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US6815739B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Radio frequency microelectromechanical systems (MEMS) devices on low-temperature co-fired ceramic (LTCC) substrates

Assignee: Corporation for National Research Initiatives
•
Filing: 2002-05-20
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Granted: 2004-11-09
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Expires: 2022-05-20
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Abstract

Abstract A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (“MEMS”) and low-temperature co-fired ceramic (“LTCC”) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules and a MEMS device fabricated on one of the modules. Once fabrication of the MEMS device is completed, the two ceramic modules are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module has also cavities at the backside for mounting integrated circuits. The internal layers are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.

Inventors

  • 👤 Michael A. Huff
  • 👤 Mehmet Ozgur

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 15:26
CPC Classifications
B; B82; B82Y; B82Y30/00; B81; B81B; B81B7/00; B81B7/0032; B81B7/0064; H; H01; H01G; H01G5/00; H01G5/16; H01G5/18; H01G5/40; H01P; H01P1/00; H01P1/10; H01P1/12; H01P1/127; H01P1/18; H01P1/184; H01Q; H01Q1/00; H01Q1/36; H01Q1/38; H01Q15/00; H01Q15/0006; H01Q15/0013; H01Q15/004; H01Q21/00; H01Q21/0087; H01Q3/00; H01Q3/26; B81B2201/00; B81B2201/01; B81B2201/012; B81B2201/016; B81B2207/00; B81B2207/01; B81B2207/015; B81B2207/07; B81B2207/09; B81B2207/091; B81B2207/092; B81B2207/094; B81B2207/095; B81B2207/096; B81C; B81C2203/00; B81C2203/01; B81C2203/0118; B81C2203/03; B81C2203/033; B81C2203/035; H01H; H01H57/00; H01H2057/006; H01H59/00; H01H59/0009; H01H2059/0072; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K1/16; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W90/00; H10W90/701; H10W90/721; H10W90/724

Claims Analysis

Total Claims: 153
Claim 1
Independent Claim 91 words
A radio frequency device compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device, a second substrate comprised of a second plurality of LTCC layers forming a second circuit used in the operation of the device, and at least one microelectromechanical (“MEMS”) device between the first and second substrates, wherein the second substrate is bonded to the first substrate so as to enclose the at least one MEMS device between the first and second substrates.
Claim 2
Dependent Claim 91 words
A radio frequency device compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device, a second substrate comprised of a second plurality of LTCC layers forming a second circuit used in the operation of the device, and at least one microelectromechanical (“MEMS”) device between the first and second substrates, wherein the second substrate is bonded to the first substrate so as to enclose the at least one MEMS device between the first and second substrates.
Claim 3
Dependent Claim 32 words
The radio frequency device recited in claim 1 , wherein the second substrate is bonded to the first substrate to form a hermetically sealed chamber containing the at least one MEMS device.
Claim 4
Dependent Claim 33 words
The radio frequency device recited in claim 1 further comprising a plurality of vertical interconnects extending through and interconnecting the first and second pluralities of LTCC layers comprising the first and second substrates.
Claim 5
Dependent Claim 37 words
The radio frequency device recited in claim 1 wherein the first plurality of LTCC layers comprising the first substrate includes a buffer layer that is a substrate on which the at least one MEMS device is fabricated.
Claim 6
Dependent Claim 21 words
The radio frequency device recited in claim 1 further comprising at least one integrated circuit (“IC”) bonded to the first substrate.
Claim 7
Dependent Claim 33 words
The radio frequency device recited in claim 5 wherein the first plurality of LTCC layers includes an interconnect layer through which the at least one integrated circuit is connected to the first substrate.
Claim 8
Dependent Claim 22 words
The radio frequency device recited in claim 1 further comprising a plurality of discrete components buried-in the first plurality of LTCC layers.
Claim 9
Dependent Claim 21 words
The radio frequency device recited in claim 7 wherein the plurality of buried-in discrete components includes components resistors, capacitors and/or inductors.
Claim 10
Dependent Claim 36 words
The radio frequency device recited in claim 1 wherein the first and second pluralities of LTCC layers each include at least one passive microwave device selected from the group consisting of transmission lines, couplers and dividers.
Claim 11
Dependent Claim 35 words
The radio frequency device recited in claim 5 wherein the first plurality of LTCC layers includes a cavity in which the at least one integrated circuit is bonded to the first plurality of LTCC layers.
Claim 12
Dependent Claim 31 words
The radio frequency device recited in claim 5 wherein the at least one integrated circuit includes at least one circuit from the group consisting of low-frequency analog/digital ICs, MMICS, and RFICs.
