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US6617647B2
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Insulated gate semiconductor device and method of manufacturing the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 2001-03-16
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Granted: 2003-09-09
•
Expires: 2021-03-16
Abstract
Abstract Dot-pattern-like impurity regions 104 are artificially and locally formed on a channel forming region 103. The impurity regions 104 restrain the expansion of a drain side depletion layer toward the channel forming region 103 to prevent the short channel effect. The impurity regions 104 allow a channel width W to be substantially fined, and the resultant narrow channel effect releases the lowering of a threshold value voltage which is caused by the short channel effect.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:39
CPC Classifications
H; H10; H10P; H10P10/00; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; B; B82; B82Y; B82Y10/00; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/106; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/80; H10D62/81; H10D62/815; H10D62/8181; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0167; H10D84/02; H10D84/03; H10D84/038; H10D84/40; H10D84/401; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 61
Claim 1
Independent Claim
146 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a plurality of impurity regions by adding impurity elements locally in said channel forming region, each of said impurity regions having a width smaller than the channel width; and forming a gate insulating film and a gate electrode over said channel forming region; wherein said impurity elements added to said impurity regions in said channel region shift an energy band width (Eg), wherein said impurity region are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction, and wherein each of said impurity regions has one conductivity opposite to that of the source and drain regions.
Claim 2
Independent Claim
146 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a plurality of impurity regions by adding impurity elements locally in said channel forming region, each of said impurity regions having a width smaller than the channel width; and forming a gate insulating film and a gate electrode over said channel forming region; wherein said impurity elements added to said impurity regions in said channel region shift an energy band width (Eg), wherein said impurity region are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction, and wherein each of said impurity regions has one conductivity opposite to that of the source and drain regions.
Claim 3
Dependent Claim
25 words
A method according to claim 1 , wherein regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
Claim 4
Dependent Claim
59 words
A method according to claim 1 , wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of Wpi/W=0.1 to 0.9, Wpa/W=0.1 to 0.9 and Wpi/Wpa={fraction (1/9)} to 9 are accomplished between W, Wpi and Wpa.
Claim 5
Dependent Claim
42 words
A method according to claim 1 , wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
Claim 6
Dependent Claim
25 words
A method according to claim 1 , wherein said impurity regions are arranged at intervals of 100 to 3000 Å in said channel forming region.
Claim 7
Dependent Claim
18 words
A method according to claim 1 , wherein said impurity elements are elements of group XIII or XV.
Claim 8
Dependent Claim
27 words
A method according to claim 7 , wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
Claim 9
Dependent Claim
16 words
A method according to claim 1 , wherein said impurity regions are in a dot pattern.
Claim 10
Dependent Claim
27 words
A method according to claim 1 , wherein a concentration of said impurity elements in said impurity regions is 1×10 17 to 1×10 20 atoms/cm 3 .
Claim 11
Independent Claim
158 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a gate insulating film and a gate electrode over said channel forming region; and locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form a plurality of impurity regions each of which pins a depletion layer that expands from said drain region toward said channel forming region and said source region, each of said impurity regions having a width smaller than the channel width, wherein said impurity region are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction, and wherein each of said impurity regions has one conductivity opposite to that of the source and drain regions.
Claim 12
Independent Claim
158 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a gate insulating film and a gate electrode over said channel forming region; and locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form a plurality of impurity regions each of which pins a depletion layer that expands from said drain region toward said channel forming region and said source region, each of said impurity regions having a width smaller than the channel width, wherein said impurity region are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction, and wherein each of said impurity regions has one conductivity opposite to that of the source and drain regions.
Claim 13
Dependent Claim
25 words
A method according to claim 10 , wherein regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
Claim 14
Dependent Claim
59 words
A method according to claim 10 , wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of Wpi/W=0.1 to 0.9, Wpa/W=0.1 to 0.9 and Wpi/Wpa={fraction (1/9)} to 9 are accomplished between W, Wpi and Wpa.
Claim 15
Dependent Claim
42 words
A method according to claim 10 , wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
Claim 16
Dependent Claim
25 words
A method according to claim 10 , wherein said impurity regions are arranged at intervals of 100 to 3000 Å in said channel forming region.
