Patent US6590252B2 successfully refreshed from Google Patents.
US6590252B2
Expired / Lapsed
US
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Semiconductor device with oxygen diffusion barrier layer termed from composite nitride
Assignee: Pannova Semic LLC
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Filing: 2001-08-06
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Granted: 2003-07-08
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Expires: 2021-08-06
Abstract
Abstract An impurity diffusion layer serving as the source or the drain of a transistor is formed in a semiconductor substrate, and a protection insulating film is formed so as to cover the transistor. A capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode are successively formed on the protection insulating film. A plug for electrically connecting the impurity diffusion layer of the transistor to the capacitor lower electrode is buried in the protection insulating film. An oxygen barrier layer is formed between the plug and the capacitor lower electrode. The oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.
Inventors
- 👤 Toshie Kutsunai
- 👤 Shinichiro Hayashi
- 👤 Takumi Mikawa
- 👤 Yuji Judai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:59
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
128 words
A semiconductor device comprising: an impurity diffusion layer serving as a source or a drain of a transistor formed in a semiconductor substrate; a protection insulating film covering said transistor; a capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode successively formed on said protection insulating film; a plug buried in said protection insulating film for electrically connecting said impurity diffusion layer of said transistor to said capacitor lower electrode; and an oxygen barrier layer formed between said plug and said capacitor lower electrode, wherein said oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride particle having a conducting property and a second nitride particle having an insulating property.
Claim 2
Dependent Claim
128 words
A semiconductor device comprising: an impurity diffusion layer serving as a source or a drain of a transistor formed in a semiconductor substrate; a protection insulating film covering said transistor; a capacitor lower electrode, a capacitor dielectric film of an oxide dielectric film and a capacitor upper electrode successively formed on said protection insulating film; a plug buried in said protection insulating film for electrically connecting said impurity diffusion layer of said transistor to said capacitor lower electrode; and an oxygen barrier layer formed between said plug and said capacitor lower electrode, wherein said oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride particle having a conducting property and a second nitride particle having an insulating property.
Claim 3
Dependent Claim
44 words
The semiconductor device of claim 1 , wherein said first nitride is a nitride of at least one of titanium, tantalum, cobalt, copper and gallium, and said second nitride is a nitride of at least one of aluminum, silicon, chromium, iron, zirconium and hafnium.
Claim 4
Dependent Claim
39 words
The semiconductor device of claim 1 , further comprising an upper oxygen barrier layer formed between said oxygen barrier layer and said capacitor lower electrode and made from a metal that has a conducting property when it is oxidized.
Claim 5
Dependent Claim
23 words
The semiconductor device of claim 3 , wherein said metal is at least one of iridium, ruthenium, rhenium, osmium, rhodium, platinum and gold.
Claim 6
Dependent Claim
35 words
The semiconductor device of claim 1 , further comprising an upper oxygen barrier layer formed between said oxygen barrier layer and said capacitor lower electrode and made from a metal oxide having a conducting property.
Claim 7
Dependent Claim
32 words
The semiconductor device of claim 5 , wherein said metal oxide is at least one of an iridium oxide, a ruthenium oxide, a rhenium oxide, an osmium oxide and a rhodium oxide.
Claim 8
Dependent Claim
49 words
The semiconductor device of claim 1 , further comprising an upper oxygen barrier layer of a multi-layer structure composed of a first metal layer of a metal that has a conducting property when it is oxidized and a second metal layer of a metal oxide having a conducting property.
Claim 9
Dependent Claim
188 words
A semiconductor device comprising: an impurity diffusion layer serving as a source or a drain of a transistor formed in a semiconductor substrate; a first protection insulating film covering said transistor; a plug buried in said first protection insulating film having a lower end electrically connected to said impurity diffusion layer of said transistor; an oxygen barrier layer formed on said first protection insulating film and having a lower face in contact with an upper end of said plug; a capacitor lower electrode formed on said oxygen barrier layer; a second protection insulating film formed on said first protection insulating film to cover peripheral faces of said oxygen barrier layer and said capacitor lower electrode and having an upper face placed at substantially the same level as an upper face of said capacitor lower electrode; a capacitor dielectric film made from an oxide dielectric film formed on said capacitor lower electrode and said second protection insulating film, having a plane shape larger than a plane shape of said capacitor lower electrode, and having an entirely flat surface; and a capacitor upper electrode formed on said capacitor dielectric film.
Claim 10
Dependent Claim
188 words
A semiconductor device comprising: an impurity diffusion layer serving as a source or a drain of a transistor formed in a semiconductor substrate; a first protection insulating film covering said transistor; a plug buried in said first protection insulating film having a lower end electrically connected to said impurity diffusion layer of said transistor; an oxygen barrier layer formed on said first protection insulating film and having a lower face in contact with an upper end of said plug; a capacitor lower electrode formed on said oxygen barrier layer; a second protection insulating film formed on said first protection insulating film to cover peripheral faces of said oxygen barrier layer and said capacitor lower electrode and having an upper face placed at substantially the same level as an upper face of said capacitor lower electrode; a capacitor dielectric film made from an oxide dielectric film formed on said capacitor lower electrode and said second protection insulating film, having a plane shape larger than a plane shape of said capacitor lower electrode, and having an entirely flat surface; and a capacitor upper electrode formed on said capacitor dielectric film.
Claim 11
Dependent Claim
41 words
The semiconductor device of claim 8 , wherein said oxygen barrier layer is made from a composite nitride that is a mixture or an alloy of a first nitride having a conducting property and a second nitride having an insulating property.
Claim 12
Dependent Claim
39 words
The semiconductor device of claim 8 , further comprising an upper oxygen barrier layer formed between said oxygen barrier layer and said capacitor lower electrode and made from a metal that has a conducting property when it is oxidized.
Claim 13
Dependent Claim
35 words
The semiconductor device of claim 8 , further comprising an upper oxygen barrier layer formed between said oxygen barrier layer and said capacitor lower electrode and made from a metal oxide having a conducting property.
References Cited (Backward Citations)
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