US6589847B1 — Tilted counter-doped implant to sharpen halo prof…

Claim 1

Independent Claim 176 words

A method of forming source/drain regions in a semiconductor device, comprising: forming a gate electrode above a semiconducting substrate, said substrate being doped with a first type of dopant material; forming halo implant regions in said substrate adjacent said gate electrode by performing at least the following steps: performing a first angled implant process at an angle greater than zero but less than approximately 60 degrees using a dopant material that is of a type opposite to said first type of dopant material to form a first halo implant region comprised of said opposite type of dopant material in said substrate; performing a second angled implant process at an angle greater than zero but less than approximately 60 degrees using a dopant material that is of the same type as said first type of dopant material to form a second halo implant region comprised of said same type of dopant material in said substrate within said first halo implant region; and performing at least one additional implantation process to further form source/drain regions for the device.

Claim 2

Independent Claim 176 words

A method of forming source/drain regions in a semiconductor device, comprising: forming a gate electrode above a semiconducting substrate, said substrate being doped with a first type of dopant material; forming halo implant regions in said substrate adjacent said gate electrode by performing at least the following steps: performing a first angled implant process at an angle greater than zero but less than approximately 60 degrees using a dopant material that is of a type opposite to said first type of dopant material to form a first halo implant region comprised of said opposite type of dopant material in said substrate; performing a second angled implant process at an angle greater than zero but less than approximately 60 degrees using a dopant material that is of the same type as said first type of dopant material to form a second halo implant region comprised of said same type of dopant material in said substrate within said first halo implant region; and performing at least one additional implantation process to further form source/drain regions for the device.

Claim 3

Dependent Claim 41 words

The method of claim 1 , wherein said substrate is doped with a P-type dopant material, said first angled implant process is performed using an N-type dopant material, and said second angled implant process is performed using a P-type dopant material.

Claim 4

Dependent Claim 70 words

The method of claim 1 , wherein said substrate is doped with a P-type dopant material comprised of at least one of boron and boron difluoride, said first angled implant process is performed using an N-type dopant material comprised of at least one of arsenic and phosphorous, and said second angled implant process is performed using a P-type dopant material comprised of at least one of boron and boron difluoride.

Claim 5

Dependent Claim 41 words

The method of claim 1 , wherein said substrate is doped with an N-type dopant material, said first angled implant process is performed using a P-type dopant material, and said second angled implant process is performed using an N-type dopant material.

Claim 6

Dependent Claim 69 words

The method of claim 1 , wherein said substrate is doped with an N-type dopant material comprised of at least one of arsenic and phosphorous, said first angled implant process is performed using a P-type dopant material comprised of at least one of boron and boron difluoride, and said second angled implant process is performed using an N-type dopant material comprised of at least one of arsenic and phosphorous.

Claim 7

Dependent Claim 62 words

The method of claim 1 , wherein performing a first angled implant process using a dopant material that is of a type opposite to said first type of dopant material comprises performing a first angled implant process at an angle ranging from approximately 15-60 degrees using a dopant material that is of a type opposite to said first type of dopant material.

Claim 8

Dependent Claim 62 words

The method of claim 1 , wherein performing a second angled implant process using a dopant material that is of the same type as said first type of dopant material comprises performing a second angled implant process at an angle ranging from approximately 15-60 degrees using a dopant material that is of the same type as said first type of dopant material.

Claim 9

Dependent Claim 70 words

The method of claim 1 , wherein performing a first angled implant process using a dopant material that is of a type opposite to said first type of dopant material comprises performing a first angled implant process using a dopant material that is of a type opposite to said first type of dopant material and implanted at a concentration level of approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 10

Dependent Claim 70 words

The method of claim 1 , wherein performing a second angled implant process using a dopant material that is of the same type as said first type of dopant material comprises performing a second angled implant process using a dopant material that is of the same type as said first type of dopant material and implanted at a concentration level of approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 11

Dependent Claim 79 words

The method of claim 1 , wherein performing a first angled implant process using a dopant material that is of a type opposite to said first type of dopant material comprises performing a first angled implant process using a dopant material that is of a type opposite to said first type of dopant material and implanted at a concentration level of approximately 1×10 12 to 5×10 13 ions/cm 2 and at an energy level ranging from approximately 5-40 keV.

Claim 12

Dependent Claim 49 words

The method of claim 1 , wherein performing at least one additional implantation process to further form source/drain regions for the device comprises: performing a third implant process to form source/drain extensions for the device; and performing a fourth implant process to further form source/drain regions in said device.

