Patent US6807662B2 successfully refreshed from Google Patents.
US6807662B2
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Performance of integrated circuit components via a multiple exposure technique
Assignee: STMicroelectronics SA
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Filing: 2002-07-09
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Granted: 2004-10-19
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Expires: 2022-07-09
Abstract
Abstract An initial layout of an integrated circuit device is separated into a set of definitions for use in a multiple exposure fabrication process. The separation begins with reading a portion of the initial layout and identifying one or more target features within the initial layout. Further, a first revised layout definition is created for a first mask and a second revised layout definition is created for a second mask. The first revised layout definition includes the target features inside the dark-field content. In addition, in one embodiment, the first revised layout definition includes clear areas around each target feature. The second layout definition includes one or more dark features inside the bright-field content. These dark features, when used in the multiple exposure fabrication process, will overlap the target features. The first and second masks may be binary masks, attenuated phase-shifting masks (PSMs) or a combination of a binary mask and an attenuated PSM.
Inventors
- 👤 Olivier Toublan
- 👤 Serdar Manakli
- 👤 Yorick Trouiller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:07
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/203; G03F1/00; G03F1/36; G03F1/68; G03F1/70; G03F1/26; G03F1/32
Claims Analysis
Total Claims: 77
Claim 1
Independent Claim
125 words
A method for separating an initial layout of an integrated circuit device into a set of layout definitions for use in a multiple exposure fabrication process, the method comprising: reading at least a portion of the initial layout; identifying one or more target features within the initial layout; creating a first revised layout definition for a first mask, the first revised layout definition including the one or more target features and adjacent clear areas inside dark-field content; and creating a second revised layout definition for a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in the multiple exposure fabrication process, will overlap the one or more target features.
Claim 2
Independent Claim
125 words
A method for separating an initial layout of an integrated circuit device into a set of layout definitions for use in a multiple exposure fabrication process, the method comprising: reading at least a portion of the initial layout; identifying one or more target features within the initial layout; creating a first revised layout definition for a first mask, the first revised layout definition including the one or more target features and adjacent clear areas inside dark-field content; and creating a second revised layout definition for a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in the multiple exposure fabrication process, will overlap the one or more target features.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein each of the first mask and the second mask is any one of a binary mask and an attenuated phase-shifting mask.
Claim 4
Dependent Claim
32 words
The method of claim 1 wherein the second revised layout definition further includes features from the initial layout that are not present in the first revised layout definition inside the bright-field content.
Claim 5
Dependent Claim
41 words
The method of claim 1 wherein each of the one or more dark features of the second revised layout definition covers each of the one or more target features of the first revised layout definition and the corresponding adjacent clear areas.
Claim 6
Dependent Claim
23 words
The method of claim 4 wherein the one or more target features represent two target features positioned at a distance from each other.
Claim 7
Dependent Claim
18 words
The method of claim 5 wherein the distance is below a first limit associated with an isolated pattern.
Claim 8
Dependent Claim
53 words
The method of claim 6 wherein the dark feature of the second revised layout definition covers an area beginning with a leftmost clear area adjacent to a first target feature of the two target features and ending with the rightmost clear area adjacent to a second target feature of the two target features.
Claim 9
Dependent Claim
27 words
The method of claim 6 wherein the distance is between the first limit associated with the isolated pattern and a second limit associated with a dense pattern.
Claim 10
Dependent Claim
24 words
The method of claim 8 further comprising: adding one or more assist features between the two target features in the first revised layout definition.
Claim 11
Dependent Claim
48 words
The method of claim 9 further comprising: adding a clear area corresponding to any of the one or more assist features within the dark feature of the second revised layout definition when the width of the any of the one or more assist features exceeds a predefined threshold.
Claim 12
Dependent Claim
21 words
The method of claim 1 wherein each of the one or more target features corresponds to a gate of a transistor.