Claim 13
Dependent Claim 62 words
The radio frequency device recited in claim 5 wherein the at least one integrated circuit includes at least one circuit from the group consisting of a control circuit for the MEMS device, a power module for the MEMS device, a microprocessor, a signal processor, a high frequency power amplifier, a high frequency low noise amplifier, and high frequency up and down converters.
Claim 14
Dependent Claim 45 words
The radio frequency device recited in claim 5 wherein the second plurality of LTCC layers further comprises includes a ground shielding extending through the second plurality of LTCC layers to shield the at least one MEMS device or IC from radiating components in other layers.
Claim 15
Dependent Claim 27 words
The radio frequency device recited in claim 1 wherein the first and second pluralities of LTCC layers include ground planes for shielding the first and second circuits.
Claim 16
Dependent Claim 19 words
The radio frequency device recited in claim 4 wherein the buffer layer is comprised of a plurality of layers.
Claim 17
Dependent Claim 30 words
The radio frequency device recited in claim 5 wherein the integrated circuits are flip-chip bonded to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 18
Dependent Claim 29 words
The radio frequency device recited in claim 5 wherein the integrated circuits are wire-bonded to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 19
Dependent Claim 30 words
The radio frequency device recited in claim 5 wherein the integrated circuits are flip-chip bonded to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 20
Dependent Claim 29 words
The radio frequency device recited in claim 5 wherein the integrated circuits are wire-bonded to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 21
Dependent Claim 99 words
A radio frequency system compromising: at least one microelectromechanical (“MEMS”) device, at least a first plurality of LTCC layers forming at least one first circuit used in the operation of the MEMS device, at least a second plurality of LTCC layers forming at least one second circuit used in the operation of the MEMS device, the MEMS device being formed between the first and second pluralities of LTCC layers, the second plurality of LTCC layers being bonded to the first plurality of LTCC layers whereby the MEMS device is enclosed between the first and second pluralities of LTCC layers.
Claim 22
Dependent Claim 99 words
A radio frequency system compromising: at least one microelectromechanical (“MEMS”) device, at least a first plurality of LTCC layers forming at least one first circuit used in the operation of the MEMS device, at least a second plurality of LTCC layers forming at least one second circuit used in the operation of the MEMS device, the MEMS device being formed between the first and second pluralities of LTCC layers, the second plurality of LTCC layers being bonded to the first plurality of LTCC layers whereby the MEMS device is enclosed between the first and second pluralities of LTCC layers.
Claim 23
Dependent Claim 37 words
The radio frequency system recited in claim 20 wherein the second plurality of LTCC layers is bonded to the first plurality of LTCC layers to form a hermetically sealed chamber containing the at least one MEMS device.
Claim 24
Dependent Claim 34 words
The radio frequency system recited in claim 20 wherein the first plurality of LTCC layers includes a buffer layer that serves as a substrate on which the at least one MEMS device is fabricated.
Claim 25
Dependent Claim 23 words
The radio frequency system recited in claim 20 further comprising at least one integrated circuit bonded to the first plurality of LTCC layers.
Claim 26
Dependent Claim 32 words
The radio frequency system recited in claim 23 further comprising a plurality of integrated circuits including at least one circuit selected from the group consisting of low-frequency analog/digital ICs, MMICs, and RFICs.
Claim 27
Dependent Claim 59 words
The radio frequency system recited in claim 23 further comprising a plurality of integrated circuits including at least one circuit selected from the group consisting of a control circuit for the MEMS device, a power module for the MEMS device, a microprocessor, a signal processor, a high frequency power amplifier, a high frequency low noise amplifier, high frequency down-converters.
Claim 28
Dependent Claim 100 words
A MEMS device comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a layer between the first and second ceramic modules including at least one microelectromechanical (“MEMS”) switch forming at least one phase-shifter, the second ceramic module being bonded to the first ceramic module to thereby form a cavity in which the MEMS switch is located.
Claim 29
Dependent Claim 100 words
A MEMS device comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a layer between the first and second ceramic modules including at least one microelectromechanical (“MEMS”) switch forming at least one phase-shifter, the second ceramic module being bonded to the first ceramic module to thereby form a cavity in which the MEMS switch is located.
Claim 30
Dependent Claim 17 words
The MEMS device of claim 26 , wherein the ceramic modules are formed using an LTCC process.
Claim 31
Dependent Claim 17 words
The MEMS device of claim 26 , wherein the ceramic modules are formed using an HTCC process.
Claim 32
Dependent Claim 17 words
The MEMS device of claim 27 , wherein the ceramic modules are formed from 943 Green Tape™.
