US6593213B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Synthesis of layers, coatings or films using electrostatic fields
Assignee: HelioVolt Corp
•
Filing: 2001-09-20
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Granted: 2003-07-15
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Expires: 2021-09-20
Abstract
Abstract Systems and methods are described for synthesis of films, coatings or layers using electrostatic fields. A method includes applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.
Inventors
- 👤 Billy J. Stanbery
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:25
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/126; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
97 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate where the first precursor layer includes a first chemical reactant, the second precursor layer includes a second chemical reactant, and the composition layer includes a chemical product yielded by a chemical reaction between the first chemical reactant and the second chemical reactant.
Claim 2
Independent Claim
97 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate where the first precursor layer includes a first chemical reactant, the second precursor layer includes a second chemical reactant, and the composition layer includes a chemical product yielded by a chemical reaction between the first chemical reactant and the second chemical reactant.
Claim 3
Dependent Claim
26 words
A method of claim 1 , wherein a first chemical reactant includes a first multinary compound and the second chemical reactant includes a second multinary compound.
Claim 4
Dependent Claim
22 words
The method of claim 1 , wherein the electrostatic field is sufficient change a transport rate of at least one ionic species.
Claim 5
Independent Claim
61 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate further comprising reversing the electrostatic field.
Claim 6
Independent Claim
61 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate further comprising reversing the electrostatic field.
Claim 7
Independent Claim
63 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the electrostatic field modifies a reaction trajectory.
Claim 8
Independent Claim
63 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the electrostatic field modifies a reaction trajectory.
Claim 9
Independent Claim
74 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the electrostatic filed is sufficient to generate a pressure between the first precursor and the second precursor layer.
Claim 10
Independent Claim
74 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the electrostatic filed is sufficient to generate a pressure between the first precursor and the second precursor layer.
Claim 11
Dependent Claim
33 words
The method of claim 6 wherein the pressure is sufficient to substantially prevent escape of vapor from at least one of the first precursor layer, the second precursor layer and the composition layer.
Claim 12
Independent Claim
76 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein at least a portion of the second precursor layer melts and substantially no portion of the first precursor layer melts.
Claim 13
Independent Claim
76 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein at least a portion of the second precursor layer melts and substantially no portion of the first precursor layer melts.
Claim 14
Independent Claim
62 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the first substrate includes a tool.
Claim 15
Independent Claim
62 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the first substrate includes a tool.
Claim 16
Dependent Claim
20 words
The method of claim 9 , wherein a release layer is located between the tool and the first precursor layer.
Claim 17
Dependent Claim
17 words
The method of claim 9 , further comprising coupling another precursor layer to the tool after moving.
Claim 18
Dependent Claim
27 words
The method of claim 10 , wherein the release layer includes at least one fluoride selected from the group consisting of CaF 2 and SrF 2 .
Claim 19
Independent Claim
70 words
A method, comprising: applying an electronic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein an electrode layer is located between the second precursor layer and the second substrate.
Claim 20
Independent Claim
70 words
A method, comprising: applying an electronic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein an electrode layer is located between the second precursor layer and the second substrate.
Claim 21
Dependent Claim
24 words
The method of claim 13 , wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.
Claim 22
Independent Claim
64 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the composition layer includes copper, indium and selenium.
Claim 23
Independent Claim
64 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein the composition layer includes copper, indium and selenium.
Claim 24
Dependent Claim
28 words
The method of claim 15 , further comprising controlling the temperature of the second precursor layer within a range of from approximately 520° C. to approximately 635° C.
Claim 25
Dependent Claim
27 words
The method of claim 13 , wherein the first precursor layer includes (In,Ga) y (S,Se) 1-y and the second precursor layer includes Cu x Se 1-x .
Claim 26
Independent Claim
67 words
A method, comprising: applying electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a template is located between the first precursor layer and the first substrate.
Claim 27
Independent Claim
67 words
A method, comprising: applying electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a template is located between the first precursor layer and the first substrate.
Claim 28
Independent Claim
69 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a template is located between the second precursor layer and the second substrate.
Claim 29
Independent Claim
69 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a template is located between the second precursor layer and the second substrate.
Claim 30
Independent Claim
69 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a surfactant is located between the first precursor layer and the first substrate.
Claim 31
Independent Claim
69 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a surfactant is located between the first precursor layer and the first substrate.
Claim 32
Independent Claim
68 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a surfactant is located between the first precursor and the second precursor.
Claim 33
Independent Claim
68 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a surfactant is located between the first precursor and the second precursor.
Claim 34
Independent Claim
69 words
A method, comprising: applying electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a adhesion layer is located between the first precursor layer and the first substrate.
Claim 35
Independent Claim
69 words
A method, comprising: applying electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a adhesion layer is located between the first precursor layer and the first substrate.
Claim 36
Independent Claim
70 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein an adhesion layer is located between the second precursor layer and the second substrate.
Claim 37
Independent Claim
70 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein an adhesion layer is located between the second precursor layer and the second substrate.
Claim 38
Independent Claim
71 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.
Claim 39
Independent Claim
71 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.
Claim 40
Independent Claim
71 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.
Claim 41
Independent Claim
71 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.
Claim 42
Independent Claim
65 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate further comprising depositing a buffer layer on the composition layer.
Claim 43
Independent Claim
65 words
A method, comprising: applying an electrostatic field across a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate further comprising depositing a buffer layer on the composition layer.
Claim 44
Dependent Claim
16 words
The method of claim 26 , further comprising deposition a window layer on the buffer layer.
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