Claim 13
Dependent Claim
38 words
The method of claim 11 wherein creating the adjacent clear areas comprises: creating a clear area on every side of each of the target features, the length of the clear area depending on the length of the gate.
Claim 14
Dependent Claim
17 words
The method of claim 12 wherein the width of the clear area is specified by a user.
Claim 15
Dependent Claim
109 words
A set of masks with definitions created by reading at least a portion of an initial layout of an integrated device layer, identifying one or more target features within the initial layout, creating a first revised layout definition for a first mask, the first revised layout definition including the one or more target features and adjacent clear areas inside dark-field content, and creating a second revised layout definition for a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in a multiple exposure fabrication process, will overlap the one or more target features.
Claim 16
Dependent Claim
109 words
A set of masks with definitions created by reading at least a portion of an initial layout of an integrated device layer, identifying one or more target features within the initial layout, creating a first revised layout definition for a first mask, the first revised layout definition including the one or more target features and adjacent clear areas inside dark-field content, and creating a second revised layout definition for a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in a multiple exposure fabrication process, will overlap the one or more target features.
Claim 17
Dependent Claim
29 words
The set of masks of claim 14 wherein each of the first mask and the second mask is any one of a binary mask and an attenuated phase-shifting mask.
Claim 18
Dependent Claim
43 words
The set of masks of claim 14 wherein each of the one or more dark features of the second revised layout definition covers each of the one or more target features of the first revised layout definition and the corresponding adjacent clear areas.
Claim 19
Dependent Claim
25 words
The set of masks of claim 16 wherein the one or more target features represent two target features positioned at a distance from each other.
Claim 20
Dependent Claim
20 words
The set of masks of claim 17 wherein the distance is below a first limit associated with an isolated pattern.
Claim 21
Dependent Claim
55 words
The set of masks of claim 18 wherein the dark feature of the second revised layout definition covers an area beginning with a leftmost clear area adjacent to a first target feature of the two target features and ending with the rightmost clear area adjacent to a second target feature of the two target features.
Claim 22
Dependent Claim
29 words
The set of masks of claim 18 wherein the distance is between the first limit associated with the isolated pattern and a second limit associated with a dense pattern.
Claim 23
Dependent Claim
31 words
The set of masks of claim 20 wherein the definitions are created further by adding one or more assist features between the two target features in the first revised layout definition.
Claim 24
Dependent Claim
55 words
The set of masks of claim 21 wherein the definitions are created further by adding a clear area corresponding to any of the one or more assist features within the dark feature of the second revised layout definition when the width of the any of the one or more assist features exceeds a predefined threshold.
Claim 25
Dependent Claim
23 words
The set of masks of claim 14 wherein each of the one or more target features corresponds to a gate of a transistor.
Claim 26
Dependent Claim
102 words
An integrated device layer, created by exposing a photoresist applied on a wafer to a first mask created by a first layout definition and thereafter to a second mask created by a second layout definition, and processing the photoresist, wherein: the first layout definition comprises one or more target features from an initial layout of the integrated device layer and adjacent clear areas inside dark-field content; and the second layout definition comprises one or more dark features inside bright-field content, the one or more dark features overlapping the one or more target features when being used in a multiple exposure fabrication process.
Claim 27
Dependent Claim
102 words
An integrated device layer, created by exposing a photoresist applied on a wafer to a first mask created by a first layout definition and thereafter to a second mask created by a second layout definition, and processing the photoresist, wherein: the first layout definition comprises one or more target features from an initial layout of the integrated device layer and adjacent clear areas inside dark-field content; and the second layout definition comprises one or more dark features inside bright-field content, the one or more dark features overlapping the one or more target features when being used in a multiple exposure fabrication process.
Claim 28
Dependent Claim
29 words
The integrated device layer of claim 24 wherein each of the first mask and the second mask is any one of a binary mask and an attenuated phase-shifting mask.