Claim 33
Dependent Claim 120 words
A MEMS device comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer, a buffer layer, and a plurality of interconnections between the at least one first circuit layer and the buffer layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a cover layer, a plurality of radiation layers, and a plurality of interconnections between the second circuit layer, cover layer, and radiation layers; and a layer between the first and second ceramic modules including at least one microelectromechanical switch forming at least one phase-shifter.
Claim 34
Dependent Claim 120 words
A MEMS device comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer, a buffer layer, and a plurality of interconnections between the at least one first circuit layer and the buffer layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a cover layer, a plurality of radiation layers, and a plurality of interconnections between the second circuit layer, cover layer, and radiation layers; and a layer between the first and second ceramic modules including at least one microelectromechanical switch forming at least one phase-shifter.
Claim 35
Dependent Claim 50 words
The MEMS device of claim 30 further comprising a plurality of integrated circuits mounted on the first ceramic module, and wherein the first plurality of dielectric layers further includes a plurality of interconnecting layers for connecting the integrated circuits to the dielectric layers forming the first and second ceramic modules.
Claim 36
Dependent Claim 17 words
The MEMS device of claim 30 , wherein the ceramic modules are formed using an LTCC process.
Claim 37
Dependent Claim 17 words
The MEMS device of claim 30 , wherein the ceramic modules are formed using an HTCC process.
Claim 38
Dependent Claim 150 words
A MEMS device comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a layer between the first and second ceramic modules including at least one microelectromechanical (“MEMS”) switch, the second ceramic module being bonded to the first ceramic module, to thereby form a cavity in which the MEMS switch is located, a plurality of integrated circuits mounted on the first ceramic module, a plurality of interconnecting layers extending through the first plurality of dielectric layers for connecting the integrated circuits to the dielectric layers forming the first and second ceramic modules, and a plurality of discrete components buried-in the first and second pluralities of dielectric layers.
Claim 39
Dependent Claim 150 words
A MEMS device comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a layer between the first and second ceramic modules including at least one microelectromechanical (“MEMS”) switch, the second ceramic module being bonded to the first ceramic module, to thereby form a cavity in which the MEMS switch is located, a plurality of integrated circuits mounted on the first ceramic module, a plurality of interconnecting layers extending through the first plurality of dielectric layers for connecting the integrated circuits to the dielectric layers forming the first and second ceramic modules, and a plurality of discrete components buried-in the first and second pluralities of dielectric layers.
Claim 40
Dependent Claim 17 words
The MEMS device of claim 34 , wherein the ceramic modules are formed using an LTCC process.
Claim 41
Dependent Claim 17 words
The MEMS device of claim 35 , wherein the ceramic modules are formed from 943 Green Tape™.
Claim 42
Dependent Claim 17 words
The MEMS device of claim 34 , wherein the ceramic modules are formed using an HTCC process.
Claim 43
Dependent Claim 110 words
An electrical device comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer, a buffer layer, and a plurality of interconnections between the at least one circuit layer and the buffer layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a cover layer, and a plurality of interconnections between the second circuit layer and the cover layer; and a layer formed between the first and second ceramic modules including at least one microelectromechanical (“MEMS”) switch.
Claim 44
Dependent Claim 110 words
An electrical device comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer, a buffer layer, and a plurality of interconnections between the at least one circuit layer and the buffer layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a cover layer, and a plurality of interconnections between the second circuit layer and the cover layer; and a layer formed between the first and second ceramic modules including at least one microelectromechanical (“MEMS”) switch.
Claim 45
Dependent Claim 45 words
The electrical device of claim 38 further comprising a plurality of integrated circuits mounted on the first ceramic module, the first plurality of dielectric layers further including interconnecting layers for connecting the integrated circuits to the dielectric layers forming the first and second ceramic modules.
Claim 46
Dependent Claim 30 words
The electrical device recited in claim 39 wherein the plurality of integrated circuits includes at least one circuit selected from the group consisting of low-frequency analog/digital ICs, MMICs, and RFICs.
Claim 47
Dependent Claim 58 words
The electrical device recited in claim 39 wherein the plurality of integrated circuits includes at least one circuit selected from the group consisting of a control circuit for the electrical device, a power module for the electrical device, a microprocessor, a signal processor, a high frequency power amplifier, a high frequency low noise amplifier, a high frequency down-converter.
Claim 48
Dependent Claim 17 words
The electrical device of claim 38 , wherein the ceramic modules are formed using an LTCC process.
Claim 49
Dependent Claim 17 words
The electrical device of claim 38 , wherein the ceramic modules are formed using an HTCC process.
