US6848295B2
Expired / Lapsed
US
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Acoustic wave sensor apparatus, method and system using wide bandgap materials
Assignee: Wayne State University
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Filing: 2002-04-17
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Granted: 2005-02-01
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Expires: 2022-04-17
Abstract
Abstract An acoustic wave sensor to detect an analyte, the sensor comprising a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy.
Inventors
- 👤 Gregory W. Auner
- 👤 Feng Zhong
- 👤 Chantelle Hughes
- 👤 Gina Shreve
- 👤 Hao Ying
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 10:16
CPC Classifications
G; G01; G01N; G01N29/00; G01N29/22; G01N29/24; G01N29/2437; B; B82; B82Y; B82Y10/00; B82Y25/00; G01N29/02; G01N29/022; G01N29/225; G01N29/226; G01N29/2418; G01N29/34; G11; G11B; G11B5/00; G11B5/84; G11B5/855; G01N2291/00; G01N2291/02; G01N2291/025; G01N2291/0255; G01N2291/0256; G01N2291/04; G01N2291/042; G01N2291/0422; G01N2291/0423; H; H01; H01F; H01F1/00; H01F1/0036; H01F1/009; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
83 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; and an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to chance the resonating frequency, wherein the immobilization layer includes a chemical linker and wherein the chemical linker is p-maleimidophenyl isocyanate.
Claim 2
Dependent Claim
83 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; and an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to chance the resonating frequency, wherein the immobilization layer includes a chemical linker and wherein the chemical linker is p-maleimidophenyl isocyanate.
Claim 3
Dependent Claim
111 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency; a laser diode arrangement capable of high frequency modulation to generate a pulsed laser light; a waveguide arrangement to transport the pulsed laser light; and a carbon implanted region to receive the pulsed laser light and to provide a bulk wave to the micro-machined arrangement.
Claim 4
Dependent Claim
111 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency; a laser diode arrangement capable of high frequency modulation to generate a pulsed laser light; a waveguide arrangement to transport the pulsed laser light; and a carbon implanted region to receive the pulsed laser light and to provide a bulk wave to the micro-machined arrangement.
Claim 5
Dependent Claim
26 words
The acoustic wave sensor of claim 2 , wherein the waveguide arrangement is fabricated using a wide bandgap semiconductor material using plasma source molecular beam epitaxy.
Claim 6
Dependent Claim
15 words
The acoustic wave sensor of claim 3 , wherein the waveguide arrangement includes aluminum nitride.
Claim 7
Dependent Claim
15 words
The acoustic wave sensor of claim 2 , further comprising an array of waveguide arrangements.
Claim 8
Dependent Claim
25 words
The acoustic wave sensor of claim 2 , wherein the sensor includes a photonic waveguide coupling to reduce noise and cross-talk at a high frequency.
Claim 9
Dependent Claim
79 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; and an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein the sensor is operable to detect 5 molecules of 100,000 daltons.
Claim 10
Dependent Claim
79 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; and an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein the sensor is operable to detect 5 molecules of 100,000 daltons.
Claim 11
Dependent Claim
95 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; and an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein the sensor is operable to detect a binding of a monolayer of oxygen to less than 1% of a 100 μm×100 μm surface area of the sensor.
Claim 12
Dependent Claim
95 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; and an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein the sensor is operable to detect a binding of a monolayer of oxygen to less than 1% of a 100 μm×100 μm surface area of the sensor.
Claim 13
Independent Claim
80 words
A method for operating an acoustic wave sensor, comprising: generating an acoustic wave; directing the acoustic wave to transverse a micro-machined arrangement; detecting a resonating frequency of the micro-machined arrangement; determining a presence of an analyte based on the detected resonating frequency, wherein the analyte contains a target structure that binds to an immobilization layer of the micro-machined arrangement; providing a laser light from a laser diode via a waveguide arrangement; and receiving the laser light in a carbon-implanted region.
Claim 14
Independent Claim
80 words
A method for operating an acoustic wave sensor, comprising: generating an acoustic wave; directing the acoustic wave to transverse a micro-machined arrangement; detecting a resonating frequency of the micro-machined arrangement; determining a presence of an analyte based on the detected resonating frequency, wherein the analyte contains a target structure that binds to an immobilization layer of the micro-machined arrangement; providing a laser light from a laser diode via a waveguide arrangement; and receiving the laser light in a carbon-implanted region.
Claim 15
Dependent Claim
126 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; and an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein: the micro-machined arrangement includes a wide bandgap semiconductor material; the sensor is operable in a surface acoustic mode; the sensor is operable in a surface transverse mode; the sensor is operable in a liquid medium and maintains a high sensitivity without a severe attenuation; the immobilization layer includes a chemical linker; and the chemical linker is p-maleimidophenyl isocyanate.
Claim 16
Dependent Claim
126 words
An acoustic wave sensor to detect an analyte, comprising: a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy; a micro-machined arrangement having a resonating frequency; and an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein: the micro-machined arrangement includes a wide bandgap semiconductor material; the sensor is operable in a surface acoustic mode; the sensor is operable in a surface transverse mode; the sensor is operable in a liquid medium and maintains a high sensitivity without a severe attenuation; the immobilization layer includes a chemical linker; and the chemical linker is p-maleimidophenyl isocyanate.
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| 3.5 Years (Year 4) | 2008-02-01 | 2008-08-02 | 2009-02-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-02-01 | 2012-08-02 | 2013-02-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-02-01 | 2016-08-02 | 2017-02-01 | $7700.00 | Window Closed / Lapsed |