Claim 29
Dependent Claim
41 words
The integrated device layer of claim 24 wherein each of the one or more dark features of the second layout definition covers each of the one or more target features of the first layout definition and the corresponding adjacent clear areas.
Claim 30
Dependent Claim
25 words
The integrated device layer of claim 26 wherein the one or more target features represent two target features positioned at a distance from each other.
Claim 31
Dependent Claim
20 words
The integrated device layer of claim 27 wherein the distance is below a first limit associated with an isolated pattern.
Claim 32
Dependent Claim
54 words
The integrated device layer of claim 28 wherein the dark feature of the second layout definition covers an area beginning with a leftmost clear area adjacent to a first target feature of the two target features and ending with the rightmost clear area adjacent to a second target feature of the two target features.
Claim 33
Dependent Claim
29 words
The integrated device layer of claim 28 wherein the distance is between the first limit associated with the isolated pattern and a second limit associated with a dense pattern.
Claim 34
Dependent Claim
24 words
The integrated device layer of claim 30 wherein the first layout definition further includes one or more assist features between the two target features.
Claim 35
Dependent Claim
52 words
The integrated device layer of claim 31 the second layout definition further includes a clear area corresponding to any of the one or more assist features within the dark feature of the second layout definition if the width of the any of the one or more assist features exceeds a predefined threshold.
Claim 36
Dependent Claim
23 words
The integrated device layer of claim 24 wherein each of the one or more target features corresponds to a gate of a transistor.
Claim 37
Dependent Claim
126 words
A computer readable medium comprising executable instructions which when executed on a processing system cause said processing system to perform a method comprising: reading at least a portion of an initial layout of an integrated device layer; identifying one or more target features within the initial layout; creating a first revised layout definition associated with a first mask, the first revised layout definition including the one or more target features and adjacent clear areas inside dark-field content; and creating a second revised layout definition associated with a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in the multiple exposure fabrication process, will overlap the one or more target features.
Claim 38
Dependent Claim
126 words
A computer readable medium comprising executable instructions which when executed on a processing system cause said processing system to perform a method comprising: reading at least a portion of an initial layout of an integrated device layer; identifying one or more target features within the initial layout; creating a first revised layout definition associated with a first mask, the first revised layout definition including the one or more target features and adjacent clear areas inside dark-field content; and creating a second revised layout definition associated with a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in the multiple exposure fabrication process, will overlap the one or more target features.
Claim 39
Independent Claim
154 words
A method for separating an initial layout of an integrated circuit device into a set of layout definitions for use in a multiple exposure fabrication process, the method comprising: reading at least a portion of the initial layout; identifying two or more target features within the initial layout that are positioned at a distance from each other that is below a limit associated with an isolated pattern; creating a first revised layout definition for a first mask, the first revised layout definition including the two or more target features surrounded by clear areas inside dark-field content; and creating a second revised layout definition for a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in the multiple exposure fabrication process, will overlap the two or more target features and at least a portion of the corresponding clear areas.
Claim 40
Independent Claim
154 words
A method for separating an initial layout of an integrated circuit device into a set of layout definitions for use in a multiple exposure fabrication process, the method comprising: reading at least a portion of the initial layout; identifying two or more target features within the initial layout that are positioned at a distance from each other that is below a limit associated with an isolated pattern; creating a first revised layout definition for a first mask, the first revised layout definition including the two or more target features surrounded by clear areas inside dark-field content; and creating a second revised layout definition for a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in the multiple exposure fabrication process, will overlap the two or more target features and at least a portion of the corresponding clear areas.
Claim 41
Dependent Claim
27 words
The method of claim 35 wherein each of the first mask and the second mask is any one of a binary mask and an attenuated phase-shifting mask.
Claim 42
Dependent Claim
32 words
The method of claim 35 wherein the second revised layout definition further includes features from the initial layout that are not present in the first revised layout definition inside the bright-field content.
Claim 43
Dependent Claim
21 words
The method of claim 35 wherein each of the one or more target features corresponds to a gate of a transistor.