Claim 50
Dependent Claim 69 words
A radio frequency device compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers, a second substrate comprised of a second plurality of LTCC layers, and at least one microelectromechanical (“MEMS”) device between the first and second substrates, wherein the second substrate is bonded to the first substrate so as to enclose the at least one MEMS device between the first and second substrates.
Claim 51
Dependent Claim 69 words
A radio frequency device compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers, a second substrate comprised of a second plurality of LTCC layers, and at least one microelectromechanical (“MEMS”) device between the first and second substrates, wherein the second substrate is bonded to the first substrate so as to enclose the at least one MEMS device between the first and second substrates.
Claim 52
Dependent Claim 16 words
The radio frequency device as recited in claim 44 wherein said device is a tunable capacitor.
Claim 53
Dependent Claim 15 words
The radio frequency device as recited in claim 44 wherein said device is an attenuator.
Claim 54
Dependent Claim 15 words
The radio frequency device as recited in claim 44 wherein said device is a filter.
Claim 55
Dependent Claim 16 words
The radio frequency device as recited in claim 44 wherein said device is a reconfigurable antenna.
Claim 56
Dependent Claim 17 words
The radio frequency device as recited in claim 44 wherein said device is a reconfigurable power amplifier.
Claim 57
Dependent Claim 16 words
The radio frequency device as recited in claim 44 wherein said device is a low-noise amplifier.
Claim 58
Dependent Claim 17 words
The radio frequency device as recited in claim 44 wherein said device is a variable controlled oscillator.
Claim 59
Dependent Claim 15 words
The radio frequency device as recited in claim 44 wherein said device is a mixer.
Claim 60
Dependent Claim 16 words
The radio frequency device as recited in claim 44 wherein said device is a variable capacitor.
Claim 61
Dependent Claim 17 words
The MEMS device of claim 27 , wherein the ceramic modules are formed from 951 Green Tape™.
Claim 62
Dependent Claim 17 words
The MEMS device of claim 35 , wherein the ceramic modules are formed from 951 Green Tape™.
Claim 63
Independent Claim 102 words
A device which operates at radio frequencies compromising: at least one microelectromechanical (“MEMS”) variable capacitor, a first substrate on which the MEMS variable capacitor is fabricated, the first substrate being comprised of a first plurality of tow-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device, and a second substrate comprised of a second plurality of LTCC layers forming at least a second circuit used in the operation of the device; and wherein the second substrate is bonded to the first substrate so as to enclose the MEMS variable capacitor between the first and second substrates.
Claim 64
Independent Claim 102 words
A device which operates at radio frequencies compromising: at least one microelectromechanical (“MEMS”) variable capacitor, a first substrate on which the MEMS variable capacitor is fabricated, the first substrate being comprised of a first plurality of tow-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device, and a second substrate comprised of a second plurality of LTCC layers forming at least a second circuit used in the operation of the device; and wherein the second substrate is bonded to the first substrate so as to enclose the MEMS variable capacitor between the first and second substrates.
Claim 65
Dependent Claim 27 words
The device recited in claim 56 wherein the second substrate is bonded to the first substrate to form a hermetically sealed chamber containing the MEMS variable capacitor.
Claim 66
Dependent Claim 30 words
The device recited in claim 56 wherein the first and second pluralities of LTCC layers comprising the first and second substrates are interconnected by vertical interconnects extending through the layers.
Claim 67
Dependent Claim 34 words
The device recited in claim 56 wherein the first plurality of LTCC layers comprising the first substrate includes a buffer layer that serves as a substrate on which the MEMS variable capacitor is fabricated.
Claim 68
Dependent Claim 33 words
The device recited in claim 56 wherein the variable capacitor includes a movable electrode and wherein applied electrostatic actuation voltage deflects the movable electrode to thereby change the capacitance of the variable capacitor.
Claim 69
Dependent Claim 31 words
The device recited in claim 56 wherein the variable capacitor includes shaped electrodes whereby the relationship between the applied electrostatic actuation voltage and the capacitance of the variable capacitor is linear.
Claim 70
Dependent Claim 34 words
The device recited in claim 60 wherein the variable capacitor includes mechanical barriers to stop the deflection of the movable electrode at a predefined position to thereby set the tuning range of the device.
Claim 71
Dependent Claim 36 words
The device recited in claim 60 wherein the variable capacitor includes non-linear springs that provide a non-linear mechanical restoring force to the movable electrode so as to compensate for non-linearity in the applied electrostatic actuation voltage.
Claim 72
Dependent Claim 36 words
The device recited in claim 60 wherein the variable capacitor includes at least four electrodes so to provide for a two-port device and thereby de-couple the capacitance of the device from the actuation of said device.
