US6830980B2
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Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regions
Assignee: Texas Instruments Inc
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Filing: 2003-03-20
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Granted: 2004-12-14
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Expires: 2023-03-20
Abstract
Abstract Semiconductor device fabrication methods are provided in which a carbon-containing region is formed in a wafer to inhibit diffusion of dopants during fabrication. Front-end thermal processing operations, such as oxidation and/or anneal processes, are performed at high temperatures for short durations in order to mitigate out-diffusion of carbon from the carbon-containing region, such that carbon remains to inhibit or mitigate dopant diffusion.
Inventors
- 👤 Majid Movahed Mansoori
- 👤 Donald S. Miles
- 👤 Srinivasan Chakravarthi
- 👤 P R Chidambaram
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:22
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/60; H10D30/601; H10D62/00; H10D62/80; H10D62/83; H10P30/208; H10P30/222; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
49 words
A method of fabricating a semiconductor device in a wafer, comprising: forming a carbon-containing region in the wafer; and performing at least one front-end oxidation or anneal process using a high temperature, short duration thermal process to mitigate out-diffusion of carbon from the carbon-containing region during front-end fabrication processing.
Claim 2
Independent Claim
49 words
A method of fabricating a semiconductor device in a wafer, comprising: forming a carbon-containing region in the wafer; and performing at least one front-end oxidation or anneal process using a high temperature, short duration thermal process to mitigate out-diffusion of carbon from the carbon-containing region during front-end fabrication processing.
Claim 3
Dependent Claim
21 words
The method of claim 1 , wherein forming the carbon-containing region comprises implanting carbon or a carbon-containing species in the wafer.
Claim 4
Dependent Claim
21 words
The method of claim 1 , wherein forming the carbon-containing region comprises growing an epitaxial carbon-containing layer over a semiconductor body.
Claim 5
Dependent Claim
18 words
The method of claim 3 , further comprising growing an epitaxial silicon cap layer over the carbon-containing layer.
Claim 6
Dependent Claim
53 words
The method of claim 1 , wherein performing at least one front-end oxidation or anneal process using a high temperature, short duration thermal process comprises forming a pad oxide layer using an oxidation process at a temperature of about 1000 degrees C. or more for a duration of about 60 seconds or less.
Claim 7
Dependent Claim
22 words
The method of claim 5 , wherein the oxidation process is performed at a temperature of about 1050 degrees C. or more.
Claim 8
Dependent Claim
22 words
The method of claim 5 , wherein the oxidation process is performed at a temperature of about 1100 degrees C. or more.
Claim 9
Dependent Claim
21 words
The method of claim 5 , wherein the oxidation process is performed for a duration of about 30 seconds or less.
Claim 10
Dependent Claim
21 words
The method of claim 5 , wherein the oxidation process is performed at a pressure of about 10 Torr or less.
Claim 11
Dependent Claim
27 words
The method of claim 1 , wherein the at least one front-end oxidation or anneal process is performed at a pressure of about 10 Torr or less.
Claim 12
Dependent Claim
59 words
The method of claim 1 , wherein performing at least one front-end oxidation or anneal process using a high temperature, short duration thermal process comprises forming a liner oxide layer during a shallow trench isolation process using an oxidation process at a temperature of about 1000 degrees C. or more for a duration of about 60 seconds or less.
Claim 13
Dependent Claim
22 words
The method of claim 11 , wherein the oxidation process is performed at a temperature of about 1050 degrees C. or more.
Claim 14
Dependent Claim
22 words
The method of claim 11 , wherein the oxidation process is performed at a temperature of about 1100 degrees C. or more.
Claim 15
Dependent Claim
21 words
The method of claim 11 , wherein the oxidation process is performed for a duration of about 30 seconds or less.
Claim 16
Dependent Claim
21 words
The method of claim 11 , wherein the oxidation process is performed at a pressure of about 10 Torr or less.
Claim 17
Dependent Claim
53 words
The method of claim 1 , wherein performing at least one front-end oxidation or anneal process using a high temperature, short duration thermal process comprises forming a gate oxide layer using an oxidation process at a temperature of about 1000 degrees C. or more for a duration of about 60 seconds or less.
Claim 18
Dependent Claim
22 words
The method of claim 16 , wherein the oxidation process is performed at a temperature of about 1050 degrees C. or more.
Claim 19
Dependent Claim
22 words
The method of claim 16 , wherein the oxidation process is performed at a temperature of about 1100 degrees C. or more.
Claim 20
Dependent Claim
21 words
The method of claim 16 , wherein the oxidation process is performed for a duration of about 30 seconds or less.
Claim 21
Dependent Claim
21 words
The method of claim 16 , wherein the oxidation process is performed at a pressure of about 10 Torr or less.
Claim 22
Dependent Claim
46 words
The method of claim 16 , wherein performing at least one front-end oxidation or anneal process further comprises forming a pad oxide layer using an oxidation process at a temperature of about 1000 degrees C. or more for a duration of about 60 seconds or less.