Claim 44
Dependent Claim
38 words
The method of claim 38 wherein creating the surrounding clear areas comprises: creating a clear area on every side of each of the target features, the length of the clear area depending on the length of the gate.
Claim 45
Dependent Claim
17 words
The method of claim 39 wherein the width of the clear area is specified by a user.
Claim 46
Dependent Claim
53 words
The method of claim 35 wherein the dark feature of the second revised layout definition covers an area beginning with a leftmost clear area adjacent to a first target feature of the two target features and ending with the rightmost clear area adjacent to a second target feature of the two target features.
Claim 47
Dependent Claim
27 words
The method of claim 35 wherein the distance is between the first limit associated with the isolated pattern and a second limit associated with a dense pattern.
Claim 48
Dependent Claim
24 words
The method of claim 42 further comprising: adding one or more assist features between the two target features in the first revised layout definition.
Claim 49
Dependent Claim
48 words
The method of claim 43 further comprising: adding a clear area corresponding to any of the one or more assist features within the dark feature of the second revised layout definition when the width of the any of the one or more assist features exceeds a predefined threshold.
Claim 50
Dependent Claim
138 words
A set of masks with definitions created by reading at least a portion of an initial layout of an integrated device layer, identifying two or more target features within the initial layout that are positioned at a distance from each other that is below a limit associated with an isolated pattern, creating a first revised layout definition for a first mask, the first revised layout definition including the two or more target features surrounded by clear areas inside dark-field content, and creating a second revised layout definition for a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in a multiple exposure fabrication process, will overlap the two or more target features and at least a portion of the corresponding clear areas.
Claim 51
Dependent Claim
138 words
A set of masks with definitions created by reading at least a portion of an initial layout of an integrated device layer, identifying two or more target features within the initial layout that are positioned at a distance from each other that is below a limit associated with an isolated pattern, creating a first revised layout definition for a first mask, the first revised layout definition including the two or more target features surrounded by clear areas inside dark-field content, and creating a second revised layout definition for a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in a multiple exposure fabrication process, will overlap the two or more target features and at least a portion of the corresponding clear areas.
Claim 52
Dependent Claim
29 words
The set of masks of claim 45 wherein each of the first mask and the second mask is any one of a binary mask and an attenuated phase-shifting mask.
Claim 53
Dependent Claim
46 words
The set of masks of claim 45 wherein each of the one or more dark features of the second revised layout definition covers each of the one or more target features of the first revised layout definition and at least a portion of corresponding clear areas.
Claim 54
Dependent Claim
23 words
The set of masks of claim 45 wherein each of the one or more target features corresponds to a gate of a transistor.
Claim 55
Dependent Claim
55 words
The set of masks of claim 45 wherein the dark feature of the second revised layout definition covers an area beginning with a leftmost clear area adjacent to a first target feature of the two target features and ending with the rightmost clear area adjacent to a second target feature of the two target features.
Claim 56
Dependent Claim
29 words
The set of masks of claim 45 wherein the distance is between the first limit associated with the isolated pattern and a second limit associated with a dense pattern.
Claim 57
Dependent Claim
31 words
The set of masks of claim 45 wherein the definitions are created further by adding one or more assist features between the two target features in the first revised layout definition.
Claim 58
Dependent Claim
55 words
The set of masks of claim 51 wherein the definitions are created further by adding a clear area corresponding to any of the one or more assist features within the dark feature of the second revised layout definition when the width of the any of the one or more assist features exceeds a predefined threshold.
Claim 59
Dependent Claim
130 words
An integrated device layer, created by exposing a photoresist applied on a wafer to a first mask created by a first layout definition and thereafter to a second mask created by a second layout definition, and processing the photoresist, wherein: the first layout definition comprises two or more target features from an initial layout of the integrated device layer that are separated by a distance that is less than a limit associated with isolated patterns and are surrounded by clear areas inside dark-field content; and the second layout definition comprises one or more dark features inside bright-field content, the one or more dark features overlapping the two or more target features and at least a portion of the corresponding clear areas when being used in a multiple exposure fabrication process.
