US6667237B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for patterning fine dimensions
Assignee: Array Optronix Inc
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Filing: 2000-10-12
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Granted: 2003-12-23
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Expires: 2020-10-12
Abstract
Abstract A process of forming fine repetitive geometries using a mask having large mask dimensions. The pitch of the masking pattern on the mask is divided by the process to obtain a smaller pitch in the fine repetitive geometries. At least two working materials are used one of which can be etched without etching a substrate. In one embodiment the two working materials and the substrate are each etched independently. In other embodiments, the substrate and one working material have similar etch rates while the other material is etched independently. Pedestals are formed having an initial pitch. First sidewalls are formed around the pedestals. The pedestals are removed and a second and third sidewall are formed on the inside and outside surfaces of the first sidewall having spaces there-between. The first sidewall is removed generating another space between the second and third sidewall. The spaces and the widths of the second and third sidewalls form final pitches substantially smaller than the initial pitch of the pedestals. The process can be used in semiconductor manufacturing processes as well as other fields. Various geometric shapes for patterning by the method are disclosed.
Inventors
- 👤 Richard A. Metzler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:46
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00388; B81C1/00404; H; H10; H10P; H10P76/00; H10P76/40; H10P76/405; H10P76/408; H10P76/4085; H10P76/4088
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
81 words
A method of forming a repetitive pattern comprising: using a mask having a repetitive pattern with an initial pitch to form pedestals on a substrate having the initial pitch; forming first sidewalls having a first cross-sectional width on the substrate around the pedestals; removing the pedestals leaving the first sidewalls on the substrate having a first space there-between; and, wherein the first cross-sectional width and the first space form a first final pitch less than the initial pitch of the mask.
Claim 2
Independent Claim
81 words
A method of forming a repetitive pattern comprising: using a mask having a repetitive pattern with an initial pitch to form pedestals on a substrate having the initial pitch; forming first sidewalls having a first cross-sectional width on the substrate around the pedestals; removing the pedestals leaving the first sidewalls on the substrate having a first space there-between; and, wherein the first cross-sectional width and the first space form a first final pitch less than the initial pitch of the mask.
Claim 3
Dependent Claim
34 words
The method of claim 1 of forming a repetitive pattern, wherein, the repetitive pattern is formed on the substrate of a semiconductor wafer and the first sidewalls and the second sidewalls are semiconductor layers.
Claim 4
Dependent Claim
17 words
The method of claim 1 of forming a repetitive pattern, wherein, the first sidewalls form hollow cylinders.
Claim 5
Independent Claim
197 words
A method of forming a repetitive pattern comprising: using a mask having a repetitive pattern with an initial pitch to form pedestals on a substrate having the initial pitch; forming first sidewalls having a first cross-sectional width on the substrate around the pedestals; removing the pedestals leaving the first sidewalls on the substrate having a first space there-between; forming second sidewalls having a second cross-sectional width and third sidewalls having a third cross-sectional width on an inside surface and an outside surface respectively of the first sidewalls on the substrate, the second sidewalls and the third sidewalls being spaced apart by a second space; removing the first sidewalls leaving the second sidewalls and the third sidewalls and generating a third space between the second sidewalls and the third sidewalls; and, wherein the first cross-sectional width and the first space form a first final pitch less than the initial pitch of the mask and the second space and the second cross-sectional width form a second final pitch and the third space and the third cross-sectional width form a third final pitch, the second final pitch and the third final pitch less than the initial pitch of the mask.
Claim 6
Independent Claim
197 words
A method of forming a repetitive pattern comprising: using a mask having a repetitive pattern with an initial pitch to form pedestals on a substrate having the initial pitch; forming first sidewalls having a first cross-sectional width on the substrate around the pedestals; removing the pedestals leaving the first sidewalls on the substrate having a first space there-between; forming second sidewalls having a second cross-sectional width and third sidewalls having a third cross-sectional width on an inside surface and an outside surface respectively of the first sidewalls on the substrate, the second sidewalls and the third sidewalls being spaced apart by a second space; removing the first sidewalls leaving the second sidewalls and the third sidewalls and generating a third space between the second sidewalls and the third sidewalls; and, wherein the first cross-sectional width and the first space form a first final pitch less than the initial pitch of the mask and the second space and the second cross-sectional width form a second final pitch and the third space and the third cross-sectional width form a third final pitch, the second final pitch and the third final pitch less than the initial pitch of the mask.
Claim 7
Dependent Claim
32 words
The method of claim 4 of forming a repetitive pattern, wherein, the first sidewalls form first hollow cylinders; and the second sidewalls form second hollow cylinders concentric with the first hollow cylinders.
