Patent US6746876B2 successfully refreshed from Google Patents.
US6746876B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor manufacturing method having dielectric formed before electrode
Assignee: Renesas Technology Corp
•
Filing: 2002-12-06
•
Granted: 2004-06-08
•
Expires: 2022-12-06
Abstract
Abstract A method for manufacturing a capacitor is provided which can form a lower electrode having a high aspect ratio without suffering deterioration of the capacitor electric characteristics even when a platinum-group metal is adopted as the material of the lower electrode and a metal oxide having a high dielectric constant is adopted as the material of the dielectric film. Holes ( 8 ) that reach contact plugs ( 2 ) are formed in an insulating film ( 7 ). Then a dielectric film ( 9 ) is formed on the surfaces of the holes ( 8 ). Next the dielectric film ( 9 ) on the bottoms of the holes ( 8 ) are etched away to form holes ( 18 ) reaching the contact plugs ( 2 ). Lower electrodes ( 11 ) are then formed to fill the holes ( 8 ) and ( 18 ).
Inventors
- 👤 Hiromi Itoh
- 👤 Yoshikazu Tsunemine
- 👤 Keiichiro Kashihara
- 👤 Akie Yutani
- 👤 Tomonori Okudaira
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:06
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/682; H10D1/692; H10D1/694; H10D1/711; H10D1/716
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
162 words
A capacitor manufacturing method, comprising the steps of: (a) providing an object to be connected; (b) forming an insulating film on said object to be connected; (c) forming a first hole in said insulating film; (d) forming a first dielectric film on a surface of said first hole, without filling said first hole; (e) forming a part of a lower electrode on said first dielectric film, without filling said first hole; (f) etching a structure obtained by said step (e) from above a surface of said part of said lower electrode that is formed on the bottom of said first hole, so as to form a second hole reaching said object to be connected in said structure obtained by said step (e); (g) forming a remaining part of said lower electrode to fill said first and second holes; (h) removing said insulating film after said step (g); and (i) after said step (h), forming an upper electrode on said first dielectric film.
Claim 2
Dependent Claim
162 words
A capacitor manufacturing method, comprising the steps of: (a) providing an object to be connected; (b) forming an insulating film on said object to be connected; (c) forming a first hole in said insulating film; (d) forming a first dielectric film on a surface of said first hole, without filling said first hole; (e) forming a part of a lower electrode on said first dielectric film, without filling said first hole; (f) etching a structure obtained by said step (e) from above a surface of said part of said lower electrode that is formed on the bottom of said first hole, so as to form a second hole reaching said object to be connected in said structure obtained by said step (e); (g) forming a remaining part of said lower electrode to fill said first and second holes; (h) removing said insulating film after said step (g); and (i) after said step (h), forming an upper electrode on said first dielectric film.
Claim 3
Dependent Claim
182 words
The capacitor manufacturing method according to claim 1 , wherein in said step (c), said first hole is formed to open to a top surface of said insulating film, in said step (e), an electrode material of said part of said lower electrode is formed on a surface of a structure obtained by said step (d), without filling said first hole, and in said step (f), said structure obtained by said step (e) is etched from above a surface of said electrode material of said part of said lower electrode, thereby forming said second hole and also removing said electrode material of said part of said lower electrode that is located above said first hole, and wherein said step (g) comprises the steps of: (g-1) forming an electrode material of said remaining part of said lower electrode on a surface of a structure obtained by said step (f) while filling said first and second holes; and (g-2) after said step (g-1), removing said electrode material of said remaining part of said lower electrode that is located above said first and second holes.
Claim 4
Dependent Claim
36 words
The capacitor manufacturing method according to claim 1 , further comprising the step (j) of, before said step (i), forming a second dielectric film on the entire surface of a structure obtained by said step (h).
Claim 5
Dependent Claim
36 words
The capacitor manufacturing method according to claim 2 , further comprising the step (j) of, before said step (i), forming a second dielectric film on the entire surface of a structure obtained by said step (h).
Claim 6
Dependent Claim
41 words
The capacitor manufacturing method according to claim 1 , wherein said part of said lower electrode formed in said step (e) and said remaining part of said lower electrode formed in said step (g) are made of different materials from each.
Claim 7
Dependent Claim
41 words
The capacitor manufacturing method according to claim 2 , wherein said part of said lower electrode formed in said step (e) and said remaining part of said lower electrode formed in said step (g) are made of different materials from each.
Claim 8
Dependent Claim
41 words
The capacitor manufacturing method according to claim 3 , wherein said part of said lower electrode formed in said step (e) and said remaining part of said lower electrode formed in said step (g) are made of different materials from each.
Claim 9
Dependent Claim
41 words
The capacitor manufacturing method according to claim 4 , wherein said part of said lower electrode formed in said step (e) and said remaining part of said lower electrode formed in said step (g) are made of different materials from each.
Claim 10
Dependent Claim
23 words
The capacitor manufacturing method according to claim 1 , wherein in said step (d), said first dielectric film is formed by CVD method.
Claim 11
Dependent Claim
23 words
The capacitor manufacturing method according to claim 4 , wherein in said step (j), said second dielectric film is formed by PVD method.
Claim 12
Dependent Claim
30 words
The capacitor manufacturing method according to claim 1 , wherein said lower electrode is made of a platinum-group metal and said first dielectric film is made of a metal oxide.
Claim 13
Dependent Claim
56 words
The capacitor manufacturing method according to claim 5 , wherein said part of said lower electrode formed in said step (e) is made of a platinum-group metal, said remaining part of said lower electrode formed in said step (g) is made of a metal nitride, and said first dielectric film is made of a metal oxide.
Claim 14
Dependent Claim
20 words
The capacitor manufacturing method according to claim 11 , wherein said metal oxide is BST or tantalum oxide or PZT.
Claim 15
Dependent Claim
20 words
The capacitor manufacturing method according to claim 12 , wherein said metal oxide is BST or tantalum oxide or PZT.
References Cited (Backward Citations)
US5854107A
Cited
JPH10154801A
Cited
JP2000252441A
Cited
JP2001210803A
Cited
US6384443B1
Cited
US6500763B2
Cited
US6544835B2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-06-08 | 2007-12-08 | 2008-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-06-08 | 2011-12-08 | 2012-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-06-08 | 2015-12-08 | 2016-06-08 | $7700.00 | Window Closed / Lapsed |