Claim 60
Dependent Claim
130 words
An integrated device layer, created by exposing a photoresist applied on a wafer to a first mask created by a first layout definition and thereafter to a second mask created by a second layout definition, and processing the photoresist, wherein: the first layout definition comprises two or more target features from an initial layout of the integrated device layer that are separated by a distance that is less than a limit associated with isolated patterns and are surrounded by clear areas inside dark-field content; and the second layout definition comprises one or more dark features inside bright-field content, the one or more dark features overlapping the two or more target features and at least a portion of the corresponding clear areas when being used in a multiple exposure fabrication process.
Claim 61
Dependent Claim
29 words
The integrated device layer of claim 53 wherein each of the first mask and the second mask is any one of a binary mask and an attenuated phase-shifting mask.
Claim 62
Dependent Claim
54 words
The integrated device layer of claim 54 wherein the dark feature of the second layout definition covers an area beginning with a leftmost clear area adjacent to a first target feature of the two target features and ending with the rightmost clear area adjacent to a second target feature of the two target features.
Claim 63
Dependent Claim
29 words
The integrated device layer of claim 54 wherein the distance is between the first limit associated with the isolated pattern and a second limit associated with a dense pattern.
Claim 64
Dependent Claim
24 words
The integrated device layer of claim 54 wherein the first layout definition further includes one or more assist features between the two target features.
Claim 65
Dependent Claim
52 words
The integrated device layer of claim 54 the second layout definition further includes a clear area corresponding to any of the one or more assist features within the dark feature of the second layout definition if the width of the any of the one or more assist features exceeds a predefined threshold.
Claim 66
Dependent Claim
23 words
The integrated device layer of claim 53 wherein each of the one or more target features corresponds to a gate of a transistor.
Claim 67
Dependent Claim
149 words
A computer-readable medium comprising executable instructions which when executed on a processing system cause said processing system to perform a method comprising: reading at least a portion of an initial layout of an integrated device layer; identifying two or more target features within the initial layout separated by a distance that is less than a limit associated with isolated patterns; creating a first revised layout definition associated with a first mask, the first revised layout definition including the one or more target features surrounded by clear areas inside dark-field content; and creating a second revised layout definition associated with a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in the multiple exposure fabrication process, will overlap the two or more target features and at least a portion of the corresponding clear areas.
Claim 68
Dependent Claim
149 words
A computer-readable medium comprising executable instructions which when executed on a processing system cause said processing system to perform a method comprising: reading at least a portion of an initial layout of an integrated device layer; identifying two or more target features within the initial layout separated by a distance that is less than a limit associated with isolated patterns; creating a first revised layout definition associated with a first mask, the first revised layout definition including the one or more target features surrounded by clear areas inside dark-field content; and creating a second revised layout definition associated with a second mask, the second revised layout definition including one or more dark features inside bright-field content, wherein the one or more dark features, when used in the multiple exposure fabrication process, will overlap the two or more target features and at least a portion of the corresponding clear areas.
Claim 69
Dependent Claim
112 words
A computer-readable medium on which data is stored for defining a first and second mask for creating at least one target feature defined in an initial layout of an integrated circuit device with a multiple exposure fabrication, the medium including: data representing a first mask including a dark feature and clear areas adjoining the dark feature within a dark-field that correspond to the target feature in the initial layout; and data representing a second mask including a feature within a bright-field, wherein the feature of the second mask covers the dark feature and at least a portion of the clear areas adjoining the dark feature when used in a multiple exposure process.