Claim 73
Dependent Claim 18 words
The device recited in claim 56 further comprising at least one integrated circuit bonded to the first substrate.
Claim 74
Dependent Claim 31 words
The device recited in claim 65 wherein the first plurality of LTCC layers includes an interconnect layer through which the at least one integrated circuit is connected to the first substrate.
Claim 75
Dependent Claim 22 words
The device recited in claim 56 wherein the first plurality of LTCC layers includes a plurality of discrete components buried-in said layers.
Claim 76
Dependent Claim 29 words
The device recited in claim 67 wherein the first plurality of buried-in discrete components contains at least one component from the group consisting of is resistors, capacitors and inductors.
Claim 77
Dependent Claim 32 words
The device recited in claim 56 wherein the first and second pluralities of LTCC layers include at least one passive microwave device from the group consisting of transmission lines, couplers and dividers.
Claim 78
Dependent Claim 30 words
The device recited in claim 65 wherein the first plurality of LTCC layers includes a cavity in which the integrated circuits are bonded to the first plurality of LTCC layers.
Claim 79
Dependent Claim 26 words
The device recited in claim 70 wherein the integrated circuits include at least one circuit from a group consisting of low-frequency analog/digital ICs, MMICS, and RFICs.
Claim 80
Dependent Claim 56 words
The device recited in claim 70 wherein the integrated circuits include at least one circuit from a group consisting of a control circuit for the MEMS capacitor, a power module for the MEMS capacitor, a microprocessor, a signal processor, a high frequency power amplifier, a high frequency low noise amplifier, high frequency up and down converters.
Claim 81
Dependent Claim 34 words
The device recited in claim 65 wherein the second plurality of LTCC layers includes a ground shielding extending through said layers to shield the MEMS capacitor or IC from radiating components in other layers.
Claim 82
Dependent Claim 25 words
The device recited in claim 56 wherein the first and second pluralities of LTCC layers include ground planes for shielding the first and second circuits.
Claim 83
Dependent Claim 15 words
The device recited in claim 58 wherein the buffer layer is a plurality of layers.
Claim 84
Dependent Claim 28 words
The device recited in claim 70 wherein the integrated circuits are flip-chip bonded to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 85
Dependent Claim 27 words
The device recited in claim 70 wherein the integrated circuits are wire-bonded to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 86
Dependent Claim 28 words
The device recited in claim 70 wherein the integrated circuits are flip-chip bonded to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 87
Dependent Claim 27 words
The device recited in claim 70 wherein the integrated circuits are wire-bonded to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 88
Dependent Claim 30 words
The device recited in claim 70 wherein the integrated circuits are connected to the variable capacitor so as to provide electrical control and closed-loop control of the variable capacitor value.
Claim 89
Dependent Claim 87 words
A microelectromechanical variable capacitor device which operates at radio frequencies compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device, and a second substrate comprised of a second plurality of LTCC layers forming at least a second circuit used in the operation of the device; and wherein the second substrate is bonded to the first substrate so as to enclose the MEMS variable capacitor device between the first and second substrates.
Claim 90
Dependent Claim 87 words
A microelectromechanical variable capacitor device which operates at radio frequencies compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device, and a second substrate comprised of a second plurality of LTCC layers forming at least a second circuit used in the operation of the device; and wherein the second substrate is bonded to the first substrate so as to enclose the MEMS variable capacitor device between the first and second substrates.
Claim 91
Dependent Claim 29 words
The MEMS device recited in claim 81 wherein the second substrate is bonded to the first substrate to form a hermetically sealed chamber containing the MEMS variable capacitor device.
Claim 92
Dependent Claim 31 words
The MEMS device recited in claim 81 wherein the first and second pluralities of LTCC layers comprising the first and second substrates are interconnected by vertical interconnects extending through the layers.
Claim 93
Dependent Claim 37 words
The MEMS device recited in claim 81 wherein the first plurality of LTCC layers comprising the first substrate includes a buffer layer that serves as a substrate on which that the MEMS variable capacitor device is fabricated.
Claim 94
Dependent Claim 28 words
The MEMS device recited in claim 81 wherein the variable capacitor device employs electrostatic actuation to deflect the movable electrode and thereby change the capacitance of the device.
Claim 95
Dependent Claim 31 words
The MEMS device recited in claim 85 wherein the variable capacitor device employs electrodes that are shaped so as to linearize the applied electrostatic voltage versus capacitance relationship of the device.
Claim 96
Dependent Claim 36 words
The MEMS device recited in claim 81 wherein the variable capacitor device employs mechanical barriers to stop the deflection of the movable electrode at a predefined location and thereby set the tuning range of the device.