Claim 13

Dependent Claim 77 words

The method of claim 1 , wherein performing at least one additional implantation process to further form source/drain regions for the device comprises: performing a third implant process at a dopant concentration ranging from approximately 1×10 14 to 5×10 15 ions/cm 2 to form source/drain extensions for the device; and performing a fourth implant process at a dopant concentration ranging from approximately 5×10 14 to 5×10 15 ions/cm 2 to further form source/drain regions in said device.

Claim 14

Dependent Claim 29 words

The method of claim 1 , further comprising performing at least one anneal process to activate the dopant material implanted during at least said first and second implant processes.

Claim 15

Dependent Claim 36 words

The method of claim 1 , further comprising forming a process layer above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 16

Dependent Claim 41 words

The method of claim 1 , further comprising thermally growing a process layer comprised of silicon dioxide above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 17

Dependent Claim 70 words

The method of claim 2 , wherein said substrate is doped with a P-type dopant material comprised of at least one of boron and boron difluoride, said first angled implant process is performed using an N-type dopant material comprised of at least one of arsenic and phosphorous, and said second angled implant process is performed using a P-type dopant material comprised of at least one of boron and boron difluoride.

Claim 18

Dependent Claim 38 words

The method of claim 2 , wherein performing a first angled implant process using an N-type dopant material comprises performing a first angled implant process at an angle ranging from approximately 15-60 degrees using an N-type dopant material.

Claim 19

Dependent Claim 38 words

The method of claim 2 , wherein performing a second angled implant process using a P-type dopant material comprises performing a second angled implant process at an angle ranging from approximately 15-60 degrees using a P-type dopant material.

Claim 20

Dependent Claim 43 words

The method of claim 2 , wherein performing a first angled implant process using an N-type dopant comprises performing a first angled implant process using an N,type dopant material at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 21

Dependent Claim 44 words

The method of claim 2 , wherein performing a second angled implant process using a P-type dopant material comprises performing a second angled implant process using a P-type dopant material at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 22

Dependent Claim 55 words

The method of claim 2 , wherein performing a first angled implant process using an N-type dopant comprises performing a first angled implant process using an N-type dopant material comprised of arsenic at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 and at an energy level ranging from approximately 5-70 keV.

Claim 23

Dependent Claim 56 words

The method of claim 21 , wherein performing a second angled implant process using a P-type dopant material comprises performing a second angled implant process using a P-type dopant material comprised of boron at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 and at an energy level ranging from approximately 2-70 keV.

Claim 24

Dependent Claim 49 words

The method of claim 2 , wherein performing at least one additional implantation process to further form source/drain regions for the device comprises: performing a third implant process to form source/drain extensions for the device; and performing a fourth implant process to further form source/drain regions in said device.

Claim 25

Dependent Claim 77 words

The method of claim 2 , wherein performing at least one additional implantation process to further form source/drain regions for the device comprises: performing a third implant process at a dopant concentration ranging from approximately 1×10 14 to 5×10 15 ions/cm 2 to form source/drain extensions for the device; and performing a fourth implant process at a dopant concentration ranging from approximately 5×10 14 to 5×10 15 ions/cm 2 to further form source/drain regions in said device.

Claim 26

Dependent Claim 29 words

The method of claim 2 , further comprising performing at least one anneal process to activate the dopant material implanted during at least said first and second implant processes.

Claim 27

Dependent Claim 36 words

The method of claim 2 , further comprising forming a process layer above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 28

Dependent Claim 41 words

The method of claim 2 , further comprising thermally growing a process layer comprised of silicon dioxide above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 29

Dependent Claim 69 words

The method of claim 4 , wherein said substrate is doped with an N-type dopant material comprised of at least one of arsenic and phosphorous, said first angled implant process is performed using a P-type dopant material comprised of at least one of boron and boron difluoride, and said second angled implant process is performed using an N-type dopant material comprised of at least one of arsenic and phosphorous.

Claim 30

Dependent Claim 38 words

The method of claim 4 , wherein performing a first angled implant process using a P-type dopant material comprises performing a first angled implant process at an angle ranging from approximately 15-60 degrees using a P-type dopant material.

Claim 31

Dependent Claim 37 words

The method of claim 4 , wherein performing a second angled implant process using an N-type dopant material comprises performing a second angled implant process at an angle from approximately 15-60 degrees using an N-type dopant material.