Claim 17
Dependent Claim
18 words
A method according to claim 10 , wherein said impurity elements are elements of group XIII or XV.
Claim 18
Dependent Claim
27 words
A method according to claim 15 , wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
Claim 19
Dependent Claim
16 words
A method according to claim 10 , wherein said impurity regions are in a dot pattern.
Claim 20
Dependent Claim
27 words
A method according to claim 10 , wherein a concentration of said impurity elements in said impurity regions is 1×10 17 to 1×10 20 atoms/cm 3 .
Claim 21
Independent Claim
161 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a gate insulating film and a gate electrode over said channel forming region; and locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form a plurality of impurity regions, each of said impurity regions having a width smaller than the channel width, wherein said impurity regions in said channel forming region are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction, and in order to control to a predetermined threshold value voltage and control a path through which the carriers move, and wherein each of said impurity regions has one conductivity opposite to that of the source and drain regions.
Claim 22
Independent Claim
161 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a gate insulating film and a gate electrode over said channel forming region; and locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form a plurality of impurity regions, each of said impurity regions having a width smaller than the channel width, wherein said impurity regions in said channel forming region are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction, and in order to control to a predetermined threshold value voltage and control a path through which the carriers move, and wherein each of said impurity regions has one conductivity opposite to that of the source and drain regions.
Claim 23
Dependent Claim
25 words
A method according to claim 19 , wherein regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
Claim 24
Dependent Claim
59 words
A method according to claim 19 , wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of Wpi/W=0.1 to 0.9, Wpa/W=0.1 to 0.9 and Wpi/Wpa={fraction (1/9)} to 9 are accomplished between W, Wpi and Wpa.
Claim 25
Dependent Claim
42 words
A method according to claim 19 , wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
Claim 26
Dependent Claim
25 words
A method according to claim 19 , wherein said impurity regions are arranged at intervals of 100 to 3000 Å in said channel forming region.
Claim 27
Dependent Claim
18 words
A method according to claim 19 , wherein said impurity elements are elements of group XIII or XV.
Claim 28
Dependent Claim
27 words
A method according to claim 24 , wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
Claim 29
Dependent Claim
16 words
A method according to claim 19 , wherein said impurity regions are in a dot pattern.
Claim 30
Dependent Claim
27 words
A method according to claim 19 , wherein a concentration of said impurity elements in said impurity regions is 1×10 17 to 1×10 20 atoms/cm 3 .
Claim 31
Independent Claim
124 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; and locally forming a plurality of impurity regions by addition of impurity elements that shift an energy band width (Eg) in said channel forming region; and forming a gate insulating film and a gate electrode formed over said channel forming region; wherein said impurity regions have an insulating property and arranged in a matrix form in a channel width direction and in a channel length direction; and wherein regions other than said impurity region in said channel forming region are not added with said impurity elements.
Claim 32
Independent Claim
124 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; and locally forming a plurality of impurity regions by addition of impurity elements that shift an energy band width (Eg) in said channel forming region; and forming a gate insulating film and a gate electrode formed over said channel forming region; wherein said impurity regions have an insulating property and arranged in a matrix form in a channel width direction and in a channel length direction; and wherein regions other than said impurity region in said channel forming region are not added with said impurity elements.
Claim 33
Dependent Claim
26 words
A method according to claim 28 , wherein a region other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
Claim 34
Dependent Claim
26 words
A method according to claim 28 , wherein said regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
Claim 35
Dependent Claim
59 words
A method according to claim 28 , wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of Wpi/W=0.1 to 0.9, Wpa/W=0.1 to 0.9 and Wpi/Wpa={fraction (1/9)} to 9 are accomplished between W, Wpi and Wpa.
Claim 36
Dependent Claim
42 words
A method according to claim 28 , wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
Claim 37
Dependent Claim
25 words
A method according to claim 28 , wherein said impurity regions are arranged at intervals of 100 to 3000 Å in said channel forming region.
Claim 38
Dependent Claim
18 words
A method according to claim 28 , wherein said impurity elements are elements of group XIII or XV.
Claim 39
Dependent Claim
27 words
A method according to claim 34 , wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
Claim 40
Dependent Claim
16 words
A method according to claim 28 , wherein said impurity regions are in a dot pattern.
