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US6730163B2
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Aluminum-containing material and atomic layer deposition methods
Assignee: Micron Technology Inc
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Filing: 2002-03-14
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Granted: 2004-05-04
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Expires: 2022-03-14
Abstract
Abstract An aluminum-containing material deposition method includes depositing a first precursor on a substrate in the substantial absence of a second precursor. The first precursor can contain a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups containing 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms. The method includes depositing the second precursor on the first deposited precursor, the second precursor containing a nitrogen source or an oxidant. A deposition product of the first and second precursors includes at least one of an aluminum nitride or an aluminum oxide. The deposition method can be atomic layer deposition where the first and second precursors are chemisorbed or reacted as monolayers. The first precursor can further be non-pyrophoric.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; C23C16/22; C23C16/30; C23C16/301; C23C16/303; C23C16/40; C23C16/403; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P14/60; H10P14/66; H10P14/668; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
177 words
An aluminum-containing material deposition method comprising: depositing a first precursor on a substrate in the substantial absence of a second precursor, the first precursor exhibiting gas phase reactivity with the second precursor, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms; and depositing the second precursor on the first deposited precursor in the substantial absence of a non-deposited first precursor, the second precursor comprising at least one of a nitrogen source and an oxidant, and a deposition product of the first and second precursors comprising at least one of an aluminum nitride or an aluminum oxide.
Claim 2
Dependent Claim
177 words
An aluminum-containing material deposition method comprising: depositing a first precursor on a substrate in the substantial absence of a second precursor, the first precursor exhibiting gas phase reactivity with the second precursor, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms; and depositing the second precursor on the first deposited precursor in the substantial absence of a non-deposited first precursor, the second precursor comprising at least one of a nitrogen source and an oxidant, and a deposition product of the first and second precursors comprising at least one of an aluminum nitride or an aluminum oxide.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein the deposition method comprises atomic layer deposition and the first and second precursors are deposited as monolayers.
Claim 4
Dependent Claim
29 words
The method of claim 1 wherein the first precursor consists essentially of Al(N(CH 3 ) 2 ) 2 (N(CH 3 )CH 2 CH 2 N(CH 3 ) 2 ).
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein depositing the first precursor occurs at a temperature of from about 100° C. to about 450° C.
Claim 6
Dependent Claim
168 words
An atomic layer deposition method comprising: chemisorbing a first precursor on a substrate in the substantial absence of a second precursor, the first precursor exhibiting gas phase reactivity with the second precursor, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms; and reacting the second precursor with the first chemisorbed precursor, the second precursor comprising at least one of a nitrogen source and an oxidant, and a reaction product of the first and second precursors comprising at least one of an aluminum nitride or an aluminum oxide.
Claim 7
Dependent Claim
168 words
An atomic layer deposition method comprising: chemisorbing a first precursor on a substrate in the substantial absence of a second precursor, the first precursor exhibiting gas phase reactivity with the second precursor, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 8; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 10 carbon atoms with silicon optionally substituted for one or more carbon atoms; and reacting the second precursor with the first chemisorbed precursor, the second precursor comprising at least one of a nitrogen source and an oxidant, and a reaction product of the first and second precursors comprising at least one of an aluminum nitride or an aluminum oxide.
Claim 8
Dependent Claim
29 words
The method of claim 5 wherein the hydrocarbyl groups are selected from among alkyl, alkenyl, cycloalkyl, cycloalkenyl, or aryl with silicon optionally substituted for one or more carbon atoms.
Claim 9
Dependent Claim
24 words
The method of claim 5 wherein the first precursor is a liquid at a temperature of from about 20° C. to about 100° C.
Claim 10
Dependent Claim
23 words
The method of claim 5 wherein the first precursor is vaporized at a temperature of from about 25° C. to about 150° C.
Claim 11
Dependent Claim
31 words
The method of claim 5 wherein the first precursor exhibits a vapor pressure of at least about 0.1 Torr at a temperature of from about 25° C. to about 150° C.
Claim 12
Dependent Claim
49 words
The method of claim 5 wherein the first precursor exhibits a chemisorption rate of at least about 0.5 monolayers per second at 10 −4 Torr with a solid surface comprising an oxide having hydroxyl groups on the oxide surface, platinum, rhodium, iridium, titanium, TiN, TaN, TaSiN, TiBN, or silicon.
Claim 13
Dependent Claim
11 words
The method of claim 5 wherein the first precursor is non-pyrophoric.
Claim 14
Dependent Claim
22 words
The method of claim 5 wherein the first precursor comprises a single species and is optionally mixed with a non-reactive carrier gas.
Claim 15
Dependent Claim
13 words
The method of claim 5 wherein the chemisorbed first precursor forms a monolayer.
Claim 16
Dependent Claim
20 words
The method of claim 5 wherein the substrate comprises at least one of an oxide material and a metal element.
Claim 17
Dependent Claim
19 words
The method of claim 5 wherein the substrate comprises at least one of metal oxide, platinum, titanium, and TiN.
Claim 18
Dependent Claim
23 words
The method of claim 5 wherein chemisorbing the first precursor occurs at a temperature of from about 100° C. to about 450° C.
