.
Claim 18
Dependent Claim
24 words
The process of claim 15 , wherein the radio frequency source comprises a radio frequency source having a frequency greater than about 10 KHz.
Claim 19
Dependent Claim
29 words
The process of claim 1 , wherein the deposition chamber comprises a deposition chamber for maintaining a pressure within a range of about 2 torr to about 100 torr.
Claim 20
Dependent Claim
30 words
The process of claim 1 , wherein the deposition chamber comprises a deposition chamber for maintaining a pressure within a preferred range of about 2 torr to about 5 torr.
Claim 21
Dependent Claim
24 words
The process of claim 1 , further comprising: premixing the titanium tetrachloride gas and the hydrocarbon gas before being admitted to the deposition chamber.
Claim 22
Dependent Claim
35 words
The process of claim 20 , wherein a ratio of the hydrocarbon gas to the titanium tetrachloride gas comprising the premixture thereof comprises a ratio of between about four and about one thousand to one.
Claim 23
Dependent Claim
13 words
The process of claim 1 , wherein the substrate comprises a semiconductor wafer.
Claim 24
Dependent Claim
113 words
A plasma enhanced chemical vapor deposition process comprising: admitting hydrocarbon gas into a deposition chamber; admitting titanium tetrachloride gas into the deposition chamber; forming a plasma within the deposition chamber of the hydrocarbon gas for forming hydrocarbon radicals; maintaining the plasma at a power level greater than a first ionization energy, but less than a second ionization energy, of the hydrocarbon gas for forming the hydrocarbon radicals; and heating a semiconductor wafer to a temperature sufficient to induce some of the hydrocarbon radicals to react with some chlorine atoms from the titanium tetrachloride gas for forming chlorinated hydrocarbon molecules for depositing titanium metal on a portion of a surface of the semiconductor wafer.
Claim 25
Dependent Claim
113 words
A plasma enhanced chemical vapor deposition process comprising: admitting hydrocarbon gas into a deposition chamber; admitting titanium tetrachloride gas into the deposition chamber; forming a plasma within the deposition chamber of the hydrocarbon gas for forming hydrocarbon radicals; maintaining the plasma at a power level greater than a first ionization energy, but less than a second ionization energy, of the hydrocarbon gas for forming the hydrocarbon radicals; and heating a semiconductor wafer to a temperature sufficient to induce some of the hydrocarbon radicals to react with some chlorine atoms from the titanium tetrachloride gas for forming chlorinated hydrocarbon molecules for depositing titanium metal on a portion of a surface of the semiconductor wafer.
Claim 26
Dependent Claim
26 words
The process of claim 23 , further comprising: maintaining the deposition chamber at a pressure within a range of about 2 torr to about 10 torr.
Claim 27
Dependent Claim
40 words
The process of claim 23 , wherein the power level comprises a radio frequency source operating at a power setting within a range of about 20 watts to about 100 watts and at a frequency greater than about 10 KHz.
Claim 28
Dependent Claim
45 words
The process of claim 23 , further comprising: premixing the titanium tetrachloride gas and the hydrocarbon gas for their admission to the deposition chamber in a ratio of hydrocarbon gas to the titanium tetrachloride gas being between about four and about one thousand to one.
Claim 29
Dependent Claim
12 words
The process of claim 23 , wherein the hydrocarbon gas includes methane.
Claim 30
Dependent Claim
36 words
The process of claim 23 , wherein the hydrocarbon gas includes a hydrocarbon gas selected from a group consisting of compounds C n H 2n+2 , C n H 2n and C n H 2n−2 .
Claim 31
Dependent Claim
112 words
A plasma enhanced chemical vapor deposition process comprising: flowing a hydrocarbon gas into a deposition chamber; flowing a titanium tetrachioride gas into the deposition chamber; forming a plasma in the deposition chamber using a power level substantially in a range of greater than a first ionization energy of the hydrocarbon gas to less than a second ionization energy of the hydrocarbon gas for forming hydrocarbon radicals in the hydrocarbon gas; and heating a substrate to a temperature for some of the hydrocarbon radicals formed from the hydrocarbon gas to react with some chlorine atoms from the titanium tetrachioride gas for depositing titanium metal on a portion of a surface of the substrate.
