US6753618B2
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MIM capacitor with metal nitride electrode materials and method of formation
Assignee: Round Rock Research LLC
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Filing: 2002-03-11
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Granted: 2004-06-22
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Expires: 2022-03-11
Abstract
Abstract An MIM capacitor with low leakage and high capacitance is disclosed. A layer of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) material is formed as a lower electrode over an optional capacitance layer of hemispherical grained polysilicon (HSG). Prior to the dielectric formation, the first layer may be optionally subjected to a nitridization or oxidation process. A dielectric layer of, for example, aluminum oxide (Al 2 O 3 ) formed by atomic layer deposition (ALD) is fabricated over the first layer and after the optional nitridization or oxidation process. An upper electrode of titanium nitride (TiN) or boron-doped titanium nitride (TiBN) is formed over the dielectric layer.
Inventors
- 👤 Cem Basceri
- 👤 Thomas M. Graettinger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:16
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/696; H10D1/716; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69392; H10P14/69393; H10P14/69397
Claims Analysis
Total Claims: 56
Claim 1
Independent Claim
81 words
An MIM capacitor comprising: a conductive support layer formed over a semiconductor substrates said conductive support layer being formed of a material selected from the group consisting of hemispherical grained polysilicon, silica, germanium and silicon; a lower electrode formed over and in contact with said conductive support layer; a dielectric layer formed over said lower electrode; and an upper electrode formed over said dielectric layer, wherein each of said lower and upper electrode comprises titanium nitride or boron-doped titanium nitride material.
Claim 2
Dependent Claim
81 words
An MIM capacitor comprising: a conductive support layer formed over a semiconductor substrates said conductive support layer being formed of a material selected from the group consisting of hemispherical grained polysilicon, silica, germanium and silicon; a lower electrode formed over and in contact with said conductive support layer; a dielectric layer formed over said lower electrode; and an upper electrode formed over said dielectric layer, wherein each of said lower and upper electrode comprises titanium nitride or boron-doped titanium nitride material.
Claim 3
Dependent Claim
33 words
The MIM capacitor of claim 1 , wherein said dielectric layer comprises a material selected from the group consisting of aluminum oxide, tantalum oxide, zirconium oxide, hafnium oxide, hafnium-aluminum-oxygen alloys and lanthanum-aluminum-oxygen alloys.
Claim 4
Dependent Claim
17 words
The MIM capacitor of claim 1 , wherein said dielectric layer is a tantalum oxide dielectric layer.
Claim 5
Dependent Claim
17 words
The MIM capacitor of claim 1 , wherein said dielectric layer is a hafnium oxide dielectric layer.
Claim 6
Dependent Claim
17 words
The MIM capacitor of claim 1 , wherein said dielectric layer is a hafnium-aluminum-oxygen alloy dielectric layer.
Claim 7
Dependent Claim
17 words
The MIM capacitor of claim 1 , wherein said dielectric layer is a lanthanum-aluminum-oxygen alloy dielectric layer.
Claim 8
Dependent Claim
17 words
The MIM capacitor of claim 1 , wherein said dielectric layer is an aluminum oxide dielectric layer.
Claim 9
Dependent Claim
17 words
The MIM capacitor of claim 7 , wherein said dielectric layer is an ALD aluminum oxide layer.
Claim 10
Dependent Claim
24 words
The MIM capacitor of claim 8 , wherein said ALD aluminum oxide layer has a thickness of about 10 Angstroms to about 100 Angstroms.
Claim 11
Dependent Claim
23 words
The MIM capacitor of claim 1 , wherein at least one of said lower and upper electrodes is an ALD titanium nitride layer.
Claim 12
Dependent Claim
20 words
The MIM capacitor of claim 10 , wherein said ALD titanium nitride layer is a nitridized ALD titanium nitride layer.
Claim 13
Dependent Claim
22 words
The MIM capacitor of claim 1 , wherein each one of said lower and upper electrodes is an ALD titanium nitride layer.
Claim 14
Dependent Claim
20 words
The MIM capacitor of claim 12 , wherein said ALD titanium nitride layer is a nitridized ALD titanium nitride layer.
Claim 15
Dependent Claim
23 words
The MIM capacitor of claim 1 , wherein at least one of said lower and upper electrodes is a boron-doped titanium nitride layer.
Claim 16
Dependent Claim
20 words
The MIM capacitor of claim 14 , wherein said boron-doped titanium nitride layer is a nitridized boron-doped titanium nitride layer.