Claim 8
Independent Claim
163 words
A method of forming fine geometry patterns using a mask having larger mask pattern dimensions, the method comprising: providing a substrate and forming a repetitive pattern of pedestals on the substrate out of a first working material, the repetitive pattern of pedestals having an initial pitch; depositing a layer of a second working material on the substrate and the repetitive pattern of pedestals; vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding the side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing; etching away the repetitive pattern of pedestals leaving the first sidewalls of the second working material extending from the substrate; and wherein the first sidewalls have a first pitch of the first spacing and the first width less than the initial pitch of the repetitive pattern of pedestals.
Claim 9
Independent Claim
163 words
A method of forming fine geometry patterns using a mask having larger mask pattern dimensions, the method comprising: providing a substrate and forming a repetitive pattern of pedestals on the substrate out of a first working material, the repetitive pattern of pedestals having an initial pitch; depositing a layer of a second working material on the substrate and the repetitive pattern of pedestals; vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding the side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing; etching away the repetitive pattern of pedestals leaving the first sidewalls of the second working material extending from the substrate; and wherein the first sidewalls have a first pitch of the first spacing and the first width less than the initial pitch of the repetitive pattern of pedestals.
Claim 10
Dependent Claim
50 words
The method of claim 6 , wherein the etched away repetitive pattern of pedestals forms a second spacing of the first sidewalls and wherein the first sidewalls have a second pitch of the second spacing and the first width less than the initial pitch of the repetitive pattern of pedestals.
Claim 11
Dependent Claim
38 words
The method of claim 6 , wherein, the first working material and the second working material etch independently of each other and the second working material and the substrate material forming the substrate etch at the same rate.
Claim 12
Dependent Claim
37 words
The method of claim 6 , wherein, the first working material and the second working material etch independently of each other and the second working material and the substrate material forming the substrate etch at differing rates.
Claim 13
Dependent Claim
32 words
The method of claim 6 , wherein, the depositing of the layer of the second working material on the substrate and the repetitive pattern of pedestals is preformed using chemical vapor deposition.
Claim 14
Dependent Claim
28 words
The method of claim 6 , wherein, the vertically etching of horizontal portions of the layer of the second working material is preformed using a reactive ion etch.
Claim 15
Dependent Claim
22 words
The method of claim 6 , wherein, the etching away of the repetitive pattern of pedestals is preformed using a wet etch.
Claim 16
Dependent Claim
27 words
The method of claim 6 , wherein, the repetitive pattern is formed on the substrate of a semiconductor wafer and the first sidewalls are a semiconductor layer.
Claim 17
Independent Claim
313 words
A method of forming fine geometry patterns using a mask having larger mask pattern dimensions, the method comprising: providing a substrate and forming a repetitive pattern of pedestals on the substrate out of a first working material, the repetitive pattern of pedestals having an initial pitch; depositing a layer of a second working material on the substrate and the repetitive pattern of pedestals; vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding the side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing; etching away the repetitive pattern of pedestals leaving the first sidewalls of the second working material extending from the substrate; depositing a layer of the first working material on the substrate and the first sidewalls; vertically etching horizontal portions of the layer of the first working material to form second sidewalls of the first working material on inside surfaces of the first sidewalls and to form third sidewalls of the first working material on outside surfaces of the first sidewalls, the second sidewalls having a second width, the third sidewalls having a third width, the second sidewalls and the third sidewalls being spaced apart by a second spacing; etching away the first sidewalls leaving the second and third sidewalls of the first working material extending from the substrate, the etched away first sidewalls forming a third spacing between the second and third sidewalls; wherein the first sidewalls have a first pitch of the first spacing and the first width less than the initial pitch of the repetitive pattern of pedestals; and wherein the second sidewalls have a second pitch of the second spacing and the second width less than the initial pitch of the repetitive pattern of pedestals.
Claim 18
Independent Claim
313 words
A method of forming fine geometry patterns using a mask having larger mask pattern dimensions, the method comprising: providing a substrate and forming a repetitive pattern of pedestals on the substrate out of a first working material, the repetitive pattern of pedestals having an initial pitch; depositing a layer of a second working material on the substrate and the repetitive pattern of pedestals; vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding the side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing; etching away the repetitive pattern of pedestals leaving the first sidewalls of the second working material extending from the substrate; depositing a layer of the first working material on the substrate and the first sidewalls; vertically etching horizontal portions of the layer of the first working material to form second sidewalls of the first working material on inside surfaces of the first sidewalls and to form third sidewalls of the first working material on outside surfaces of the first sidewalls, the second sidewalls having a second width, the third sidewalls having a third width, the second sidewalls and the third sidewalls being spaced apart by a second spacing; etching away the first sidewalls leaving the second and third sidewalls of the first working material extending from the substrate, the etched away first sidewalls forming a third spacing between the second and third sidewalls; wherein the first sidewalls have a first pitch of the first spacing and the first width less than the initial pitch of the repetitive pattern of pedestals; and wherein the second sidewalls have a second pitch of the second spacing and the second width less than the initial pitch of the repetitive pattern of pedestals.
