Abstract On the surface of a conductive substrate ( 1 ) of GaAs, Ge, Si, etc., a semiconductor lamination section including a light emitting layer forming portion ( 11 ) that has at least an n-type layer ( 4 ) and a p-type layer ( 6 ) made from a compound semiconductor of a Group III element and nitrogen and that is laminated so as to form a light emitting layer is formed through a buffer layer ( 2 ) suitable for the substrate. As a result, a semiconductor light emitting device using a Group III nitride compound semiconductor, which is of a vertical type that allows electrodes to be taken out from both of the upper and lower surfaces of a chip, has superior crystalline properties with high light emitting efficiency, and exhibits cleavage, is obtained. Therefore, it is possible to easily mount a LD chip on a sub-mount having a good thermal conductivity, and consequently to prevent a reduction and degradation in the light emitting efficiency (differential quantum efficiency) due to heat.
A semiconductor light emitting device comprising: an active layer made from a Group III nitride compound semiconductor, and n-type and p-type clad layers, made from a Group III nitride compound semiconductor having band gap energy greater than said active layer, which sandwich said active layer from the respective sides, wherein said active layer is a compound semiconductor layer made of a material represented by a general formula, Tl v Ga 1−v N (0<v<1).
Claim 2
Dependent Claim
73 words
A semiconductor light emitting device comprising: an active layer made from a Group III nitride compound semiconductor, and n-type and p-type clad layers, made from a Group III nitride compound semiconductor having band gap energy greater than said active layer, which sandwich said active layer from the respective sides, wherein said active layer is a compound semiconductor layer made of a material represented by a general formula, Tl v Ga 1−v N (0<v<1).
Claim 3
Dependent Claim
43 words
The semiconductor light emitting device of claim 1 , wherein said active layer has a quantum well structure, and a well layer of said quantum well structure is made of a material represented by a general formula, Tl v Ga 1−v N (0<v<1).