US6282357B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Optical waveguide, acousto-optic deflector and manufacturing method thereof
Assignee: Minolta Co Ltd
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Filing: 1999-08-31
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Granted: 2001-08-28
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Expires: 2019-08-31
Abstract
Abstract An acousto-optic deflector which has a thin film waveguide layer on a buffer layer formed on a substrate and an IDT and light incidence/emergence means on the thin film waveguide layer. As the thin film waveguide layer, a piezoelectric material such as a ZnO film is used. As the substrate, a material with a resistivity of not more than 20 OMEGAcm is used. Sezawa waves are excited on the thin film waveguide layer by the IDT, and a laser beam traveling in the thin film waveguide layer is deflected by the Sezawa waves. If the ZnO thin film waveguide layer has a thickness of h and if the excited Sezawa waves have a wavelength of lambd, 0.2<h/lambd<0.5 is fulfilled.
Inventors
- 👤 Michio Kadota
- 👤 Tsuyoshi Iwamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:53
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/29; G02F1/33; G02F1/335
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
36 words
An optical waveguide comprising: a substrate which is made of silicon with a resistivity of not more than 20 Ωcm; a buffer layer formed on the substrate; and a waveguide layer formed on the buffer layer.
Claim 2
Dependent Claim
36 words
An optical waveguide comprising: a substrate which is made of silicon with a resistivity of not more than 20 Ωcm; a buffer layer formed on the substrate; and a waveguide layer formed on the buffer layer.
Claim 3
Dependent Claim
17 words
An optical waveguide as claimed in claim 1 , wherein the waveguide layer is a ZnO film.
Claim 4
Dependent Claim
40 words
An optical waveguide as claimed in claim 2 , wherein the following condition is fulfilled: 0.2 <h/λ< 0.5 wherein h is a thickness of the ZnO film and λ is a wavelength of Sezawa waves excited on the ZnO film.
Claim 5
Dependent Claim
18 words
An optical waveguide as claimed in claim 1 , wherein the buffer layer is an SiO 2 film.
Claim 6
Dependent Claim
22 words
An optical waveguide as claimed in claim 1 , wherein the buffer layer has a thickness of not less than 4000 Å.
Claim 7
Independent Claim
46 words
A method of producing an optical waveguide, the method comprising the steps of: forming a buffer layer on a substrate which is made of silicon with a resistivity of not more than 20 Ωcm; and forming a piezoelectric thin film waveguide layer on the buffer layer.
Claim 8
Independent Claim
46 words
A method of producing an optical waveguide, the method comprising the steps of: forming a buffer layer on a substrate which is made of silicon with a resistivity of not more than 20 Ωcm; and forming a piezoelectric thin film waveguide layer on the buffer layer.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 6 , wherein the piezoelectric thin film waveguide layer is a ZnO film.
Claim 10
Dependent Claim
18 words
A method as claimed in claim 7 , wherein the ZnO film is formed by a sputtering method.
Claim 11
Dependent Claim
47 words
A method as claimed in claim 7 , wherein the ZnO film is so formed such that the following condition is fulfilled: 0.2 <h/λ< 0.5 wherein h is a thickness of the ZnO film and λ is a wavelength of Sezawa waves excited on the ZnO film.
Claim 12
Dependent Claim
21 words
A method as claimed in claim 6 , wherein the buffer layer has a thickness of not less than 4000 Å.
Claim 13
Dependent Claim
17 words
A method as claimed in claim 6 , wherein the buffer layer is an SiO 2 film.
Claim 14
Dependent Claim
21 words
A method as claimed in claim 11 , wherein the SiO 2 film is formed by thermally oxidizing the silicon substrate.
Claim 15
Dependent Claim
76 words
An acousto-optic deflector comprising: a substrate which is made of silicon with a resistivity of not more than 20 Ωcm; a buffer layer formed on the substrate; a piezoelectric thin film waveguide layer formed on the buffer layer; and an interdigital transducer which is so formed to abut on the piezoelectric thin film waveguide layer and excites Sezawa waves on the waveguide layer; wherein, light traveling in the waveguide layer is deflected by the Sezawa waves.
Claim 16
Dependent Claim
76 words
An acousto-optic deflector comprising: a substrate which is made of silicon with a resistivity of not more than 20 Ωcm; a buffer layer formed on the substrate; a piezoelectric thin film waveguide layer formed on the buffer layer; and an interdigital transducer which is so formed to abut on the piezoelectric thin film waveguide layer and excites Sezawa waves on the waveguide layer; wherein, light traveling in the waveguide layer is deflected by the Sezawa waves.
Claim 17
Dependent Claim
20 words
An acousto-optic deflector as claimed in claim 13 , wherein the piezoelectric thin film waveguide layer is a ZnO film.
Claim 18
Dependent Claim
41 words
An acousto-optic deflector as claimed in claim 14 , wherein the following condition is fulfilled: 0.2 <h/λ< 0.5 wherein h is a thickness of the ZnO film and λ is a wavelength of the Sezawa waves excited on the ZnO film.
Claim 19
Dependent Claim
18 words
An acousto-optic deflector as claimed in claim 13 , wherein the buffer layer is an SiO 2 film.
Claim 20
Dependent Claim
22 words
An acousto-optic deflector as claimed in claim 13 , wherein the buffer layer has a thickness of not less than 4000 Å.
Claim 21
Independent Claim
57 words
A method of producing an acousto-optic deflector, the method comprising the steps of: forming a buffer layer on a substrate which is made of silicon with a resistivity of not more than 20 Ωcm; forming a piezoelectric thin film waveguide layer on the buffer layer; and forming an interdigital transducer on the piezoelectric thin film waveguide layer.
Claim 22
Independent Claim
57 words
A method of producing an acousto-optic deflector, the method comprising the steps of: forming a buffer layer on a substrate which is made of silicon with a resistivity of not more than 20 Ωcm; forming a piezoelectric thin film waveguide layer on the buffer layer; and forming an interdigital transducer on the piezoelectric thin film waveguide layer.
Claim 23
Dependent Claim
19 words
A method as claimed in claim 18 , wherein the piezoelectric thin film waveguide layer is a ZnO film.
Claim 24
Dependent Claim
46 words
A method as claimed in claim 19 , wherein the ZnO film is so formed that the following condition is fulfilled: 0.2 <h/λ< 0.5 wherein h is a thickness of the ZnO film and λ is a wavelength of Sezawa waves excited on the ZnO film.
Claim 25
Dependent Claim
21 words
A method as claimed in claim 18 , wherein the buffer layer has a thickness of not less than 4000 Å.
Claim 26
Dependent Claim
17 words
A method as claimed in claim 18 , wherein the buffer layer is an SiO 2 film.
Claim 27
Dependent Claim
21 words
A method as claimed in claim 22 , wherein the SiO 2 film is formed by thermally oxidizing the silicon substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-08-27 | 2005-02-26 | 2005-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-27 | 2009-02-26 | 2009-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-27 | 2013-02-26 | 2013-08-28 | $7700.00 | Window Closed / Lapsed |