US6897106B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same
Assignee: Samsung Electronics Co Ltd
•
Filing: 2003-11-12
•
Granted: 2005-05-24
•
Expires: 2023-11-12
Abstract
Abstract A semiconductor memory device that includes a composite Al 2 O 3 /HfO 2 dielectric layer with a layer thickness ratio greater than or equal to 1, and a method of manufacturing the capacitor are provided. The capacitor includes a lower electrode, a composite dielectric layer including an Al 2 O 3 dielectric layer and an HfO 2 dielectric layer sequentially formed on the lower electrode, the Al 2 O 3 dielectric layer having a thickness greater than or equal to the HfO 2 dielectric layer, and an upper electrode formed on the composite dielectric layer. The Al 2 O 3 dielectric layer has a thickness of 30-60 Å. The HfO 2 dielectric layer has a thickness of 40 Å or less.
Inventors
- 👤 Ki-yeon Park
- 👤 Sung-tae Kim
- 👤 Young-sun Kim
- 👤 In-sung Park
- 👤 Jae-hyun Yeo
- 👤 Ki-Vin Im
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:20
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10D1/692; H10D1/694; H10D1/696; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69392
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
75 words
A method of manufacturing a semiconductor memory device, the method comprising: forming a lower electrode on a semiconductor substrate; forming a composite dielectric layer on the lower electrode, the composite dielectric layer including an Al 2 O 3 dielectric layer having a first thickness an HfO 2 dielectric layer having a second thickness, the second thickness begin smaller than or equal to the first thickness; and forming an upper electrode on the composite dielectric layer.
Claim 2
Independent Claim
75 words
A method of manufacturing a semiconductor memory device, the method comprising: forming a lower electrode on a semiconductor substrate; forming a composite dielectric layer on the lower electrode, the composite dielectric layer including an Al 2 O 3 dielectric layer having a first thickness an HfO 2 dielectric layer having a second thickness, the second thickness begin smaller than or equal to the first thickness; and forming an upper electrode on the composite dielectric layer.
Claim 3
Dependent Claim
26 words
The method of claim 1 , wherein the Al 2 O 3 dielectric layer is formed using one of chemical vapor deposition and atomic layer deposition.
Claim 4
Dependent Claim
25 words
The method of claim 1 , wherein the first thickness of the Al 2 O 3 dielectric layer is in a range of 30-60 Å.
Claim 5
Dependent Claim
24 words
The method of claim 1 , wherein the HfO 2 dielectric layer is formed using one of chemical vapor deposition and atomic layer deposition.
Claim 6
Dependent Claim
24 words
The method of claim 1 , wherein the second thickness of the HfO 2 dielectric layer is smaller than or equal to 40 Å.
Claim 7
Dependent Claim
23 words
The method of claim 5 , wherein the second thickness of the HfO 2 dielectric layer is in a range of 10-40 Å.
Claim 8
Dependent Claim
21 words
The method of claim 1 , wherein the lower electrode is made of one of polysilicon, metal nitride, and noble metal.
Claim 9
Dependent Claim
34 words
The method of claim 7 , wherein the lower electrode is made of one selected from the group consisting of TiN, TaN, WN, Ru, Ir, Pt, and a composite layer of the forgoing materials.
Claim 10
Dependent Claim
21 words
The method of claim 1 , wherein the upper electrode is made of one of polysilicon, metal nitride, and noble metal.
Claim 11
Dependent Claim
34 words
A method of claim 9 , wherein the upper electrode is made of one selected from the group consisting of TiN, TaN, WN, Ru, Ir, Pt, an a composite layer of the forgoing materials.
Claim 12
Dependent Claim
14 words
The method of claim 1 , further comprising thermally treating the composite dielectric layer.
Claim 13
Dependent Claim
39 words
The method of claim 11 , wherein thermally treating the composite dielectric layer is perform in a vacuum, in an oxygen atmosphere, in an inert gas atmosphere by rapid thermal annealing, by furnace annealing, plasma annealing, or UV annealing.
References Cited (Backward Citations)
US5641702A
Cited
US5440157A
Cited
US6287965B1
Cited
US20010024387A1
Cited
KR20010082118A
Cited
US6399491B2
Cited
US6596583B2
Cited
KR20020002596A
Cited
US6660631B1
Cited
US20020115252A1
Cited
US6660660B2
Cited
KR20020034520A
Cited
US6599794B2
Cited
US6674138B1
Cited
US6693004B1
Cited
US6703277B1
Cited
US6682973B1
Cited
US6617639B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-05-23 | 2008-11-22 | 2009-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-05-23 | 2012-11-22 | 2013-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-05-23 | 2016-11-22 | 2017-05-24 | $7700.00 | Window Closed / Lapsed |