Semiconductor memory with a clock synchronization device having a temperature controlled delay circuit

Claim 2

A synchronization device for a semiconductor memory device, comprising: a temperature-controllable delay device for assisting in time modulating an input clock signal, said temperature-controllable delay device for one of receiving and generating the input clock signal, said temperature-controllable delay device further generating a signal delay dependent on an operating temperature of the semiconductor memory device, said temperature-controllable delay device outputting an output clock signal based on the input clock signal with a delay equal to the signal delay.

Claim 3

The synchronization device according to claim 1 , wherein the signal delay can be generated satisfying a relationship: C out( t )= C in( t−Δt (θ)) for the input clock signal and the output clock signal, where Cin is the input clock signal, Cout is the output clock signal being a time-dependent output clock signal, t is time, Δt is the signal delay, and θ is the operating temperature.

Claim 4

The synchronization device according to claim 1 , wherein the signal delay dependent on the operating temperature is generated such that the output clock signal or a time characteristic of the output clock signal is substantially independent of the operating temperature of the semiconductor memory device.

Claim 5

The synchronization device according to claim 1 , wherein said temperature-controllable delay device generates a first signal delay Δt(θ 1 ) and a second signal delay Δt(θ 2 ) for each first operating temperature θ 1 and for each second operating temperature θ 2 of the semiconductor memory device, respectively, such that a relationship C out 1 ( t )= C out 2 ( t ) is satisfied by output clock signals Cout 1 and Cout 2 for all times t, provided that C in 1 ( t )= C in 2 ( t ) is satisfied by respective input clock signals Cin 1 and Cin 2 for all the times t.

Claim 6

The synchronization device according to claim 1 , wherein said temperature-controllable delay device generates a relatively shorter signal delay given a relatively higher operating temperature of the semiconductor memory device, and generates a relatively longer signal delay given a relatively lower operating temperature of the semiconductor memory device.

Claim 7

The synchronization device according to claim 1 , wherein said temperature-controllable delay device uses a temperature signal representing the operating temperature of the semiconductor memory device for a temperature-dependent controlling of the signal delay.

Claim 8

The synchronization device according to claim 6 , further comprising a control line over which the temperature signal is supplied.

Claim 9

The synchronization device according to claim 7 , further comprising a temperature sensor generating the temperature signal and connected to said control line.

Claim 10

The synchronization device according to claim 1 , further comprising a delay line with an input terminal, an output terminal, and a control terminal, said temperature-controllable delay device has an input terminal and an output terminal disposed in said output terminal of said delay line.

Claim 11

The synchronization device according to claim 9 , further comprising: a feedback device connected to said temperature-controllable delay device and having an input terminal and an output terminal; and a phase detector connected to said feedback device and having first and second input terminals and an output terminal.

Claim 12

The synchronization device according to claim 10 , wherein said input terminal of said feedback device is connected to said output terminal of said temperature-controllable delay device in said output terminal of said delay line, said output terminal of said feedback device is connected to said first input terminal of said phase detector.

Claim 13

The synchronization device according to claim 10 , wherein: said second input terminal of said phase detector is connected to said input terminal of said delay line; and said output terminal of said phase detector is connected to said control terminal of said delay line.

Claim 14

The synchronization device according to claim 1 , wherein said temperature-controllable delay device has two tri-state inverters that are connected in series.

Claim 15

The synchronization device according to claim 6 , wherein the temperature signal is a control voltage.

Claim 16

The synchronization device according to claim 1 , wherein the semiconductor memory device is selected from the group consisting of a high-frequency semiconductor memory device and a DDR-RAM memory module.

Claim 17

A semiconductor memory device, comprising: a synchronization device for time-modulating a clock signal, said synchronization device including: a temperature-controllable delay device for assisting in time modulating an input clock signal, said temperature-controllable delay device for one of receiving and generating the input clock signal, said temperature-controllable delay device further generating a signal delay dependent on an operating temperature of the semiconductor memory device, said temperature-controllable delay device outputting an output clock signal based on the input clock signal with a delay equal to the signal delay.

Claim 18

A semiconductor memory device, comprising: a synchronization device for time-modulating a clock signal, said synchronization device including: a temperature-controllable delay device for assisting in time modulating an input clock signal, said temperature-controllable delay device for one of receiving and generating the input clock signal, said temperature-controllable delay device further generating a signal delay dependent on an operating temperature of the semiconductor memory device, said temperature-controllable delay device outputting an output clock signal based on the input clock signal with a delay equal to the signal delay.