Patent US6613604B2 successfully refreshed from Google Patents.
US6613604B2
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Method for making small pore for use in programmable resistance memory element
Assignee: BAE Systems Information and Electronic Systems Integration Inc
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Filing: 2001-09-19
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Granted: 2003-09-02
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Expires: 2021-09-19
Abstract
Abstract A method for making a small pore. The defined pore is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.
Inventors
- 👤 Jon Maimon
- 👤 Patrick Klersy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:44
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/011; H10N70/061; H10N70/068; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/828; H10N70/841; H10N70/8413; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
127 words
A method of fabricating a programmable resistance memory element, comprising: providing a layer of a first material; forming a layer of a second material over said layer of said first material; forming a layer of a third material over said layer of said second material; forming an opening in said third material to expose said second material but without removing substantially any of said of said second material; forming a sidewall spacer of a fourth material on a sidewall surface of said opening of said third material; forming an opening in said second material to expose said first material; and forming a layer of a programmable resistance material in said opening of said second material, said programmable resistance material being in direct contact with said first material.
Claim 2
Independent Claim
127 words
A method of fabricating a programmable resistance memory element, comprising: providing a layer of a first material; forming a layer of a second material over said layer of said first material; forming a layer of a third material over said layer of said second material; forming an opening in said third material to expose said second material but without removing substantially any of said of said second material; forming a sidewall spacer of a fourth material on a sidewall surface of said opening of said third material; forming an opening in said second material to expose said first material; and forming a layer of a programmable resistance material in said opening of said second material, said programmable resistance material being in direct contact with said first material.
Claim 3
Dependent Claim
14 words
The method of claim 1 , wherein said first material is a conductive material.
Claim 4
Dependent Claim
13 words
The method of claim 1 , wherein second material is a dielectric material.
Claim 5
Dependent Claim
18 words
The method of claim 1 , wherein said third material is a dielectric material or a polysilicon material.
Claim 6
Dependent Claim
18 words
The method of claim 1 , wherein said fourth material is a dielectric material or a polysilicon material.
Claim 7
Dependent Claim
17 words
The method of claim 1 , wherein said third material is the same as said fourth material.
Claim 8
Dependent Claim
16 words
The method of claim 1 , wherein said opening in said second material is a hole.
Claim 9
Dependent Claim
15 words
The method of claim 1 , wherein said programmable resistance material is a phase-change material.
Claim 10
Dependent Claim
15 words
The method of claim 1 , wherein said programmable resistance material comprises a chalcogen element.
Claim 11
Dependent Claim
21 words
The method of claim 1 , further comprising removing said fourth material before forming said layer of said programmable resistance material.
Claim 12
Dependent Claim
25 words
The method of claim 1 , further comprising removing said fourth material and said third material before forming said layer of said programmable resistance material.
Claim 13
Dependent Claim
29 words
The method of claim 1 , further comprising forming a layer of a conductive material over said programmable resistance material after forming said layer of said programmable resistance material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-09-01 | 2007-03-03 | 2007-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-09-01 | 2011-03-03 | 2011-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-09-01 | 2015-03-03 | 2015-09-02 | $7700.00 | Window Closed / Lapsed |