Claim 19
Dependent Claim
14 words
The method of claim 5 wherein z is an integer from 2 to 4.
Claim 20
Dependent Claim
34 words
The method of claim 5 wherein R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 5 carbon atoms with silicon optionally substituted for one or more carbon atoms.
Claim 21
Dependent Claim
31 words
The method of claim 5 wherein the second precursor comprises at least one of O 2 , O 3 , H 2 O, ammonia, hydrazine, alkyl-hydrazine compounds, and other hydrazine derivatives.
Claim 22
Dependent Claim
21 words
The method of claim 5 wherein chemisorbing the second precursor occurs at substantially the same temperature as chemisorbing the first precursor.
Claim 23
Dependent Claim
17 words
The method of claim 5 wherein the chemisorption product comprises AlN or Al 2 O 3 .
Claim 24
Dependent Claim
185 words
An atomic layer deposition method comprising: chemisorbing a first precursor on a substrate at a temperature of from about 150° C. to about 250° C. in the substantial absence of a second precursor, the first precursor exhibiting gas phase reactivity with the second precursor, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 4; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 5 carbon atoms with silicon optionally substituted for one or more carbon atoms; and reacting the second precursor with the first chemisorbed precursor at substantially the same temperature, the second precursor comprising at least one of a nitrogen source and an oxidant, and a reaction product of the first and second precursors comprising at least one of AlN or Al 2 O 3 .
Claim 25
Dependent Claim
185 words
An atomic layer deposition method comprising: chemisorbing a first precursor on a substrate at a temperature of from about 150° C. to about 250° C. in the substantial absence of a second precursor, the first precursor exhibiting gas phase reactivity with the second precursor, the first precursor comprising a chelate of Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z NR 4 R 5 ) y or Al(NR 1 R 2 ) x (NR 3 (CH 2 ) z OR 4 ) y ; where x is 0, 1, or 2; y is 3−x; z is an integer from 2 to 4; and R 1 to R 5 are independently selected from among hydrocarbyl groups comprising 1 to 5 carbon atoms with silicon optionally substituted for one or more carbon atoms; and reacting the second precursor with the first chemisorbed precursor at substantially the same temperature, the second precursor comprising at least one of a nitrogen source and an oxidant, and a reaction product of the first and second precursors comprising at least one of AlN or Al 2 O 3 .
Claim 26
Dependent Claim
24 words
The method of claim 22 wherein the first precursor is a liquid at a temperature of from about 20° C. to about 100° C.
Claim 27
Dependent Claim
23 words
The method of claim 22 wherein the first precursor is vaporized at a temperature of from about 25° C. to about 150° C.
Claim 28
Dependent Claim
31 words
The method of claim 22 wherein the first precursor exhibits a vapor pressure of at least about 0.1 Torr at a temperature of from about 25° C. to about 150° C.
Claim 29
Dependent Claim
49 words
The method of claim 22 wherein the first precursor exhibits a chemisorption rate of at least about 0.5 monolayers per second at 10 −4 Torr with a solid surface comprising an oxide having hydroxyl groups on the oxide surface, platinum, rhodium, iridium, titanium, TiN, TaN, TaSiN, TiBN, or silicon.
Claim 30
Dependent Claim
11 words
The method of claim 22 wherein the first precursor is non-pyrophoric.
Claim 31
Dependent Claim
22 words
The method of claim 22 wherein the first precursor comprises a single species and is optionally mixed with a non-reactive carrier gas.
Claim 32
Dependent Claim
157 words
An atomic layer deposition method comprising: chemisorbing a monolayer of a first precursor on a substrate at a temperature of from about 100° C. to about 400° C. in the substantial absence of a second precursor, the first precursor consisting essentially of Al(N(CH 3 ) 2 ) 2 (N(CH 3 )CH 2 CH 2 N(CH 3 ) 2 ) and the substrate comprising at least one of metal oxide, platinum, titanium, and TiN; purging the first precursor from the over the substrate; reacting a monolayer of the second precursor with the first chemisorbed precursor, the second precursor comprising at least one of a nitrogen source and an oxidant, and a reaction product of the first and second precursors comprising at least one of AlN or Al 2 O 3 ; purging the second precursor from the over the substrate; and successively repeating exposure and purging of the first and second precursors to form a capacitor dielectric layer.
Claim 33
Dependent Claim
157 words
An atomic layer deposition method comprising: chemisorbing a monolayer of a first precursor on a substrate at a temperature of from about 100° C. to about 400° C. in the substantial absence of a second precursor, the first precursor consisting essentially of Al(N(CH 3 ) 2 ) 2 (N(CH 3 )CH 2 CH 2 N(CH 3 ) 2 ) and the substrate comprising at least one of metal oxide, platinum, titanium, and TiN; purging the first precursor from the over the substrate; reacting a monolayer of the second precursor with the first chemisorbed precursor, the second precursor comprising at least one of a nitrogen source and an oxidant, and a reaction product of the first and second precursors comprising at least one of AlN or Al 2 O 3 ; purging the second precursor from the over the substrate; and successively repeating exposure and purging of the first and second precursors to form a capacitor dielectric layer.
References Cited (Backward Citations)
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