Patent US6703277B1 successfully refreshed from Google Patents.
US6703277B1
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Reducing agent for high-K gate dielectric parasitic interfacial layer
Assignee: GlobalFoundries US Inc
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Filing: 2002-04-08
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Granted: 2004-03-09
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Expires: 2022-04-08
Abstract
Abstract A semiconductor device and a process for fabricating the device, the process including steps of depositing on the silicon substrate a layer comprising at least one high-K dielectric material, whereby a quantity of silicon dioxide is formed at an interface between the silicon substrate and the high-K dielectric material layer; depositing on the high-K dielectric material layer a layer of a metal; and diffusing the metal through the high-K dielectric material layer, whereby the metal reduces at least a portion of the silicon dioxide to silicon and the metal is oxidized to form a dielectric material having a K value greater than silicon dioxide. In another embodiment, the metal is implanted into the interfacial layer. A semiconductor device including such metal layer and implanted metal is also provided.
Inventors
- 👤 Eric N. Paton
- 👤 Bin Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; H10D64/031; H10D64/033; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10P14/6516; H10P14/6518; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P30/00; H10P30/40; H10P32/00; H10P32/20; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D30/00; H10D30/60; H10D64/01342; H10D64/681; H10D64/685
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
106 words
A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: depositing on the silicon substrate a layer comprising at least one high-K dielectric material, whereby a quantity of silicon dioxide is formed at an interface between the silicon substrate and the high-K dielectric material layer; depositing on the high-K dielectric material layer a layer of a metal; and diffusing the metal through the high-K dielectric material layer, whereby the metal reduces at least a portion of the silicon dioxide to silicon and the metal is oxidized to form a dielectric material having a K value greater than silicon dioxide.
Claim 2
Dependent Claim
106 words
A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: depositing on the silicon substrate a layer comprising at least one high-K dielectric material, whereby a quantity of silicon dioxide is formed at an interface between the silicon substrate and the high-K dielectric material layer; depositing on the high-K dielectric material layer a layer of a metal; and diffusing the metal through the high-K dielectric material layer, whereby the metal reduces at least a portion of the silicon dioxide to silicon and the metal is oxidized to form a dielectric material having a K value greater than silicon dioxide.
Claim 3
Dependent Claim
20 words
The process of claim 1 , wherein the metal preferentially forms an oxide or a silicate rather than a silicide.
Claim 4
Dependent Claim
18 words
The process of claim 1 , wherein the high-K dielectric material is deposited by ALCVD, RTCVD or MOCVD.
Claim 5
Dependent Claim
142 words
The process of claim 1 , wherein the high-K dielectric material comprises at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide (TiO 2 ), cerium oxide (CeO 2 ), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAlO 3 ), lead titanate (PbTiO 3 ), silicon titanate (SiTiO 3 ), lead zirconate (PbZrO 3 ), tungsten oxide (WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium titanate (BST) (Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ), and PST (PbSc x Ta 1−x O 3 ).
Claim 6
Dependent Claim
22 words
The process of claim 1 , wherein the metal comprises titanium, tantalum, calcium, aluminum, hafnium, zirconium, vanadium tungsten, yttrium or mixtures thereof.
Claim 7
Dependent Claim
18 words
The process of claim 1 , further comprising depositing a polysilicon or polysilicon-germanium layer over the metal layer.
Claim 8
Dependent Claim
100 words
A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: depositing on the silicon substrate a layer comprising at least one high-K dielectric material, whereby a quantity of silicon dioxide is formed at an interface between the silicon substrate and the high-K dielectric material layer; implanting a metal to a vicinity of the silicon dioxide; and subjecting the metal to conditions whereby the metal reduces at least a portion of the silicon dioxide to silicon and the metal is oxidized to form a dielectric material having a K value greater than silicon dioxide.
