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US6839125B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Method for optimizing an illumination source using full resist simulation and process window response metric

Assignee: ASML Netherlands BV
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Filing: 2003-02-11
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Granted: 2005-01-04
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Expires: 2023-02-11
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Abstract

Abstract A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using full resist calculation, the lithographic apparatus comprising an illuminator, a projection system, and a mask having a pattern to be printed in a layer of photoresist material formed on a substrate. This method includes defining a lithographic 0problem, which may include a lithographic pattern to be printed on a wafer; choosing a resist model of a resist process to be used to print a pattern in the layer of photoresist material; selecting a grid of source points in a pupil plane of the illuminator; calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the resist model; and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.

Inventors

  • 👤 Steven George Hansen

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 11:26
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70491; G03F7/705; G03F7/70058; G03F7/70091; G03F7/701; G03F7/70108

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 133 words
A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using full resist calculation, the lithographic apparatus comprising an illuminator, a projection system, and a mask having a pattern to be printed in a layer of photoresist material formed on a substrate, the method comprising: defining a lithographic pattern to be printed on a wafer; choosing a resist model of a resist process to be used to print the pattern in the layer of photoresist material; selecting a grid of source points in a pupil plane of the illuminator; calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the resist model; and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.
Claim 2
Independent Claim 133 words
A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using full resist calculation, the lithographic apparatus comprising an illuminator, a projection system, and a mask having a pattern to be printed in a layer of photoresist material formed on a substrate, the method comprising: defining a lithographic pattern to be printed on a wafer; choosing a resist model of a resist process to be used to print the pattern in the layer of photoresist material; selecting a grid of source points in a pupil plane of the illuminator; calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the resist model; and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.
Claim 3
Dependent Claim 30 words
A method according to claim 1 , wherein the response is a focus exposure matrix and results in a process window that includes dose latitude and depth of focus information.
Claim 4
Dependent Claim 30 words
A method according to claim 1 , further comprising calculating of response of trial illumination schemes by averaging separate responses for the individual source points contained within the illumination arrangement.
Claim 5
Dependent Claim 36 words
A method according to claim 1 , wherein the response is E1:1, dense to isolated feature bias, arbitrary feature size biases, sidelobe printing, film loss, sidewall angle, mask error enhancement factor, linear resolution, or absolute resolution.
Claim 6
Dependent Claim 20 words
A method according to claim 1 , further comprising mapping the responses as a function of individual source points positions.
Claim 7
Dependent Claim 17 words
A method according to claim 3 , further comprising applying a dose weighted averaging of the responses.
Claim 8
Dependent Claim 24 words
A method according to claim 1 , wherein the simulated grid results are interpolated to increase the grid point density to aid in averaging.
Claim 9
Dependent Claim 50 words
A method according to claim 1 , wherein adjusting the illumination arrangement includes adjusting the illumination arrangement by varying a position of an axicon/zoom module relative to a pyramidal prism, a position of a diffractive optical element, a position of an aperture blade, or by adjusting a programmable mirror array.
Claim 10
Dependent Claim 19 words
A method according to claim 8 , wherein the grid spacing is within a range from 0.01 to 0.2.
Claim 11
Dependent Claim 18 words
A method according to claim 1 , wherein defining the illumination arrangement includes selecting a multipole illuminator arrangement.
Claim 12
Dependent Claim 22 words
A method according to claim 1 , wherein defining the illumination arrangement includes defining an illumination arrangement with a multipole generating clement.
Claim 13
Dependent Claim 21 words
A method according to claim 1 , wherein the resist model is a calibrated model capable of adequately predicting experimental results.
Claim 14
Dependent Claim 35 words
A method according to claim 1 , wherein defining the resist model includes defining a resist model taking into account at least one of vector effects, non-zero diffusion of active species, and finite dissolution contrast.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2008-01-04 2008-07-05 2009-01-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2012-01-04 2012-07-05 2013-01-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2016-01-04 2016-07-05 2017-01-04 $7700.00 Window Closed / Lapsed

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