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US6690042B2
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Metal oxide semiconductor heterostructure field effect transistor
Assignee: Sensor Electronic Technology Inc
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Filing: 2001-09-27
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Granted: 2004-02-10
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Expires: 2021-09-27
Abstract
Abstract A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.
Inventors
- 👤 Muhammad Asif Khan
- 👤 Remigilus Gaska
- 👤 Michael Shur
- 👤 Jinwci Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 04:49
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/4755; H10D30/60; H10D62/00; H10D62/80; H10D62/85; H10D62/8503
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
45 words
A nitride based heterostructure device comprising: a substrate; a first layer over the substrate wherein the first layer includes nitrogen; a dielectric layer over the first layer, wherein the dielectric layer includes silicon dioxide; and a contact disposed above and adjoining to the dielectric layer.
Claim 2
Dependent Claim
45 words
A nitride based heterostructure device comprising: a substrate; a first layer over the substrate wherein the first layer includes nitrogen; a dielectric layer over the first layer, wherein the dielectric layer includes silicon dioxide; and a contact disposed above and adjoining to the dielectric layer.
Claim 3
Dependent Claim
23 words
The device of claim 1 , wherein the substrate includes one of the group comprising sapphire, silicon carbide, a spinel substrate and silicon.
Claim 4
Dependent Claim
13 words
The device of claim 1 , wherein the first layer further includes gallium.
Claim 5
Dependent Claim
26 words
The device of claim 1 , further comprising a second layer positioned between the first layer and the dielectric layer wherein the second layer includes nitrogen.
Claim 6
Dependent Claim
15 words
The device of claim 4 , wherein the second layer further includes aluminum and gallium.
Claim 7
Dependent Claim
13 words
The device of claim 4 , wherein the second layer further includes indium.
Claim 8
Dependent Claim
26 words
The device of claim 4 , wherein a composition of the first layer changes over distance and a composition of the second layer changes over distance.
Claim 9
Dependent Claim
30 words
The device of claim 4 , wherein a composition of the first layer remains substantially constant over distance and a composition of the second layer remains substantially constant over distance.
Claim 10
Dependent Claim
64 words
The device of claim 1 , wherein the device is used as one of the group comprising a photodetector, a field effect transistor, a gated bipolar junction transistor, a gated hot electron transistor, a gated heterostructure bipolar junction transistor, a gas sensor, a liquid sensors a pressure sensor, a multi function sensor of pressure and temperature, a power switching device and a microwave device.
Claim 11
Dependent Claim
26 words
The heterostructure device of claim 1 , wherein the heterostructure device allows a leakage current of about one picoAmpere at a reverse bias of five volts.
Claim 12
Dependent Claim
43 words
A nitride based heterostructure device comprising: a substrate; an active layer over the substrate wherein the active layer includes gallium and nitrogen; a dielectric layer over the active layer wherein the dielectric layer includes silicon dioxide; and a contact on the dielectric layer.
Claim 13
Dependent Claim
43 words
A nitride based heterostructure device comprising: a substrate; an active layer over the substrate wherein the active layer includes gallium and nitrogen; a dielectric layer over the active layer wherein the dielectric layer includes silicon dioxide; and a contact on the dielectric layer.
Claim 14
Dependent Claim
29 words
The heterostructure device of claim 11 , further comprising a barrier layer disposed between the active layer and the dielectric layer wherein the barrier layer includes aluminum and nitrogen.
Claim 15
Dependent Claim
24 words
The heterostructure device of claim 11 , wherein the substrate includes one of the group comprising sapphire, silicon carbide, a spinel substrate and silicon.
Claim 16
Dependent Claim
14 words
The heterostructure device of claim 11 , wherein the active layer further comprises indium.
Claim 17
Dependent Claim
26 words
The heterostructure device of claim 11 , wherein the heterostructure device allows a leakage current of about one picoAmpere at a reverse bias of five volts.
Claim 18
Dependent Claim
76 words
A nitride based heterostructure transistor comprising: a substrate; a buffer layer on the substrate, wherein the buffer layer includes aluminum and nitrogen; an active layer on the buffer layer wherein the active layer includes gallium and nitrogen; a barrier layer over on the active layer wherein the barrier layer includes aluminum and nitrogen; a dielectric layer over on the barrier layer, wherein the dielectric layer includes silicon dioxide; and a first contact on the dielectric layer.
Claim 19
Dependent Claim
76 words
A nitride based heterostructure transistor comprising: a substrate; a buffer layer on the substrate, wherein the buffer layer includes aluminum and nitrogen; an active layer on the buffer layer wherein the active layer includes gallium and nitrogen; a barrier layer over on the active layer wherein the barrier layer includes aluminum and nitrogen; a dielectric layer over on the barrier layer, wherein the dielectric layer includes silicon dioxide; and a first contact on the dielectric layer.
Claim 20
Dependent Claim
22 words
The heterostructure transistor of claim 16 , wherein at least a portion of the barrier layer remains uncovered by the dielectric layer.
Claim 21
Dependent Claim
36 words
The heterostructure transistor of claim 17 , further comprising: a source contact on the barrier layer; a drain contact on the barrier layer; and wherein the first contact on the dielectric layer comprises a gate contact.
Claim 22
Dependent Claim
20 words
The heterostructure transistor of claim 18 , wherein the dielectric layer further contacts the source contact and the drain contact.
Claim 23
Dependent Claim
23 words
The heterostructure transistor of claim 16 , wherein the active layer comprises an insulating layer and an n-type layer on the insulating layer.
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