Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
133 words
A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using full resist calculation, the lithographic apparatus comprising an illuminator, a projection system, and a mask having a pattern to be printed in a layer of photoresist material formed on a substrate, the method comprising: defining a lithographic pattern to be printed on a wafer; choosing a resist model of a resist process to be used to print the pattern in the layer of photoresist material; selecting a grid of source points in a pupil plane of the illuminator; calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the resist model; and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.
Claim 2
Independent Claim
133 words
A method for optimizing the illumination conditions of a lithographic apparatus by computer simulation using full resist calculation, the lithographic apparatus comprising an illuminator, a projection system, and a mask having a pattern to be printed in a layer of photoresist material formed on a substrate, the method comprising: defining a lithographic pattern to be printed on a wafer; choosing a resist model of a resist process to be used to print the pattern in the layer of photoresist material; selecting a grid of source points in a pupil plane of the illuminator; calculating separate responses for individual source points, each of the responses representing a result of a single or series of simulations using the resist model; and adjusting an illumination arrangement based on analysis of accumulated results of the separate calculations.
Claim 3
Dependent Claim
30 words
A method according to claim 1 , wherein the response is a focus exposure matrix and results in a process window that includes dose latitude and depth of focus information.
Claim 4
Dependent Claim
30 words
A method according to claim 1 , further comprising calculating of response of trial illumination schemes by averaging separate responses for the individual source points contained within the illumination arrangement.
Claim 5
Dependent Claim
36 words
A method according to claim 1 , wherein the response is E1:1, dense to isolated feature bias, arbitrary feature size biases, sidelobe printing, film loss, sidewall angle, mask error enhancement factor, linear resolution, or absolute resolution.
Claim 6
Dependent Claim
20 words
A method according to claim 1 , further comprising mapping the responses as a function of individual source points positions.
Claim 7
Dependent Claim
17 words
A method according to claim 3 , further comprising applying a dose weighted averaging of the responses.
Claim 8
Dependent Claim
24 words
A method according to claim 1 , wherein the simulated grid results are interpolated to increase the grid point density to aid in averaging.
Claim 9
Dependent Claim
50 words
A method according to claim 1 , wherein adjusting the illumination arrangement includes adjusting the illumination arrangement by varying a position of an axicon/zoom module relative to a pyramidal prism, a position of a diffractive optical element, a position of an aperture blade, or by adjusting a programmable mirror array.
Claim 10
Dependent Claim
19 words
A method according to claim 8 , wherein the grid spacing is within a range from 0.01 to 0.2.
Claim 11
Dependent Claim
18 words
A method according to claim 1 , wherein defining the illumination arrangement includes selecting a multipole illuminator arrangement.
Claim 12
Dependent Claim
22 words
A method according to claim 1 , wherein defining the illumination arrangement includes defining an illumination arrangement with a multipole generating clement.
Claim 13
Dependent Claim
21 words
A method according to claim 1 , wherein the resist model is a calibrated model capable of adequately predicting experimental results.
Claim 14
Dependent Claim
35 words
A method according to claim 1 , wherein defining the resist model includes defining a resist model taking into account at least one of vector effects, non-zero diffusion of active species, and finite dissolution contrast.