Claim 70
Dependent Claim
112 words
A computer-readable medium on which data is stored for defining a first and second mask for creating at least one target feature defined in an initial layout of an integrated circuit device with a multiple exposure fabrication, the medium including: data representing a first mask including a dark feature and clear areas adjoining the dark feature within a dark-field that correspond to the target feature in the initial layout; and data representing a second mask including a feature within a bright-field, wherein the feature of the second mask covers the dark feature and at least a portion of the clear areas adjoining the dark feature when used in a multiple exposure process.
Claim 71
Dependent Claim
80 words
The computer-readable medium of claim 61 , wherein the data representing the first mask further includes data representing a second dark feature and clear areas adjoining the second dark feature that corresponds to a second target feature that is within a predetermined distance of the first target feature, wherein the feature in the second mask covers both dark features and at least a portion of the adjoining clear areas in the first mask when used in a multiple exposure process.
Claim 72
Dependent Claim
41 words
The computer-readable medium of claim 62 , wherein the data for the first mask further includes data representing one or more assist features that are between the first and second dark features that correspond to the first and second target features.
Claim 73
Dependent Claim
30 words
The computer-readable medium of claim 63 , wherein the feature in the second mask includes a bright-field opening aligned with the one or more assist features on the first mask.
Claim 74
Independent Claim
173 words
A method for separating an initial layout of an integrated circuit device into a set of layout definitions for use in a multiple exposure fabrication process, comprising: reading at least a portion of the initial layout; identifying one or more target features within the initial layout that require fabrication with a multiple exposure fabrication process; creating a first revised layout definition for a first mask; the first revised layout definition including dark features with adjacent clear areas inside a dark-field that correspond to each of the target features requiring fabrication with a multiple exposure process; and creating a second revised layout definition for a second mask, the second revised layout definition including dark features in a bright-field that overlap the dark features and at least a portion of the adjacent clear areas that correspond to the target features in the first mask when used in a multiple exposure fabrication process and dark features in a bright-field that correspond to features from the initial layout that do not require a multiple exposure fabrication process.
Claim 75
Independent Claim
173 words
A method for separating an initial layout of an integrated circuit device into a set of layout definitions for use in a multiple exposure fabrication process, comprising: reading at least a portion of the initial layout; identifying one or more target features within the initial layout that require fabrication with a multiple exposure fabrication process; creating a first revised layout definition for a first mask; the first revised layout definition including dark features with adjacent clear areas inside a dark-field that correspond to each of the target features requiring fabrication with a multiple exposure process; and creating a second revised layout definition for a second mask, the second revised layout definition including dark features in a bright-field that overlap the dark features and at least a portion of the adjacent clear areas that correspond to the target features in the first mask when used in a multiple exposure fabrication process and dark features in a bright-field that correspond to features from the initial layout that do not require a multiple exposure fabrication process.
Claim 76
Dependent Claim
117 words
A computer-readable medium of which data is stored for creating a first and second mask to create a layout of an integrated circuit device with a multiple exposure process, the medium containing: data representing dark features and adjacent clear areas within a dark-field that correspond to target features within the layout requiring fabrication with a multiple exposure process; and data representing dark features within a clear field that overlap the dark features and at least a portion of the adjacent clear areas corresponding to the target features and data representing dark features within the clear field that correspond to features in the layout of the integrated circuit that do not require fabrication with a multiple exposure process.
Claim 77
Dependent Claim
117 words
A computer-readable medium of which data is stored for creating a first and second mask to create a layout of an integrated circuit device with a multiple exposure process, the medium containing: data representing dark features and adjacent clear areas within a dark-field that correspond to target features within the layout requiring fabrication with a multiple exposure process; and data representing dark features within a clear field that overlap the dark features and at least a portion of the adjacent clear areas corresponding to the target features and data representing dark features within the clear field that correspond to features in the layout of the integrated circuit that do not require fabrication with a multiple exposure process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-10-19 | 2008-04-19 | 2008-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-10-19 | 2012-04-19 | 2012-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-10-19 | 2016-04-19 | 2016-10-19 | $7700.00 | Window Closed / Lapsed |