Claim 32
Dependent Claim
112 words
A plasma enhanced chemical vapor deposition process comprising: flowing a hydrocarbon gas into a deposition chamber; flowing a titanium tetrachioride gas into the deposition chamber; forming a plasma in the deposition chamber using a power level substantially in a range of greater than a first ionization energy of the hydrocarbon gas to less than a second ionization energy of the hydrocarbon gas for forming hydrocarbon radicals in the hydrocarbon gas; and heating a substrate to a temperature for some of the hydrocarbon radicals formed from the hydrocarbon gas to react with some chlorine atoms from the titanium tetrachioride gas for depositing titanium metal on a portion of a surface of the substrate.
Claim 33
Dependent Claim
25 words
The process of claim 29 , wherein the substrate is heated to a temperature within a range of about 200° C. to about 500° C.
Claim 34
Dependent Claim
32 words
The process of claim 29 , wherein the hydrocarbon gas is selected from a group of compounds comprising C n H 2n+2, C n H 2n and C n H 2n−2 .
Claim 35
Dependent Claim
21 words
The process of claim 29 , wherein the hydrocarbon gas comprises an alkane having fewer than five carbon atoms per molecule.
Claim 36
Dependent Claim
12 words
The process of claim 32 , wherein the hydrocarbon gas includes methane.
Claim 37
Dependent Claim
24 words
The process of claim 29 , further comprising: mounting the substrate on a susceptor; heating the susceptor; and heating the substrate using the susceptor.
Claim 38
Dependent Claim
31 words
The process of claim 29 , wherein the titanium tetrachioride gas includes a titanium tetrachioride gas mixed with a carrier gas selected from a group consisting of helium, argon and hydrogen.
Claim 39
Dependent Claim
24 words
The process of claim 35 , wherein the titanium tetrachioride gas includes titanium tetrachioride gas introduced into the carrier gas using a bubbler apparatus.
Claim 40
Dependent Claim
20 words
The process of claim 36 , wherein a liquid injector sprays the titanium tetrachloride gas and passes through a vaporizer.
Claim 41
Dependent Claim
28 words
The process of claim 29 , wherein the hydrocarbon gas includes a hydrocarbon gas mixed with a carrier gas selected from a group consisting of helium and argon.
Claim 42
Dependent Claim
18 words
The process of claim 29 , further comprising: removing reaction products from the deposition chamber during the process.
Claim 43
Dependent Claim
15 words
The process of claim 39 , wherein an alkyl chloride gas comprises a reaction product.
Claim 44
Dependent Claim
42 words
The process of claim 29 , wherein the deposition chamber comprises a cold wall deposition chamber, the walls thereof maintained at a temperature within a preferred range of about 100° C. to about 200° C. for preventing condensation of titanium tetrachioride thereon.
Claim 45
Dependent Claim
16 words
The process of claim 29 , wherein the deposition chamber comprises a hot wall deposition chamber.
Claim 46
Dependent Claim
17 words
The process of claim 29 , wherein the plasma comprises plasma produced by a radio frequency source.
Claim 47
Dependent Claim
31 words
The process of claim 43 , wherein the radio frequency source comprises a radio frequency source having a power setting within a range of about 20 watts to about 100 watts.
Claim 48
Dependent Claim
24 words
The process of claim 43 , wherein the radio frequency source comprises a radio frequency source having a frequency greater than about 10 KHz.
Claim 49
Dependent Claim
29 words
The process of claim 29 , wherein the deposition chamber comprises a deposition chamber for maintaining a pressure within a range of about 2 torr to about 100 torr.
Claim 50
Dependent Claim
30 words
The process of claim 29 , wherein the deposition chamber comprises a deposition chamber for maintaining a pressure within a preferred range of about 2 torr to about 5 torr.
Claim 51
Dependent Claim
23 words
The process of claim 29 , further comprising: premixing the titanium tetrachioride gas and the hydrocarbon gas before flowing into the deposition chamber.
Claim 52
Dependent Claim
35 words
The process of claim 48 , wherein a ratio of the hydrocarbon gas to the titanium tetrachioride gas comprising the premixture thereof comprises a ratio of between about four and about one thousand to one.
Claim 53
Dependent Claim
13 words
The process of claim 29 , wherein the substrate comprises a semiconductor wafer.