Claim 97
Dependent Claim 45 words
The MEMS device recited in claim 81 wherein the variable capacitor device uses non-linear springs so as to provide a non-linear mechanical restoring force to the movable electrode of the variable capacitor whereby the non-linear spring compensates for the non-linearity of the electrostatic actuation force.
Claim 98
Dependent Claim 38 words
The MEMS device recited in claim 81 wherein the variable capacitor device employs at least four electrodes so to provide for a two-port device and thereby de-couple the capacitance of the device from the actuation of said device.
Claim 99
Dependent Claim 21 words
The MEMS variable capacitor device recited in claim 81 further comprising at least one integrated circuit bonded to the first substrate.
Claim 100
Dependent Claim 34 words
The MEMS variable capacitor device recited in claim 90 wherein the first plurality of LTCC layers includes an interconnect layer through which the at least one integrated circuit is connected to the first substrate.
Claim 101
Dependent Claim 25 words
The MEMS variable capacitor device recited in claim 81 wherein the first plurality of LTCC layers includes a plurality of discrete components buried-in said layers.
Claim 102
Dependent Claim 33 words
The MEMS variable capacitor device recited in claim 92 wherein the first plurality of buried-in discrete components contains at least one component from the group consisting of is resistors, or capacitors and inductors.
Claim 103
Dependent Claim 35 words
The MEMS variable capacitor device recited in claim 92 wherein the first and second pluralities of LTCC layers include at least one passive microwave device from the group consisting of transmission lines, couplers and dividers.
Claim 104
Dependent Claim 33 words
The MEMS variable capacitor device recited in claim 92 wherein the first plurality of LTCC layers includes a cavity in which the integrated circuits are bonded to the first plurality of LTCC layers.
Claim 105
Dependent Claim 29 words
The MEMS variable capacitor device recited in claim 92 wherein the integrated circuits include at least one circuit from a group consisting of low-frequency analog/digital ICs, MMICS, and RFICs.
Claim 106
Dependent Claim 43 words
The MEMS variable capacitor device recited in claim 92 wherein the integrated circuits include at least one circuit from a group consisting of a control circuit for the MEMS variable capacitor device, a power module for the MEMS variable capacitor device, a microprocessor.
Claim 107
Dependent Claim 39 words
The MEMS variable capacitor device recited in claim 92 wherein the second plurality of LTCC layers includes a ground shielding extending through said layers to shield the variable capacitor MEMS device or IC from radiating components in other layers.
Claim 108
Dependent Claim 28 words
The MEMS variable capacitor device recited in claim 92 wherein the first and second pluralities of LTCC layers include ground planes for shielding the first and second circuits.
Claim 109
Dependent Claim 18 words
The MEMS variable capacitor device recited in claim 89 wherein the buffer layer is a plurality of layers.
Claim 110
Dependent Claim 31 words
The MEMS variable capacitor device recited in claim 91 wherein the integrated circuits are flip-chip bonded to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 111
Dependent Claim 30 words
The MEMS variable capacitor device recited in claim 91 wherein the integrated circuits are wire-bonded to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 112
Dependent Claim 31 words
The MEMS variable capacitor device recited in claim 93 wherein the integrated circuits are flip-chip bonded to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 113
Dependent Claim 30 words
The MEMS variable capacitor device recited in claim 93 wherein the integrated circuits are wire-bonded to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.
Claim 114
Dependent Claim 26 words
The MEMS variable capacitor device recited in claim 81 wherein the capacitance of the device is adjusted by application of an electrical signal to said device.
Claim 115
Dependent Claim 16 words
The MEMS variable capacitor device recited in claim 105 wherein the variable capacitor is actuated electrostatically.
Claim 116
Dependent Claim 31 words
The MEMS variable capacitor device recited in claim 105 wherein the variable capacitor is electrostatically and zipper actuated so as to increase the tuning range of said MEMS variable capacitor device.
Claim 117
Dependent Claim 31 words
The MEMS device recited in claim 107 wherein the variable capacitor device includes electrodes that are shaped so as to linearize the applied electrostatic voltage versus capacitance relationship of the device.
Claim 118
Dependent Claim 36 words
The MEMS device recited in claim 107 wherein the variable capacitor device includes mechanical barriers to stop the deflection of the movable electrode at a predefined location and thereby set the tuning range of the device.
Claim 119
Dependent Claim 38 words
The MEMS device recited in claim 107 wherein the variable capacitor device includes at least four electrodes so to provide for a two-port device and thereby de-couples the capacitance of the device from the actuation of said device.
