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US6693474B2 Expired / Lapsed US ⏱️ 0.0 years remaining

Delay locked loop DLL in semiconductor device

Assignee: SK Hynix Inc
•
Filing: 2002-12-31
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Granted: 2004-02-17
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Expires: 2022-12-31
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Abstract

Abstract A semiconductor device has a DLL circuit for generating an internal clock signal by receiving an external clock signal, wherein the DLL circuit includes a delay model for modeling delay time of an intern clock signal delayed from an external clock signal and a power supply for adjusting a core voltage by an input output voltage and supplying the adjusted voltage to the delay model.

Inventors

  • 👤 Si-Hong Kim

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 20:22
CPC Classifications
H; H03; H03L; H03L7/00; H03L7/06; H03L7/08; H03L7/081; H03L7/0812

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 65 words
A semiconductor device comprising a DLL circuit for generating an internal clock signal by receiving an external clock signal, wherein the DLL circuit includes: a delay model for modeling delay time of the internal clock signal delayed from the external clock signal; and a power supply for adjusting a core voltage by an input output voltage and supplying the adjusted voltage to the delay model.
Claim 2
Dependent Claim 65 words
A semiconductor device comprising a DLL circuit for generating an internal clock signal by receiving an external clock signal, wherein the DLL circuit includes: a delay model for modeling delay time of the internal clock signal delayed from the external clock signal; and a power supply for adjusting a core voltage by an input output voltage and supplying the adjusted voltage to the delay model.
Claim 3
Dependent Claim 44 words
The semiconductor device as recited in claim 1 , wherein the power supply includes: a noise filter for filtering a noise of the I/O voltage; and a voltage adjusting unit for adjusting the core voltage by the noise-filtered I/O voltage as a reference voltage.
Claim 4
Dependent Claim 25 words
The semiconductor device as recited in claim 2 , wherein the noise filter is a low pass filter consisting of a resistance and a capacitor.
Claim 5
Dependent Claim 135 words
The semiconductor device as recited in claim 2 , wherein the voltage adjusting unit includes: first and second NMOS transistors whose gates are coupled to the noise filter and the delay model, respectively; a third NOS transistor coupled between a common node of the first and second NMOS transistors and a ground voltage and an enable signal is applied to a gate thereof; a first PMOS transistor, which is diode-coupled, for supplying the core voltage to the second NMOS transistor; a second PMOS transistor for supplying the core voltage to the first NMOS transistor, wherein the second PMOS transistor forms a current mirror with the first PMOS transistor; and a third PMOS transistor PMOS transistor for supplying the core voltage to the delay model and a gate thereof is coupled to the first NMOS transistor.

References Cited (Backward Citations)

US6314052B2 Cited
US5771264A Cited
US6446180B2 Cited
US6333896B1 Cited
US6549041B2 Cited
US6385129B1 Cited
US6605969B2 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2007-02-16 2007-08-18 2008-02-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2011-02-16 2011-08-18 2012-02-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2015-02-16 2015-08-18 2016-02-17 $7700.00 Window Closed / Lapsed

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