Claim 19
Dependent Claim
33 words
The method of claim 14 , wherein, the third sidewalls have a third pitch of the third spacing and the third width less than the initial pitch of the repetitive pattern of pedestals.
Claim 20
Dependent Claim
112 words
The method of claim 14 , further comprising: etching the substrate where exposed in the second spacing and the third spacing between the second and third sidewalls to form extended second and third sidewalls of substrate material; etching the second and third sidewalls of the first working material away from the substrate leaving the extended second and third sidewalls of the substrate material; and wherein the extended second sidewalls of the substrate material have the second pitch less than the initial pitch of the repetitive pattern of pedestals and the extended third sidewalls of the substrate material have the third pitch less than the initial pitch of the repetitive pattern of pedestals.
Claim 21
Dependent Claim
30 words
The method of claim 14 , wherein, the depositing of the layer of the first working material on the substrate and the first sidewalls is preformed using chemical vapor deposition.
Claim 22
Dependent Claim
28 words
The method of claim 14 , wherein, the vertically etching of horizontal portions of the layer of the first working material is preformed using a reactive ion etch.
Claim 23
Dependent Claim
20 words
The method of claim 14 , wherein, the etching away of the first sidewalls is preformed using a wet etch.
Claim 24
Dependent Claim
38 words
The method of claim 14 , wherein, the first working material and the second working material etch independently of each other and the second working material and the substrate material forming the substrate etch at the same rate.
Claim 25
Dependent Claim
37 words
The method of claim 14 , wherein, the first working material and the second working material etch independently of each other and the second working material and the substrate material forming the substrate etch at differing rates.
Claim 26
Dependent Claim
50 words
The method of claim 14 , wherein the etched away repetitive pattern of pedestals forms a second spacing of the first sidewalls and wherein the first sidewalls have a second pitch of the second spacing and the first width less than the initial pitch of the repetitive pattern of pedestals.
Claim 27
Independent Claim
168 words
A method of forming a repetitive pattern of at least one semiconductive layer over a semiconductor wafer, the method comprising: forming a repetitive pattern of pedestals of a first working material over the semiconductor wafer, the repetitive pattern of pedestals having an initial pitch; depositing a layer of a second working material over the semiconductor wafer; vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing; etching away the repetitive pattern of pedestals of the first working material leaving the first sidewalls of the second working material formed on the semiconductor wafer; and wherein the first sidewalls have a first pitch of the first spacing and the first width, the first pitch of the first sidewalls less than the initial pitch of the repetitive pattern of pedestals.
Claim 28
Independent Claim
168 words
A method of forming a repetitive pattern of at least one semiconductive layer over a semiconductor wafer, the method comprising: forming a repetitive pattern of pedestals of a first working material over the semiconductor wafer, the repetitive pattern of pedestals having an initial pitch; depositing a layer of a second working material over the semiconductor wafer; vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing; etching away the repetitive pattern of pedestals of the first working material leaving the first sidewalls of the second working material formed on the semiconductor wafer; and wherein the first sidewalls have a first pitch of the first spacing and the first width, the first pitch of the first sidewalls less than the initial pitch of the repetitive pattern of pedestals.
Claim 29
Dependent Claim
62 words
The method of claim 23 , wherein the etched away repetitive pattern of pedestals of the first working material forms a second spacing of the first sidewalls and wherein the first sidewalls have a second pitch of the second spacing and the first width, the second pitch of the first sidewalls less than the initial pitch of the repetitive pattern of pedestals.
Claim 30
Dependent Claim
21 words
The method of claim 23 , wherein, the first working material and the second working material etch independently of each other.
Claim 31
Dependent Claim
23 words
The method of claim 23 , wherein, the depositing of the layer of the second working material is preformed using chemical vapor deposition.
Claim 32
Dependent Claim
28 words
The method of claim 23 , wherein, the vertically etching of horizontal portions of the layer of the second working material is preformed using a reactive ion etch.