Claim 120
Dependent Claim 23 words
The MEMS variable capacitor device recited in claim 107 wherein the variable capacitor includes mechanical stops that prevent shorting of the capacitor electrodes.
Claim 121
Dependent Claim 112 words
A microelectromechanical (MEMS) tunable inductor device which operates at radio frequencies compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device, a second substrate comprised of a second plurality of LTCC layers forming at least a second circuit used in the operation of the device; a plurality of radio frequency (“RF”) microelectromechanical switches fabricated on the first substrate, a network of parallel inductors also fabricated on the first substrate, and wherein the second substrate is bonded to the first substrate so as to enclose the RF MEMS switches and inductors between the first and second substrates.
Claim 122
Dependent Claim 112 words
A microelectromechanical (MEMS) tunable inductor device which operates at radio frequencies compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device, a second substrate comprised of a second plurality of LTCC layers forming at least a second circuit used in the operation of the device; a plurality of radio frequency (“RF”) microelectromechanical switches fabricated on the first substrate, a network of parallel inductors also fabricated on the first substrate, and wherein the second substrate is bonded to the first substrate so as to enclose the RF MEMS switches and inductors between the first and second substrates.
Claim 123
Dependent Claim 31 words
The MEMS device recited in claim 112 wherein the second substrate is bonded to the first substrate to form a hermetically sealed chamber containing the plurality of MEMS switches and inductors.
Claim 124
Dependent Claim 31 words
The MEMS device recited in claim 112 wherein the first and second pluralities of LTCC layers comprising the first and second substrates are interconnected by vertical interconnects extending through the layers.
Claim 125
Dependent Claim 39 words
The MEMS device recited in claim 112 wherein the first plurality of LTCC layers comprising the first substrate includes a buffer layer that serves as a substrate on which a plurality of MEMS switches and inductors devices are fabricated.
Claim 126
Dependent Claim 31 words
The MEMS device recited in claim 112 wherein the plurality of MEMS switch devices are actuated by the application of an electrostatic voltage to select the desired inductor in the network.
Claim 127
Dependent Claim 130 words
A microelectromechanical systems (MEMS) tunable inductor-capacitor network device which operates at radio frequencies compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device or system, a second substrate comprised of a second plurality of LTCC layers forming at least a second circuit used in the operation of the device, a plurality of RF microelectromechanical switches fabricated on the first substrate, a network of parallel inductor devices formed on the first substrate, and at least one variable capacitor device formed on the first substrate, wherein the second substrate is bonded to the first substrate so as to enclose the at least one MEMS switches and inductor and capacitor devices between the first and second substrates.
Claim 128
Dependent Claim 130 words
A microelectromechanical systems (MEMS) tunable inductor-capacitor network device which operates at radio frequencies compromising: a first substrate comprised of a first plurality of low-temperature co-fired ceramic (“LTCC”) layers forming a first circuit used in the operation of the device or system, a second substrate comprised of a second plurality of LTCC layers forming at least a second circuit used in the operation of the device, a plurality of RF microelectromechanical switches fabricated on the first substrate, a network of parallel inductor devices formed on the first substrate, and at least one variable capacitor device formed on the first substrate, wherein the second substrate is bonded to the first substrate so as to enclose the at least one MEMS switches and inductor and capacitor devices between the first and second substrates.
Claim 129
Dependent Claim 33 words
The MEMS device recited in claim 117 wherein the second substrate is bonded to the first substrate to form a hermetically sealed chamber containing the plurality of MEMS switches and MEMS variable capacitors.
Claim 130
Dependent Claim 31 words
The MEMS device recited in claim 117 wherein the first and second pluralities of LTCC layers comprising the first and second substrates are interconnected by vertical interconnects extending through the layers.
Claim 131
Dependent Claim 39 words
The MEMS device recited in claim 117 wherein the first plurality of LTCC layers comprising the first substrate includes a buffer layer that serves as a substrate on which a plurality of MEMS switches and inductors devices are fabricated.
Claim 132
Dependent Claim 25 words
The MEMS device recited in claim 117 wherein the plurality of MEMS switch devices employ electrostatic actuation to select the desired inductor in the network.
Claim 133
Dependent Claim 26 words
The MEMS device recited in claim 117 wherein the plurality of MEMS variable capacitor devices employ electrostatic actuation to select the desired inductor in the network.
Claim 134
Dependent Claim 17 words
The MEMS device recited in claim 117 wherein the tunable inductor-capacitor network is used a tunable filter.
Claim 135
Dependent Claim 99 words
An array antenna comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a layer between the first and second ceramic modules including at least one microelectromechanical switch (“MEMS”) forming at least one phase-shifter, a second ceramic module being bonded to the first ceramic module and thereby forming a cavity on top of the MEMS switch.