Claim 23
Dependent Claim
52 words
The method of claim 21 , wherein performing at least one front-end oxidation or anneal process further comprises forming a liner oxide layer during a shallow trench isolation process using an oxidation process at a temperature of about 1000 degrees C. or more for a duration of about 60 seconds or less.
Claim 24
Dependent Claim
44 words
The method of claim 22 , wherein performing at least one front-end oxidation or anneal process further comprises performing a channel implant damage anneal process at a temperature of about 1050 degrees C. or more for a duration of about 60 seconds or less.
Claim 25
Dependent Claim
52 words
The method of claim 16 , wherein performing at least one front-end oxidation or anneal process further comprises forming a liner oxide layer during a shallow trench isolation process using an oxidation process at a temperature of about 1000 degrees C. or more for a duration of about 60 seconds or less.
Claim 26
Dependent Claim
44 words
The method of claim 1 , wherein performing at least one front-end oxidation or anneal process further comprises performing a channel implant damage anneal process at a temperature of about 1050 degrees C. or more for a duration of about 60 seconds or less.
Claim 27
Dependent Claim
33 words
The method of claim 1 , wherein the carbon-containing region extends into at least a portion of one of a shallow junction extension region, a deep source/drain region, and a doped gate structure.
Claim 28
Independent Claim
87 words
A method of fabricating a semiconductor device in a wafer, comprising: forming a carbon-containing region in the wafer; and forming at least one of a pad oxide layer, a liner oxide layer, and a gate oxide layer over said carbon-containing region by performing an oxidation process at a temperature of about 1000 degrees C. or more and a pressure of about 10 Torr or less for a duration of about 60 seconds or less to mitigate out-diffusion of carbon from the carbon-containing region during front-end fabrication processing.
Claim 29
Independent Claim
87 words
A method of fabricating a semiconductor device in a wafer, comprising: forming a carbon-containing region in the wafer; and forming at least one of a pad oxide layer, a liner oxide layer, and a gate oxide layer over said carbon-containing region by performing an oxidation process at a temperature of about 1000 degrees C. or more and a pressure of about 10 Torr or less for a duration of about 60 seconds or less to mitigate out-diffusion of carbon from the carbon-containing region during front-end fabrication processing.
Claim 30
Dependent Claim
22 words
The method of claim 27 , wherein the oxidation process is performed at a temperature of about 1050 degrees C. or more.
Claim 31
Dependent Claim
22 words
The method of claim 27 , wherein the oxidation process is performed at a temperature of about 1100 degrees C. or more.
Claim 32
Dependent Claim
17 words
The method of claim 27 , wherein the oxidation process is an in-situ steam generation oxidation process.
Claim 33
Dependent Claim
31 words
The method of claim 27 , wherein the oxidation process is performed at a temperature of about 1000 degrees C. or more for a duration of about 30 seconds or less.
Claim 34
Dependent Claim
33 words
The method of claim 27 , wherein the carbon-containing region extends into at least a portion of one of a shallow junction extension region, a deep source/drain region, and a doped gate structure.
Claim 35
Independent Claim
64 words
A method of fabricating a semiconductor device in a wafer, comprising: forming a carbon-containing region in the wafer; and performing an anneal process at a temperature of about 1050 degrees C. or more and a pressure of about 10 Torr or less for a duration of about 60 seconds or less to mitigate out-diffusion of carbon from the carbon-containing region during front-end fabrication processing.
Claim 36
Independent Claim
64 words
A method of fabricating a semiconductor device in a wafer, comprising: forming a carbon-containing region in the wafer; and performing an anneal process at a temperature of about 1050 degrees C. or more and a pressure of about 10 Torr or less for a duration of about 60 seconds or less to mitigate out-diffusion of carbon from the carbon-containing region during front-end fabrication processing.
Claim 37
Dependent Claim
31 words
The method of claim 33 , wherein the anneal process is performed at a temperature of about 1100 degrees C. or more for a duration of about 60 seconds or less.
Claim 38
Dependent Claim
31 words
The method of claim 33 , wherein the anneal process is performed at a temperature of about 1100 degrees C. or more for a duration of about 30 seconds or less.
Claim 39
Dependent Claim
31 words
The method of claim 33 , wherein the anneal process is performed at a temperature of about 1100 degrees C. or more for a duration of about 30 seconds or less.
Claim 40
Dependent Claim
17 words
The method of claim 33 , wherein the anneal process is an in-situ steam generation anneal process.
Claim 41
Dependent Claim
33 words
The method of claim 33 , wherein the carbon-containing region extends into at least a portion of one of a shallow junction extension region, a deep source/drain region, and a doped gate structure.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2007-12-14 | 2008-06-14 | 2008-12-14 | $2000.00 | Window Closed / Lapsed |
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