Claim 54
Dependent Claim
89 words
A deposition process having a hydrocarbon gas and a titanium tetrachioride gas in a chamber comprising: providing a plasma for the chamber having a power level greater than a first ionization energy and less than a second ionization energy of the hydrocarbon gas for forming hydrocarbon radicals; and heating a substrate to a temperature for some of the hydrocarbon radicals formed from the hydrocarbon gas to react with some chlorine atoms from the titanium tetrachloride gas for depositing titanium metal on a portion of a surface of the substrate.
Claim 55
Dependent Claim
89 words
A deposition process having a hydrocarbon gas and a titanium tetrachioride gas in a chamber comprising: providing a plasma for the chamber having a power level greater than a first ionization energy and less than a second ionization energy of the hydrocarbon gas for forming hydrocarbon radicals; and heating a substrate to a temperature for some of the hydrocarbon radicals formed from the hydrocarbon gas to react with some chlorine atoms from the titanium tetrachloride gas for depositing titanium metal on a portion of a surface of the substrate.
Claim 56
Dependent Claim
25 words
The process of claim 51 , wherein the substrate is heated to a temperature within a range of about 200° C. to about 500° C.
Claim 57
Dependent Claim
33 words
The process of claim 51 , wherein the hydrocarbon gas is selected from a group of compounds comprising C n H 2n+2 , C n H 2n and C n H 2n−2 .
Claim 58
Dependent Claim
21 words
The process of claim 51 , wherein the hydrocarbon gas comprises an alkane having fewer than five carbon atoms per molecule.
Claim 59
Dependent Claim
12 words
The process of claim 54 , wherein the hydrocarbon gas includes methane.
Claim 60
Dependent Claim
24 words
The process of claim 51 , further comprising: mounting the substrate on a susceptor; heating the susceptor; and heating the substrate using the susceptor.
Claim 61
Dependent Claim
31 words
The process of claim 51 , wherein the titanium tetrachioride gas includes a titanium tetrachioride gas mixed with a carrier gas selected from a group consisting of helium, argon and hydrogen.
Claim 62
Dependent Claim
24 words
The process of claim 57 , wherein the titanium tetrachioride gas includes titanium tetrachioride gas introduced into the carrier gas using a bubbler apparatus.
Claim 63
Dependent Claim
20 words
The process of claim 57 , wherein a liquid injector sprays the titanium tetrachloride gas and passes through a vaporizer.
Claim 64
Dependent Claim
28 words
The process of claim 51 , wherein the hydrocarbon gas includes a hydrocarbon gas mixed with a carrier gas selected from a group consisting of helium and argon.
Claim 65
Dependent Claim
17 words
The process of claim 51 , further comprising: removing reaction products from the chamber during the process.
Claim 66
Dependent Claim
15 words
The process of claim 61 , wherein an alkyl chloride gas comprises a reaction product.
Claim 67
Dependent Claim
43 words
The process of claim 51 , wherein the chamber comprises a cold wall deposition chamber, with walls thereof maintained at a temperature within a preferred range of about 100° C. to about 200° C. for preventing condensation of the titanium tetrachioride gas thereon.
Claim 68
Dependent Claim
15 words
The process of claim 51 , wherein the chamber comprises a hot wall deposition chamber.
Claim 69
Dependent Claim
18 words
The process of claim 51 , wherein the plasma comprises a plasma produced with a radio frequency source.
Claim 70
Dependent Claim
31 words
The process of claim 65 , wherein the radio frequency source comprises a radio frequency source having a power setting within a range of about 20 watts to about 100 watts.
Claim 71
Dependent Claim
24 words
The process of claim 65 , wherein the radio frequency source comprises a radio frequency source having a frequency greater than about 10 KHz.
Claim 72
Dependent Claim
28 words
The process of claim 51 , wherein the chamber comprises a deposition chamber for maintaining a pressure within a range of about 2 torr to about 100 torr.
Claim 73
Dependent Claim
28 words
The process of claim 51 , wherein the chamber comprises a chamber for maintaining a pressure within a preferred range of about 2 torr to about 5 torr.
Claim 74
Dependent Claim
23 words
The process of claim 51 , further comprising: premixing the titanium tetrachioride gas and the hydrocarbon gas before being admitted to the chamber.
Claim 75
Dependent Claim
35 words
The process of claim 70 , wherein a ratio of the hydrocarbon gas to the titanium tetrachloride gas comprising the premixture thereof comprises a ratio of between about four and about one thousand to one.
Claim 76
Dependent Claim
13 words
The process of claim 51 , wherein the substrate comprises a semiconductor wafer.
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