Claim 17
Dependent Claim
22 words
The MIM capacitor of claim 1 , wherein each one of said lower and upper electrodes is a boron-doped titanium nitride layer.
Claim 18
Dependent Claim
20 words
The MIM capacitor of claim 16 , wherein said boron-doped titanium nitride layer is a nitridized boron-doped titanium nitride layer.
Claim 19
Dependent Claim
23 words
The MIM capacitor of claim 16 , wherein said boron-doped titanium nitride layer has a boron concentration of about 0.01% to about 30%.
Claim 20
Dependent Claim
18 words
The MIM capacitor of claim 1 , wherein said conductive support layer is formed of hemispherical grained polysilicon.
Claim 21
Dependent Claim
25 words
The MIM capacitor of claim 19 , wherein said conductive support layer is formed of etched hemispherical grained polysilicon with activated hemispherical grained polysilicon grains.
Claim 22
Dependent Claim
20 words
The MIM capacitor of claim 20 , wherein said etched hemispherical grained polysilicon is a nitridized etched hemispherical grained polysilicon.
Claim 23
Dependent Claim
19 words
The MIM capacitor of claim 20 , wherein said etched hemispherical grained polysilicon is an annealed hemispherical grained polysilicon.
Claim 24
Dependent Claim
108 words
A memory device comprising: a substrate; a memory cell formed over said substrate, said memory cell comprising a transistor including a gate fabricated on said substrate, and source and drain regions in said substrate disposed adjacent to said gate; and a charge storage capacitor electrically connected to one of said source and drain regions, said capacitor comprising a first metal nitride layer formed over a polysilicon plug, a dielectric layer formed over said first metal nitride layer and a second metal nitride layer formed over said dielectric layer, wherein at least one of said first metal nitride layer and said second metal nitride layer comprises boron-doped titanium nitride.
Claim 25
Dependent Claim
108 words
A memory device comprising: a substrate; a memory cell formed over said substrate, said memory cell comprising a transistor including a gate fabricated on said substrate, and source and drain regions in said substrate disposed adjacent to said gate; and a charge storage capacitor electrically connected to one of said source and drain regions, said capacitor comprising a first metal nitride layer formed over a polysilicon plug, a dielectric layer formed over said first metal nitride layer and a second metal nitride layer formed over said dielectric layer, wherein at least one of said first metal nitride layer and said second metal nitride layer comprises boron-doped titanium nitride.
Claim 26
Dependent Claim
40 words
The memory device of claim 23 , wherein one of said first and second metal nitride layers is a titanium nitride layer and the other of said first and second metal nitride layers is a boron doped titanium nitride layer.
Claim 27
Dependent Claim
29 words
The memory device of claim 23 , wherein said first metal nitride layer is a titanium nitride layer and said second metal layer is a boron-doped titanium nitride layer.
Claim 28
Dependent Claim
29 words
The memory device of claim 23 , wherein said first metal nitride layer is a titanium nitride layer and said second metal layer is a boron-doped titanium nitride layer.
Claim 29
Dependent Claim
23 words
The memory device of claim 23 , wherein each of said first and second metal nitride layers is a boron-doped titanium nitride layer.
Claim 30
Dependent Claim
33 words
The memory device of claim 23 , wherein said dielectric layer comprises a material selected from the group consisting of aluminum oxide, tantalum oxide, zirconium oxide, hafnium oxide, hafnium-aluminum-oxygen alloys and lanthanum-aluminum-oxygen alloys.
Claim 31
Dependent Claim
16 words
The memory device of claim 28 , wherein said dielectric layer is a tantalum oxide layer.
Claim 32
Dependent Claim
16 words
The memory device of claim 28 , wherein said dielectric layer is a zirconium oxide layer.
Claim 33
Dependent Claim
16 words
The memory device of claim 28 , wherein said dielectric layer is a hafnium oxide layer.
Claim 34
Dependent Claim
16 words
The memory device of claim 28 , wherein said dielectric layer is a hafnium-aluminum-oxygen alloy layer.
Claim 35
Dependent Claim
16 words
The memory device of claim 28 , wherein said dielectric layer is a lanthanum-aluminum-oxygen alloy layer.
Claim 36
Dependent Claim
17 words
The memory device of claim 28 , wherein said dielectric layer is an aluminum oxide dielectric layer.
Claim 37
Dependent Claim
18 words
The memory device of claim 28 , wherein said dielectric layer is an ALD aluminum oxide dielectric layer.
