Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications

Claim 2

A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfacial layer a layer comprising at least one high-K dielectric material, wherein the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof, and wherein the high-K dielectric material comprises at least one of hafnium oxide(HfO 2 ), zirconium oxide(ZrO 2 ), tantalum oxide(Ta 2 O 5 ), barium titanate (BaTiO 3 ), titanium dioxide(TiO 2 ), cerium oxide(CeO 2 ), lanthanum oxide(La 2 O 3 ), lead titanate (PbTiO 3 ), silicon titanate(SrTiO 3 ), lead zirconate(PbZrO 3 ), tungsten oxide(WO 3 ), yttrium oxide (Y 2 O 3 ), bismuth silicon oxide(Bi 1 Si 2 O 12 ), barium strontium titanate(BST)(Ba 1−x Sr x TiO 3 ), PMN (PbMg x Nb 1−x O 3 ), PZT(pbZr x Ti 1−x O 3 ), PZN (PbZn x Nb 1−x O 3 ), and PST(PbSc x Ta 1−x O 3 ).

Claim 3

The process of claim 1 , wherein the silicon-containing dielectric material is silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof.

Claim 4

The process of claim 1 , wherein the laser excitation uses a laser operating in the ultraviolet wavelength range.

Claim 5

The process of claim 1 , wherein the layer of high-K dielectric material is deposited by ALCVD, RTCVD or MOCVD.

Claim 6

The process of claim 1 , flier comprising depositing on the layer of high-K dielectric material an interfacial barrier layer of a dielectric material.

Claim 7

The process of claim 5 , wherein the interfacial barrier layer comprises a dielectric material comprising aluminum oxide, silicon oxynitride, silicon nitride or mixtures thereof.

Claim 8

The process of claim 5 , wherein the interfacial barrier layer is deposited by ALCVD, RTCVD or MOCVD.

Claim 9

The process of claim 5 , further comprising depositing a polysilicon or polysilicon-germanium layer over the interfacial barrier layer.

Claim 10

A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: growing on the silicon substrate an interfacial layer of a dielectric material comprising silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof; and depositing on the interfacial layer by ALCVD, RTCVD or MOCVD a layer comprising at least one high-K dielectric material, wherein the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof, and wherein the high-K dielectric material comprises at least one of hafnium oxide(HfO 2 ), zirconium oxide(ZrO 2 ), tantalum oxide(Ta 2 O 5 ), barium titanate(BaTiO 3 ), titanium dioxide(TiO 2 ), cerium oxide(CeO 2 ), tantalum oxide(La 2 O 3 ), lead titanate(PbTiO 3 ), silicon titanate(SrTiO 3 ), lead zirconate(PbZro 3 ), tungsten oxide(WO 3 ) yttrium oxide (Y 2 O 3 ), bismuth silicon oxide(Bi 1 Si 2 O 12 ), barium strontium titanate(BST)(Ra 1−x Sr x TiO 3 ), PMN(PbMg x Nb 1−x O 3 ), PZT(PbZr x Ti 1−x O 3 ), PZN(PbZn x Nb 1−x O 3 ), and PST(PbSc x Ta 1−x O 3 ).

Claim 11

A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: growing on the silicon substrate an interfacial layer of a dielectric material comprising silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof; and depositing on the interfacial layer by ALCVD, RTCVD or MOCVD a layer comprising at least one high-K dielectric material, wherein the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof, and wherein the high-K dielectric material comprises at least one of hafnium oxide(HfO 2 ), zirconium oxide(ZrO 2 ), tantalum oxide(Ta 2 O 5 ), barium titanate(BaTiO 3 ), titanium dioxide(TiO 2 ), cerium oxide(CeO 2 ), tantalum oxide(La 2 O 3 ), lead titanate(PbTiO 3 ), silicon titanate(SrTiO 3 ), lead zirconate(PbZro 3 ), tungsten oxide(WO 3 ) yttrium oxide (Y 2 O 3 ), bismuth silicon oxide(Bi 1 Si 2 O 12 ), barium strontium titanate(BST)(Ra 1−x Sr x TiO 3 ), PMN(PbMg x Nb 1−x O 3 ), PZT(PbZr x Ti 1−x O 3 ), PZN(PbZn x Nb 1−x O 3 ), and PST(PbSc x Ta 1−x O 3 ).

