US6949830B2
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Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
Assignee: Fujitsu Ltd
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Filing: 2003-10-29
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Granted: 2005-09-27
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Expires: 2023-10-29
Abstract
Abstract A semiconductor device including an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O 2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
Inventors
- 👤 Tamotsu Owada
- 👤 Shun-ichi Fukuyama
- 👤 Hirofumi Watatani
- 👤 Kengo Inoue
- 👤 Atsuo Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:43
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6512; H10P14/6514; H10P14/6516; H10P14/6529; H10P14/6532; H10W20/075; H10W20/081; H10W20/084; H10W20/085; H10W20/093; H10W20/096; H10W20/40; H10W20/45; H10W20/47; H10W20/495; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
109 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a carbon content of at least about 18 at % and a specific dielectric constant of at least 3.0 and at most about 3.1; and said first silicon oxycarbide layer exhibiting higher adhesion, hardness and Young's modulus compared to an oxycarbide having 32.0 wt % hydrogen, 16.1 wt % carbon, 33.7 wt % oxygen, and 18.2 wt % silicon and having specific dielectric constant of 2.9
Claim 2
Dependent Claim
109 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a carbon content of at least about 18 at % and a specific dielectric constant of at least 3.0 and at most about 3.1; and said first silicon oxycarbide layer exhibiting higher adhesion, hardness and Young's modulus compared to an oxycarbide having 32.0 wt % hydrogen, 16.1 wt % carbon, 33.7 wt % oxygen, and 18.2 wt % silicon and having specific dielectric constant of 2.9
Claim 3
Dependent Claim
24 words
The semiconductor device according to claim 1 , wherein said carbon content of said first silicon oxycarbide layer is at most 25 at %.
Claim 4
Dependent Claim
43 words
The semiconductor device according to claim 1 , further comprising a low dielectric constant insulating layer formed on said first silicon oxycarbide layer, said low dielectric constant insulating layer having a specific dielectric constant lower than a specific dielectric constant of silicon oxide.
Claim 5
Dependent Claim
103 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a carbon content of at least about 18 at % and a specific dielectric constant of at most about 3.1; and further comprising a second silicon oxycarbide layer formed on said first silicon oxycarbide layer, said second silicon oxycarbide layer having the carbon content at least 1 at % smaller than the carbon content of said first silicon oxycarbide layer.
Claim 6
Dependent Claim
103 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a carbon content of at least about 18 at % and a specific dielectric constant of at most about 3.1; and further comprising a second silicon oxycarbide layer formed on said first silicon oxycarbide layer, said second silicon oxycarbide layer having the carbon content at least 1 at % smaller than the carbon content of said first silicon oxycarbide layer.
Claim 7
Dependent Claim
109 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a hydrogen content of at most 30 at % and a specific dielectric constant of at least 3.0 and at most about 3.1 ; and said first silicon oxycarbide layer exhibiting higher adhesion, hardness and Young's modulus compared to an oxycarbide having 32.0 wt % hydrogen, 16.1 wt % carbon, 33.7 wt % oxygen, and 18.2 wt % silicon and having specific dielectric constant of 2.9.
Claim 8
Dependent Claim
109 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a hydrogen content of at most 30 at % and a specific dielectric constant of at least 3.0 and at most about 3.1 ; and said first silicon oxycarbide layer exhibiting higher adhesion, hardness and Young's modulus compared to an oxycarbide having 32.0 wt % hydrogen, 16.1 wt % carbon, 33.7 wt % oxygen, and 18.2 wt % silicon and having specific dielectric constant of 2.9.
Claim 9
Dependent Claim
18 words
The semiconductor device according to claim 5 , wherein said hydrogen content is at most 28 at %.
Claim 10
Dependent Claim
43 words
The semiconductor device according to claim 5 , further comprising a low dielectric constant insulating layer formed on said first silicon oxycarbide layer, said low dielectric constant insulating layer having a specific dielectric constant lower than a specific dielectric constant of silicon oxide.
Claim 11
Dependent Claim
102 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a hydrogen content of at most 30 at % and a specific dielectric constant of at most about 3.1; and further comprising a second silicon oxycarbide layer formed on said first silicon oxycarbide layer, said second silicon oxycarbide layer having the hydrogen content at least 2 at % larger than the hydrogen content of said first silicon oxycarbide layer.
Claim 12
Dependent Claim
102 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a hydrogen content of at most 30 at % and a specific dielectric constant of at most about 3.1; and further comprising a second silicon oxycarbide layer formed on said first silicon oxycarbide layer, said second silicon oxycarbide layer having the hydrogen content at least 2 at % larger than the hydrogen content of said first silicon oxycarbide layer.
Claim 13
Dependent Claim
118 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a carbon content of at least 17 at % or a hydrogen content of at most 30 at % and a specific dielectric constant of at least 3.0 and at most about 3.1; and said first silicon oxycarbide layer exhibiting higher adhesion, hardness and Young's modulus compared to an oxycarbide having 32.0 wt % hydrogen, 16.1 wt % carbon, 33.7 wt % oxygen, and 18.2 wt % silicon and having specific dielectric constant of 2.9.
Claim 14
Dependent Claim
118 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a carbon content of at least 17 at % or a hydrogen content of at most 30 at % and a specific dielectric constant of at least 3.0 and at most about 3.1; and said first silicon oxycarbide layer exhibiting higher adhesion, hardness and Young's modulus compared to an oxycarbide having 32.0 wt % hydrogen, 16.1 wt % carbon, 33.7 wt % oxygen, and 18.2 wt % silicon and having specific dielectric constant of 2.9.
Claim 15
Dependent Claim
132 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a carbon content of at least 17 at % or a hydrogen content of at most 30 at % and a specific dielectric constant of at most about 3.1; and further comprising a second silicon oxycarbide layer formed on said first silicon oxycarbide layer, said second silicon oxycarbide layer having the carbon content at least 2 at % lower than the carbon content of said first silicon oxycarbide layer or the hydrogen content at least 2 at % larger than the hydrogen content of said first silicon oxycarbide layer.
Claim 16
Dependent Claim
132 words
A semiconductor device comprising: a semiconductor substrate; a copper wiring formed above said semiconductor substrate; a silicon carbide layer covering said copper wiring; and a first silicon oxycarbide layer covering said silicon carbide layer, said first silicon oxycarbide layer containing hydrogen and having a carbon content of at least 17 at % or a hydrogen content of at most 30 at % and a specific dielectric constant of at most about 3.1; and further comprising a second silicon oxycarbide layer formed on said first silicon oxycarbide layer, said second silicon oxycarbide layer having the carbon content at least 2 at % lower than the carbon content of said first silicon oxycarbide layer or the hydrogen content at least 2 at % larger than the hydrogen content of said first silicon oxycarbide layer.
Claim 17
Dependent Claim
43 words
The semiconductor device according to claim 10 , further comprising a low dielectric constant insulating layer formed on said first silicon oxycarbide layer, said low dielectric constant insulating layer having a specific dielectric constant lower than a specific dielectric constant of silicon oxide.
References Cited (Backward Citations)
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