Claim 136
Dependent Claim 99 words
An array antenna comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a layer between the first and second ceramic modules including at least one microelectromechanical switch (“MEMS”) forming at least one phase-shifter, a second ceramic module being bonded to the first ceramic module and thereby forming a cavity on top of the MEMS switch.
Claim 137
Dependent Claim 17 words
The array antenna of claim 124 , wherein the ceramic modules are formed using an LTCC process.
Claim 138
Dependent Claim 17 words
The array antenna of claim 124 , wherein the ceramic modules are formed using an HTCC process.
Claim 139
Dependent Claim 121 words
An array antenna comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer, a buffer layer, and a plurality of interconnections between the at least one first circuit layer and the buffer layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a cover layer, a plurality of radiation layers, and a plurality of interconnections between the second circuit layer, cover layer, and radiation layers; and a layer between the first and second ceramic modules including at least one microelectromechanical switch (“MEMS”) forming at least one phase-shifter.
Claim 140
Dependent Claim 121 words
An array antenna comprising: a first ceramic module formed from of a first plurality of dielectric layers, the first plurality of dielectric layers including at least one first circuit layer, a buffer layer, and a plurality of interconnections between the at least one first circuit layer and the buffer layer; a second ceramic module formed from of a second plurality of dielectric layers, the second plurality of dielectric layers including at least one second circuit layer, a cover layer, a plurality of radiation layers, and a plurality of interconnections between the second circuit layer, cover layer, and radiation layers; and a layer between the first and second ceramic modules including at least one microelectromechanical switch (“MEMS”) forming at least one phase-shifter.
Claim 141
Dependent Claim 45 words
The array antenna of claim 127 further comprising a plurality of integrated circuits mounted on the first ceramic module, the first plurality of dielectric layers further including interconnecting layers for connecting the integrated circuits to the dielectric layers forming the first and second ceramic modules.
Claim 142
Dependent Claim 17 words
The array antenna of claim 127 , wherein the ceramic modules are formed using an LTCC process.
Claim 143
Dependent Claim 17 words
The array antenna of claim 127 , wherein the ceramic modules are formed using an HTCC process.
Claim 144
Dependent Claim 118 words
A radio frequency system compromising: a plurality of modules formed on a low-temperature co-fired ceramic (“LTCC”) wafer, each of the modules including: at least one microelectromechanical (“MEMS”) device, at least a first plurality of LTCC layers forming at least one first circuit used in the operation of the MEMS device, and at least a second plurality of LTCC layers forming at least one second circuit used in the operation of the MEMS device, Wherein the MEMS device is formed between the first and second plurality of LTCC layers, the second plurality of LTCC layers being bonded to the first plurality of LTCC layers whereby the MEMS device is enclosed between the first and second pluralities of LTCC layers.
Claim 145
Dependent Claim 118 words
A radio frequency system compromising: a plurality of modules formed on a low-temperature co-fired ceramic (“LTCC”) wafer, each of the modules including: at least one microelectromechanical (“MEMS”) device, at least a first plurality of LTCC layers forming at least one first circuit used in the operation of the MEMS device, and at least a second plurality of LTCC layers forming at least one second circuit used in the operation of the MEMS device, Wherein the MEMS device is formed between the first and second plurality of LTCC layers, the second plurality of LTCC layers being bonded to the first plurality of LTCC layers whereby the MEMS device is enclosed between the first and second pluralities of LTCC layers.
Claim 146
Dependent Claim 17 words
The MEMS device of claim 32 , wherein the ceramic modules are formed from 943 Green Tape™.
Claim 147
Dependent Claim 17 words
The MEMS device of claim 32 , wherein the ceramic modules are formed from 951 Green Tape™.
Claim 148
Dependent Claim 17 words
The MEMS device of claim 42 , wherein the ceramic modules are formed from 943 Green Tape™.
Claim 149
Dependent Claim 17 words
The MEMS device of claim 42 , wherein the ceramic modules are formed from 951 Green Tape™.
Claim 150
Dependent Claim 17 words
The MEMS device of claim 125 , wherein the ceramic modules are formed from 943 Green Tape™.
Claim 151
Dependent Claim 17 words
The MEMS device of claim 125 , wherein the ceramic modules are formed from 951 Green Tape™.
Claim 152
Dependent Claim 17 words
The MEMS device of claim 129 , wherein the ceramic modules are formed from 943 Green Tape™.
Claim 153
Dependent Claim 17 words
The MEMS device of claim 129 , wherein the ceramic modules are formed from 951 Green Tape™.

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