Abstract Disclosed is a method for SOI device, and particularly to a method for fabricating a full depletion type SOI device capable of minimizing a change in a threshold voltage of transistor according to a change in a thickness of semiconductor layer. The disclosed method for fabricating a full depletion type SOI device comprises: preparing a SOI wafer having a stack structure consisted of a base substrate, a buried oxide film, and a semiconductor layer, forming a dummy gate on an active region of the semiconductor layer, forming source/drain regions on an active region of the semiconductor layer at both sides of the dummy gate, depositing an insulating layer over the dummy gate and the semiconductor layer, polishing the insulating film using the dummy gate as a polishing stop layer, removing the dummy gate, etching a predetermined thickness of semiconductor layer exposed by removing the dummy gate, growing a delta doped silicon film and a silicon film doped in a low concentration on a remaining part of the semiconductor layer, the total thickness thereof being equal to that of the source/drain regions, and forming a gate having a gate oxide film on the silicon film doped in a low concentration.
A method for fabricating a full depletion type SOI device comprising the steps of: providing a SOI wafer having a stack structure consisting of a base substrate, a buried oxide film, and a semiconductor layer; forming a dummy gate on an active region of the semiconductor layer, the dummy gate having a first side and a second side; forming a source region and a drain region on the active region of the semiconductor layer at the first side and the second side of the dummy gate, respectively; forming an insulating film over the dummy gate and the semiconductor layer; polishing the insulating film using the dummy gate as a polishing stop layer; removing the dummy gate; etching a predetermined thickness of semiconductor layer exposed by the removal of the dummy gate; growing a delta doped silicon film and a silicon film doped in a low concentration on a remaining part of the semiconductor layer, having a total thickness thereof equal to both a thickness of the source region and a thickness of the drain region; and forming a gate having a gate oxide film on the silicon film doped in a low concentration.
Claim 2
Independent Claim
193 words
A method for fabricating a full depletion type SOI device comprising the steps of: providing a SOI wafer having a stack structure consisting of a base substrate, a buried oxide film, and a semiconductor layer; forming a dummy gate on an active region of the semiconductor layer, the dummy gate having a first side and a second side; forming a source region and a drain region on the active region of the semiconductor layer at the first side and the second side of the dummy gate, respectively; forming an insulating film over the dummy gate and the semiconductor layer; polishing the insulating film using the dummy gate as a polishing stop layer; removing the dummy gate; etching a predetermined thickness of semiconductor layer exposed by the removal of the dummy gate; growing a delta doped silicon film and a silicon film doped in a low concentration on a remaining part of the semiconductor layer, having a total thickness thereof equal to both a thickness of the source region and a thickness of the drain region; and forming a gate having a gate oxide film on the silicon film doped in a low concentration.
Claim 3
Dependent Claim
20 words
The method according to claim 1 , wherein the gate oxide film is formed as a low temperature oxide film.
Claim 4
Dependent Claim
25 words
The method according to claim 2 , wherein the low temperature oxide film is Al 2 O 3 film or Ta 2 O 5 film.