Claim 38
Dependent Claim
18 words
The memory device of claim 23 further comprising a conductive support layer adjacent said first metal nitride layer.
Claim 39
Dependent Claim
18 words
The memory device of claim 36 , wherein said conductive support layer is a hemispherical grained polysilicon layer.
Claim 40
Dependent Claim
19 words
The memory device of claim 37 , wherein said conductive support layer is a nitridized hemispherical grained polysilicon layer.
Claim 41
Dependent Claim
16 words
The memory device of claim 23 , wherein said memory cell is a DRAM memory cell.
Claim 42
Dependent Claim
16 words
The memory device of claim 23 , wherein said memory cell is a SRAM memory cell.
Claim 43
Dependent Claim
87 words
A processor-based system comprising: a processor; and an integrated circuit coupled to said processor, at least one of said integrated circuit and processor containing a capacitor, said capacitor comprising a lower capacitor electrode comprising one of oxidized titanium nitride material, nitridized titanium nitride material, oxidized boron-doped titanium nitride material and nitridized boron-doped titanium nitride material; an aluminum oxide dielectric layer formed over said lower capacitor electrode; and an upper capacitor electrode formed over said aluminum oxide dielectric layer, said upper capacitor electrode comprising a metal nitride material.
Claim 44
Dependent Claim
87 words
A processor-based system comprising: a processor; and an integrated circuit coupled to said processor, at least one of said integrated circuit and processor containing a capacitor, said capacitor comprising a lower capacitor electrode comprising one of oxidized titanium nitride material, nitridized titanium nitride material, oxidized boron-doped titanium nitride material and nitridized boron-doped titanium nitride material; an aluminum oxide dielectric layer formed over said lower capacitor electrode; and an upper capacitor electrode formed over said aluminum oxide dielectric layer, said upper capacitor electrode comprising a metal nitride material.
Claim 45
Dependent Claim
18 words
The processor-based system of claim 41 further comprising a hemispherical grained polysilicon layer adjacent said lower capacitor electrode.
Claim 46
Dependent Claim
20 words
The processor-based system of claim 41 , wherein said hemispherical grained polysilicon layer is a nitridized hemispherical grained polysilicon layer.
Claim 47
Dependent Claim
15 words
The processor-based system of claim 41 , wherein said integrated circuit is a memory device.
Claim 48
Dependent Claim
16 words
The processor-based system of claim 44 , wherein said memory device is a DRAM memory device.
Claim 49
Dependent Claim
16 words
The processor-based system of claim 44 , wherein said memory device is a SRAM memory device.
Claim 50
Dependent Claim
69 words
A capacitor comprising: a lower electrode formed over a semiconductor substrate; a dielectric layer formed over said lower electrode, said dielectric layer comprising a material selected from the group consisting of aluminum oxide, tantalum oxide, zirconium oxide, hafnium oxide, hafnium-aluminum-oxygen alloys and lanthanum-aluminum-Oxygen alloys; and an upper electrode formed over said dielectric layer, wherein at least one of said lower and upper electrodes comprises boron doped titanium nitride material.
Claim 51
Dependent Claim
69 words
A capacitor comprising: a lower electrode formed over a semiconductor substrate; a dielectric layer formed over said lower electrode, said dielectric layer comprising a material selected from the group consisting of aluminum oxide, tantalum oxide, zirconium oxide, hafnium oxide, hafnium-aluminum-oxygen alloys and lanthanum-aluminum-Oxygen alloys; and an upper electrode formed over said dielectric layer, wherein at least one of said lower and upper electrodes comprises boron doped titanium nitride material.
Claim 52
Dependent Claim
22 words
The capacitor of claim 47 , wherein at least one of said lower and upper electrodes is an ALD titanium nitride layer.
Claim 53
Dependent Claim
19 words
The capacitor of claim 48 , wherein said ALD titanium nitride layer is a nitridized ALD titanium nitride layer.
Claim 54
Dependent Claim
19 words
The capacitor of claim 47 , wherein said boron-doped titanium nitride layer is a nitridized boron-doped titanium nitride layer.
Claim 55
Dependent Claim
16 words
The capacitor of claim 47 , further comprising a conductive support layer adjacent said lower electrode.
Claim 56
Dependent Claim
29 words
The capacitor of claim 51 , wherein said conductive support layer is formed of a material selected from the group consisting of hemispherical grained polysilicon, silica, germanium and silicon.
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