Claim 9
Dependent Claim
100 words
A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: depositing on the silicon substrate a layer comprising at least one high-K dielectric material, whereby a quantity of silicon dioxide is formed at an interface between the silicon substrate and the high-K dielectric material layer; implanting a metal to a vicinity of the silicon dioxide; and subjecting the metal to conditions whereby the metal reduces at least a portion of the silicon dioxide to silicon and the metal is oxidized to form a dielectric material having a K value greater than silicon dioxide.
Claim 10
Dependent Claim
20 words
The process of claim 7 , wherein the metal preferentially forms an oxide or a silicate rather than a silicide.
Claim 11
Dependent Claim
18 words
The process of claim 7 , wherein the high-K dielectric material is deposited by ALCVD, RTCVD or MOCVD.
Claim 12
Dependent Claim
142 words
The process of claim 7 , wherein the high-K dielectric material comprises at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide (TiO 2 ), cerium oxide (CeO 2 ), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAlO 3 ), lead titanate (PbTiO 3 ), silicon titanate (SiTiO 3 ), lead zirconate (PbZrO 3 ), tungsten oxide (WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium titanate (BST) (Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ), and PST (PbSc x Ta 1−x O 3 ).
Claim 13
Dependent Claim
22 words
The process of claim 7 , wherein the metal comprises titanium, tantalum, calcium, aluminum, hafnium, zirconium, vanadium, tungsten, yttrium or mixtures thereof.
Claim 14
Dependent Claim
20 words
The process of claim 7 , further comprising depositing a polysilicon or polysilicon-germanium layer over the high-K dielectric material layer.
Claim 15
Dependent Claim
97 words
A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: depositing on the silicon substrate a layer comprising at least one high-K dielectric material, whereby a quantity of silicon dioxide is formed at an interface between the silicon substrate and the high-K dielectric material layer; providing a metal at the interface; and subjecting the semiconductor device to conditions whereby the metal reduces at least a portion of the silicon dioxide to silicon and the metal is oxidized to form a dielectric material having a K value greater than silicon dioxide.
Claim 16
Dependent Claim
97 words
A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: depositing on the silicon substrate a layer comprising at least one high-K dielectric material, whereby a quantity of silicon dioxide is formed at an interface between the silicon substrate and the high-K dielectric material layer; providing a metal at the interface; and subjecting the semiconductor device to conditions whereby the metal reduces at least a portion of the silicon dioxide to silicon and the metal is oxidized to form a dielectric material having a K value greater than silicon dioxide.
Claim 17
Dependent Claim
20 words
The process of claim 13 , wherein the metal preferentially forms an oxide or a silicate rather than a silicide.
Claim 18
Dependent Claim
18 words
The process of claim 13 , wherein the high-K dielectric material is deposited by ALCVD, RTCVD or MOCVD.
Claim 19
Dependent Claim
142 words
The process of claim 13 , wherein the high-K dielectric material comprises at least one of hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), tantalum oxide (Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide (TiO 2 ), cerium oxide (CeO 2 ), lanthanum oxide (La 2 O 3 ), lanthanum aluminum oxide (LaAlO 3 ), lead titanate (PbTiO 3 ), silicon titanate (SiTiO 3 ), lead zirconate (PbZrO 3 ), tungsten oxide (WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium titanate (BST) (Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT (PbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ), and PST (PbSc x Ta 1−x O 3 ).
Claim 20
Dependent Claim
22 words
The process of claim 13 , wherein the metal comprises titanium, tantalum, calcium, aluminum, hafnium, zirconium, vanadium, tungsten, yttrium or mixtures thereof.
Claim 21
Dependent Claim
47 words
The process of claim 13 , wherein the metal is provided by deposition of a layer of the metal over the high-K dielectric material layer, followed by diffusing the metal through the high-K dielectric material layer to a vicinity of the silicon dioxide formed at the interface.
Claim 22
Dependent Claim
27 words
The process of claim 13 , wherein the metal is provided by implantation of the metal to a vicinity of the silicon dioxide formed at the interface.
Claim 23
Dependent Claim
20 words
The process of claim 13 , further comprising depositing a polysilicon or polysilicon-germanium layer over the high-K dielectric material layer.
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