Claim 12

The process of claim 9 , wherein the laser excitation uses a laser operating in the ultraviolet wavelength range.

Claim 13

The process of claim 9 , further comprising depositing on the layer of high-K dielectric material an interfacial barrier layer of a dielectric material.

Claim 14

The process of claim 11 , wherein the interfacial barrier layer comprises a dielectric material comprising aluminum oxide, silicon oxynitride, silicon nitride or mixtures thereof.

Claim 15

The process of claim 11 , wherein the interfacial barrier layer is deposited by ALCVD, RTCVD or MOCVD.

Claim 16

The process of claim 11 , further comprising depositing a polysilicon or polysilicon-germanium layer over the interfacial barrier layer.

Claim 17

A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: growing on the silicon substrate an interfacial layer of a dielectric material comprising silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof; depositing on the interfacial layer by ALCVD, RTCVD or MOCVD a layer comprising at least one high-K dielectric material; depositing on the layer comprising at least one high-K dielectric material an interfacial barrier layer; and forming a gate electrode on the interfacial barrier layer, wherein the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof, and wherein the high-K dielectric material comprises at least one of hafnium oxide(HfO 2 ), zirconium oxide(ZrO 2 ), tantalum oxide(Ta 2 O 5 ), barium titanate(BaTiO 3 ), tanium dioxide(TiO 2 ), cerium oxide(CeO 2 ), lanthanum oxide(La 2 O 3 ), lead titanate(PbTiO 3 ), silicon titanate(SrTiO 3 ), lead zirconate(PbZrO 3 ), tungsten oxide(WO 3 ), yttrium oxide(Y 2 O 3 ), bismuth silicon oxide(Bi 1 Si 2 O 12 ), barium strontium titanate(BST)(Ba 1−x Sr x TiO 3 ), PMN(PbMg x Nb 1−x O 3 ), PZT(PbZr x Ti 1−x O 3 ), PZN(PbZn x Nb 1−x O 3 ), and PST(PbSc x O 3 ).

Claim 18

A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, comprising: growing on the silicon substrate an interfacial layer of a dielectric material comprising silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof; depositing on the interfacial layer by ALCVD, RTCVD or MOCVD a layer comprising at least one high-K dielectric material; depositing on the layer comprising at least one high-K dielectric material an interfacial barrier layer; and forming a gate electrode on the interfacial barrier layer, wherein the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof, and wherein the high-K dielectric material comprises at least one of hafnium oxide(HfO 2 ), zirconium oxide(ZrO 2 ), tantalum oxide(Ta 2 O 5 ), barium titanate(BaTiO 3 ), tanium dioxide(TiO 2 ), cerium oxide(CeO 2 ), lanthanum oxide(La 2 O 3 ), lead titanate(PbTiO 3 ), silicon titanate(SrTiO 3 ), lead zirconate(PbZrO 3 ), tungsten oxide(WO 3 ), yttrium oxide(Y 2 O 3 ), bismuth silicon oxide(Bi 1 Si 2 O 12 ), barium strontium titanate(BST)(Ba 1−x Sr x TiO 3 ), PMN(PbMg x Nb 1−x O 3 ), PZT(PbZr x Ti 1−x O 3 ), PZN(PbZn x Nb 1−x O 3 ), and PST(PbSc x O 3 ).

Claim 19

The process of claim 15 , wherein the interfacial barrier layer comprises a dielectric material comprising aluminum oxide, silicon oxynitride, silicon nitride or mixtures thereof.

Claim 20

The process of claim 16 , wherein the interfacial barrier layer is deposited by ALCVD, RTCVD or MOCVD.

Claim 21

The process of claim 15 , wherein the laser is an ultraviolet laser.