US6682602B2
Expired / Lapsed
US
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Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands
Assignee: Micron Technology Inc
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Filing: 2002-08-19
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Granted: 2004-01-27
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Expires: 2022-08-19
Abstract
Abstract A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10B12/30; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10W20/056; H10B51/00; H10B51/30
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
115 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: wherein: M is a transition metal, a main group metal, or a lanthanide; each Y group is independently O or N—R 3 ; L is a neutral or anionic supporting ligand; each R group is independently H, or an organic group; x=0 to 6; n+ is the oxidation state of the metal; y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic; and a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
Claim 2
Dependent Claim
115 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: wherein: M is a transition metal, a main group metal, or a lanthanide; each Y group is independently O or N—R 3 ; L is a neutral or anionic supporting ligand; each R group is independently H, or an organic group; x=0 to 6; n+ is the oxidation state of the metal; y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic; and a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
Claim 3
Dependent Claim
11 words
The system of claim 1 wherein the deposition chamber is enclosed.
Claim 4
Dependent Claim
18 words
The system of claim 2 wherein the enclosed deposition chamber is a hot wall or cold wall reactor.
Claim 5
Dependent Claim
17 words
The system of claim 2 wherein the enclosed deposition chamber is an atmospheric or reduced pressure reactor.
Claim 6
Dependent Claim
14 words
The system of claim 1 wherein the deposition chamber is a plasma enhanced reactor.
Claim 7
Dependent Claim
15 words
The system of claim 1 wherein the substrate is a semiconductor substrate or substrate assembly.
Claim 8
Dependent Claim
17 words
The system of claim 1 wherein the system further comprises a heater operable to heat the substrate.
Claim 9
Dependent Claim
24 words
The system of claim 1 wherein the main group metal is selected from the group consisting of Groups IA, IIA, IVA, and VA metals.
Claim 10
Dependent Claim
21 words
The system of claim 1 wherein the transition metal is selected from the group consisting of Groups IB through VIIB metals.
Claim 11
Dependent Claim
22 words
The system of claim 1 wherein M is selected from the group consisting of Sr, Ba, Ti, Bi, Ta, Cu, and Ag.
Claim 12
Dependent Claim
19 words
The system of claim 1 wherein Y 1 and Y 2 are both O or both N—R 3 .
Claim 13
Dependent Claim
17 words
The system of claim 1 wherein Y 1 is O and y 2 is N—R 3 .
Claim 14
Dependent Claim
16 words
The system of claim 1 wherein the precursor composition further comprises one or more organic solvents.
Claim 15
Dependent Claim
18 words
The system of claim 13 wherein M is selected from the group consisting of Sr, Ba, and Ti.
Claim 16
Dependent Claim
20 words
The system of claim 1 wherein each R group is independently H or a (C 1 -C 4 )alkyl moiety.
Claim 17
Dependent Claim
25 words
The system of claim 1 wherein each L is independently selected from the group consisting of carbonyl, cyclopentadienyl, cyclooctadienyl, ethoxy, isopropoxy, vinyltrimethylsilane, and polyamine ligands.
Claim 18
Dependent Claim
12 words
The system of claim 1 wherein x=0, y=2, and M=Ba or Sr.
Claim 19
Dependent Claim
115 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: wherein: M is selected from the group consisting of Ba, Sr, and Ti; each Y group is independently O or N—R 3 ; L is a neutral or anionic supporting ligand; each R group is independently H, or an organic group; x=0 to 6; n+ is the oxidation state of the metal; y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic; and a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
Claim 20
Dependent Claim
115 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: wherein: M is selected from the group consisting of Ba, Sr, and Ti; each Y group is independently O or N—R 3 ; L is a neutral or anionic supporting ligand; each R group is independently H, or an organic group; x=0 to 6; n+ is the oxidation state of the metal; y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic; and a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
Claim 21
Dependent Claim
115 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: wherein: M is selected from the group consisting of Bi, Sr, and Ta; each Y group is independently O or N—R 3 ; L is a neutral or anionic supporting ligand; each R group is independently H, or an organic group; x=0 to 6; n+ is the oxidation state of the metal; y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic; and a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
Claim 22
Dependent Claim
115 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: wherein: M is selected from the group consisting of Bi, Sr, and Ta; each Y group is independently O or N—R 3 ; L is a neutral or anionic supporting ligand; each R group is independently H, or an organic group; x=0 to 6; n+ is the oxidation state of the metal; y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic; and a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
Claim 23
Dependent Claim
115 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: wherein: M is selected from the group consisting of Bi, Sr, and Nb; each Y group is independently O or N—R 3 ; L is a neutral or anionic supporting ligand; each R group is independently H, or an organic group; x=0 to 6; n+ is the oxidation state of the metal; y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic; and a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
Claim 24
Dependent Claim
115 words
A chemical vapor deposition system comprising: a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: wherein: M is selected from the group consisting of Bi, Sr, and Nb; each Y group is independently O or N—R 3 ; L is a neutral or anionic supporting ligand; each R group is independently H, or an organic group; x=0 to 6; n+ is the oxidation state of the metal; y=n if L is neutral, y=n−x if L is monoanionic, or y=n−2x if L is dianionic; and a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
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