Claim 33
Dependent Claim
22 words
The method of claim 23 , wherein, the etching away of the repetitive pattern of pedestals is preformed using a wet etch.
Claim 34
Independent Claim
322 words
A method of forming a repetitive pattern of at least one semiconductive layer over a semiconductor wafer, the method comprising: forming a repetitive pattern of pedestals of a first working material over the semiconductor wafer, the repetitive pattern of pedestals having an initial pitch; depositing a layer of a second working material over the semiconductor wafer; vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing; etching away the repetitive pattern of pedestals of the first working material leaving the first sidewalls of the second working material formed on the semiconductor wafer; depositing a layer of the first working material over the wafer; vertically etching horizontal portions of the layer of the first working material to form second sidewalls of the first working material on inside surfaces of the first sidewalls and to form third sidewalls of the first working material on outside surfaces of the first sidewalls, the second sidewalls having a second width, the third sidewalls having a third width, the second sidewalls and the third sidewalls being spaced apart by a second spacing; etching away the first sidewalls leaving the second and third sidewalls of the first working material formed on the semiconductor wafer, the etched away first sidewalls forming a third spacing between the second and third sidewalls; wherein the first sidewalls have a first pitch of the first spacing and the first width, the first pitch of the first sidewalls less than the initial pitch of the repetitive pattern of pedestals; and wherein the second sidewalls have a second pitch of the second spacing and the second width, the second pitch of the second sidewalls less than the initial pitch of the repetitive pattern of pedestals.
Claim 35
Independent Claim
322 words
A method of forming a repetitive pattern of at least one semiconductive layer over a semiconductor wafer, the method comprising: forming a repetitive pattern of pedestals of a first working material over the semiconductor wafer, the repetitive pattern of pedestals having an initial pitch; depositing a layer of a second working material over the semiconductor wafer; vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing; etching away the repetitive pattern of pedestals of the first working material leaving the first sidewalls of the second working material formed on the semiconductor wafer; depositing a layer of the first working material over the wafer; vertically etching horizontal portions of the layer of the first working material to form second sidewalls of the first working material on inside surfaces of the first sidewalls and to form third sidewalls of the first working material on outside surfaces of the first sidewalls, the second sidewalls having a second width, the third sidewalls having a third width, the second sidewalls and the third sidewalls being spaced apart by a second spacing; etching away the first sidewalls leaving the second and third sidewalls of the first working material formed on the semiconductor wafer, the etched away first sidewalls forming a third spacing between the second and third sidewalls; wherein the first sidewalls have a first pitch of the first spacing and the first width, the first pitch of the first sidewalls less than the initial pitch of the repetitive pattern of pedestals; and wherein the second sidewalls have a second pitch of the second spacing and the second width, the second pitch of the second sidewalls less than the initial pitch of the repetitive pattern of pedestals.
Claim 36
Dependent Claim
40 words
The method of claim 29 , wherein, the third sidewalls have a third pitch of the third spacing and the third width, the third pitch of the third sidewalls less than the initial pitch of the repetitive pattern of pedestals.
Claim 37
Dependent Claim
28 words
The method of claim 29 , wherein, the vertically etching of horizontal portions of the layer of the first working material is preformed using a reactive ion etch.
Claim 38
Dependent Claim
20 words
The method of claim 29 , wherein, the etching away of the first sidewalls is preformed using a wet etch.
Claim 39
Dependent Claim
21 words
The method of claim 29 , wherein, the first working material and the second working material etch independently of each other.
Claim 40
Dependent Claim
23 words
The method of claim 29 , wherein, the depositing of the layer of the second working material is preformed using chemical vapor deposition.
Claim 41
Dependent Claim
62 words
The method of claim 29 , wherein the etched away repetitive pattern of pedestals of the first working material forms a second spacing of the first sidewalls and wherein the first sidewalls have a second pitch of the second spacing and the first width, the second pitch of the first sidewalls less than the initial pitch of the repetitive pattern of pedestals.
References Cited (Backward Citations)
US4021276A
Cited
US4920065A
Cited
US5554880A
Cited
US5932922A
Cited
US6103584A
Cited
US6083831A
Cited
US5825079A
Cited
US6107636A
Cited
US6277762B1
Cited
US5898982A
Cited
US6002574A
Cited
US5895273A
Cited
JPH1172631A
Cited
US6008140A
Cited
US20020045354A1
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-12-22 | 2007-06-23 | 2007-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-12-22 | 2011-06-23 | 2011-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-12-22 | 2015-06-23 | 2015-12-23 | $7700.00 | Window Closed / Lapsed |