Claim 41
Dependent Claim
27 words
A method according to claim 28 , wherein a concentration of said impurity elements in said impurity regions is 1×10 17 to 1×10 20 atoms/cm 3 .
Claim 42
Independent Claim
129 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a gate insulating film and a gate electrode over said channel forming region; and locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form a plurality of impurity regions which pin a depletion layer that expands from said drain region toward said channel forming region and said source region, wherein said impurity regions have an insulating property and are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction.
Claim 43
Independent Claim
129 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a gate insulating film and a gate electrode over said channel forming region; and locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form a plurality of impurity regions which pin a depletion layer that expands from said drain region toward said channel forming region and said source region, wherein said impurity regions have an insulating property and are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction.
Claim 44
Dependent Claim
25 words
A method according to claim 38 , wherein regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
Claim 45
Dependent Claim
59 words
A method according to claim 38 , wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of Wpi/W=0.1 to 0.9, Wpa/W=0.1 to 0.9 and Wpi/Wpa={fraction (1/9)} to 9 are accomplished between W, Wpi and Wpa.
Claim 46
Dependent Claim
42 words
A method according to claim 38 , wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
Claim 47
Dependent Claim
25 words
A method according to claim 38 , wherein said impurity regions are arranged at intervals of 100 to 3000 □ in said channel forming region.
Claim 48
Dependent Claim
18 words
A method according to claim 38 , wherein said impurity elements are elements of group XIII or XV.
Claim 49
Dependent Claim
27 words
A method according to claim 43 , wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
Claim 50
Dependent Claim
16 words
A method according to claim 38 , wherein said impurity regions are in a dot pattern.
Claim 51
Dependent Claim
27 words
A method according to claim 38 , wherein a concentration of said impurity elements in said impurity regions is 1×10 17 to 1×10 20 atoms/cm 3 .
Claim 52
Independent Claim
126 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a gate insulating film and a gate electrode over said channel forming region; and locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form a plurality of impurity regions having an insulating property, wherein said impurity region are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction in order to control a predetermined threshold value voltage and control a path through which the carriers move.
Claim 53
Independent Claim
126 words
A method of manufacturing a semiconductor device, said method comprising: forming a source region, a drain region and a channel forming region having a channel width and a channel length in a crystalline semiconductor film over a substrate; forming a gate insulating film and a gate electrode over said channel forming region; and locally adding impurity elements that shift an energy band width (Eg) to said channel forming region, in order to form a plurality of impurity regions having an insulating property, wherein said impurity region are arranged in a matrix form in the channel forming regions in a channel width direction and in a channel length direction in order to control a predetermined threshold value voltage and control a path through which the carriers move.
Claim 54
Dependent Claim
25 words
A method according to claim 47 , wherein regions other than said impurity regions within said channel forming region is intrinsic or substantially intrinsic regions.
Claim 55
Dependent Claim
59 words
A method according to claim 47 , wherein assuming that rates of said impurity regions and a width between said impurity regions with respect to a width W of said channel forming region are Wpi and Wpa, respectively, relational expressions of Wpi/W=0.1 to 0.9, Wpa/W=0.1 to 0.9 and Wpi/Wpa={fraction (1/9)} to 9 are accomplished between W, Wpi and Wpa.
Claim 56
Dependent Claim
42 words
A method according to claim 47 , wherein at least one section perpendicular to a channel direction of said channel forming region is substantially regarded as an assembly of a plurality of channel forming regions which are sectioned by said impurity regions.
Claim 57
Dependent Claim
25 words
A method according to claim 47 , wherein said impurity regions are arranged at intervals of 100 to 3000 □ in said channel forming region.
Claim 58
Dependent Claim
18 words
A method according to claim 47 , wherein said impurity elements are elements of group XIII or XV.
Claim 59
Dependent Claim
27 words
A method according to claim 52 , wherein the elements of group XIII are boron, and the elements of group XV are one of phosphorus and arsenic.
Claim 60
Dependent Claim
16 words
A method according to claim 47 , wherein said impurity regions are in a dot pattern.
Claim 61
Dependent Claim
27 words
A method according to claim 47 , wherein a concentration of said impurity elements in said impurity regions is 1×10 17 to 1×10 20 atoms/cm 3 .
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