US6274891B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Rohm Co Ltd
•
Filing: 1999-09-09
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Granted: 2001-08-14
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Expires: 2019-09-09
Abstract
Abstract In a semiconductor laser which uses a semiconductor of GaN type compound, an optimism material is used for a current blocking layer, so that it is made possible to obtain a semiconductor laser that satisfies a gain guiding structure of high light emitting efficiency or a refractive index guiding structure or both, thereby facilitating control of the noise of oscillated light (reduction of noise), control of the spread of light in lateral direction, and control of the longitudinal mode.
Inventors
- 👤 Haruo Tanaka
- 👤 Yukio Shakuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:51
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/02; H01S5/026; H01S5/0267; H01S5/04; H01S5/042; H01S5/06; H01S5/065; H01S5/0651; H01S5/0653; H01S5/0654; H01S5/068; H01S5/0683; H01S5/10; H01S5/1053; H01S5/1064; H01S5/1082; H01S5/1085; H01S5/2205; H01S5/2206; H01S5/221; H01S5/2218; H01S5/2219; H01S5/32341
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
157 words
A semiconductor laser comprising: cladding layers stacked on a substrate; and an active layer interposed between said cladding layers, said active layer being made of a material having band gap energy smaller than that of said cladding layers; wherein a stripe-like current injection area is provided so as to form a light emitting portion in said active layer, both end faces of said stripe-like light emitting portion are inclined in the direction whereby a light from said light emitting portion is reflected to advance in the direction of the side of said substrate; wherein a reflection film is provided in two irradiating locations on the reverse side of said substrate so that part of said light is irradiated from said reflection film portion and a remainder of said light is reflected using said reflection film as one wall surface of a resonator; and wherein a semiconductor circuit element is provided on the reverse side of said substrate.
Claim 2
Dependent Claim
157 words
A semiconductor laser comprising: cladding layers stacked on a substrate; and an active layer interposed between said cladding layers, said active layer being made of a material having band gap energy smaller than that of said cladding layers; wherein a stripe-like current injection area is provided so as to form a light emitting portion in said active layer, both end faces of said stripe-like light emitting portion are inclined in the direction whereby a light from said light emitting portion is reflected to advance in the direction of the side of said substrate; wherein a reflection film is provided in two irradiating locations on the reverse side of said substrate so that part of said light is irradiated from said reflection film portion and a remainder of said light is reflected using said reflection film as one wall surface of a resonator; and wherein a semiconductor circuit element is provided on the reverse side of said substrate.
Claim 3
Dependent Claim
15 words
The semiconductor laser according to claim 1 , wherien said semiconductor circuit element contains photodetector.
Claim 4
Dependent Claim
191 words
A semiconductor laser comprising: cladding layers stacked on a substrate; and an active layer interposed between said cladding layers, said active layer being made of a material having band gap energy smaller than that of said cladding layers; wherein a stripe-like current injection area is provided so as to form a light emitting portion in said active layer, both end faces of said stripe-like light emitting portion are inclined in the direction whereby a light from said light emitting portion is reflected to advance in the direction of the side of said substrate; wherein a reflection film is provided in two irradiating locations on the reverse side of said substrate so that part of said light is irradiated from said reflection film portion and a remainder of said light is reflected using said reflection film as one wall surface of a resonator; and wherein a semiconductor layer is provided on the reverse side of said substrate, a reflection film on said irradiating locations is formed by said semiconductor layer and said substrate, and an output window is provided in said semiconductor layer of at least one side of said irradiating locations.
Claim 5
Dependent Claim
191 words
A semiconductor laser comprising: cladding layers stacked on a substrate; and an active layer interposed between said cladding layers, said active layer being made of a material having band gap energy smaller than that of said cladding layers; wherein a stripe-like current injection area is provided so as to form a light emitting portion in said active layer, both end faces of said stripe-like light emitting portion are inclined in the direction whereby a light from said light emitting portion is reflected to advance in the direction of the side of said substrate; wherein a reflection film is provided in two irradiating locations on the reverse side of said substrate so that part of said light is irradiated from said reflection film portion and a remainder of said light is reflected using said reflection film as one wall surface of a resonator; and wherein a semiconductor layer is provided on the reverse side of said substrate, a reflection film on said irradiating locations is formed by said semiconductor layer and said substrate, and an output window is provided in said semiconductor layer of at least one side of said irradiating locations.
References Cited (Backward Citations)
US3901738A
Cited
US4567060A
Cited
US4633476A
Cited
US4890293A
Cited
US5020068A
Cited
US5042043A
Cited
US5268328A
Cited
EP0477013A2
Cited
US5210767A
Cited
US5235609A
Cited
US5060237A
Cited
US5253263A
Cited
US5386429A
Cited
US5218613A
Cited
US5488233A
Cited
US5432808A
Cited
US5436923A
Cited
US5395792A
Cited
US5583881A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-08-13 | 2005-02-12 | 2005-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-13 | 2009-02-12 | 2009-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-13 | 2013-02-12 | 2013-08-14 | $7700.00 | Window Closed / Lapsed |