Claim 32

Dependent Claim 44 words

The method of claim 4 , wherein performing a first angled implant process using a P-type dopant material comprises performing a first angled implant process using a P-type dopant material at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 33

Dependent Claim 44 words

The method of claim 4 , wherein performing a second angled implant process using an N-type dopant material comprises performing a second angled implant process using an N-type dopant material at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 34

Dependent Claim 56 words

The method of claim 4 , wherein performing a first angled implant process using a P-type dopant material comprises performing a first angled implant process using a P-type dopant material comprised of boron at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 and at an energy level ranging from approximately 1.5-5.9 keV.

Claim 35

Dependent Claim 56 words

The method of claim 4 , wherein performing a second angled implant process using an N-type dopant material comprises performing a second angled implant process using an N-type dopant material comprised of arsenic at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 and at an energy level ranging from approximately 5-70 kev.

Claim 36

Dependent Claim 49 words

The method of claim 4 , wherein performing at least one additional implantation process to further form source/drain regions for the device comprises: performing a third implant process to form source/drain extensions for the device; and performing a fourth implant process to further form source/drain regions in said device.

Claim 37

Dependent Claim 77 words

The method of claim 4 , wherein performing at least one additional implantation process to further form source/drain regions for the device comprises: performing a third implant process at a dopant concentration ranging from approximately 1×10 14 to 5×10 15 ions/cm 2 to form source/drain extensions for; the device; and performing a fourth implant process at a dopant concentration ranging from approximately 5×10 14 to 5×10 15 ions/cm 2 to further form source/drain regions in said device.

Claim 38

Dependent Claim 29 words

The method of claim 4 , further comprising performing at least one anneal process to activate the dopant material implanted during at least said first and second implant processes.

Claim 39

Dependent Claim 36 words

The method of claim 4 , further comprising forming a process layer above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 40

Dependent Claim 41 words

The method of claim 4 , further comprising thermally growing a process layer comprised of silicon dioxide above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 41

Independent Claim 165 words

A method of forming source/drain regions in an NMOS semiconductor device, comprising: forming a gate electrode above a semiconducting substrate, said substrate being doped with at least one of boron and boron difluoride; forming halo implant regions in said substrate adjacent said gate electrode by performing at least the following steps: performing a first angled implant process at an angle greater than zero but less than approximately 60 degrees using at least one of arsenic and phosphorous to form a first halo implant region comprised of at least one of arsenic and phosphorous in said substrate; performing a second angled implant process at an angle greater than zero but less than approximately 60 degrees using at least one of boron and boron difluoride to form a second halo implant region comprised of at least one of boron and boron difluoride in said substrate within said first halo implant region; and performing at least one additional implantation process to further form source/drain regions for the device.

Claim 42

Independent Claim 165 words

A method of forming source/drain regions in an NMOS semiconductor device, comprising: forming a gate electrode above a semiconducting substrate, said substrate being doped with at least one of boron and boron difluoride; forming halo implant regions in said substrate adjacent said gate electrode by performing at least the following steps: performing a first angled implant process at an angle greater than zero but less than approximately 60 degrees using at least one of arsenic and phosphorous to form a first halo implant region comprised of at least one of arsenic and phosphorous in said substrate; performing a second angled implant process at an angle greater than zero but less than approximately 60 degrees using at least one of boron and boron difluoride to form a second halo implant region comprised of at least one of boron and boron difluoride in said substrate within said first halo implant region; and performing at least one additional implantation process to further form source/drain regions for the device.

Claim 43

Dependent Claim 22 words

The method of claim 40 , wherein said first angled implant process is performed at an angle ranging from approximately 15-60 degrees.

Claim 44

Dependent Claim 22 words

The method of claim 40 , wherein said second angled implant process is performed at an angle ranging from approximately 15-60 degrees.

Claim 45

Dependent Claim 40 words

The method of claim 40 , wherein said first angled implant process is performed at an angle greater than zero but less than 60 degrees and at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 46

Dependent Claim 40 words

The method of claim 40 , wherein said second angled implant process is performed at an angle greater than zero but less than 45 degrees and at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 47

Dependent Claim 49 words

The method of claim 40 , wherein performing at least one additional implantation process to further form source/drain regions for the device comprises: performing a third implant process to form source/drain extensions for the device; and performing a fourth implant process to further form source/drain regions in said device.

Claim 48

Dependent Claim 76 words

The method of claim 40 , wherein performing at least one additional implantation process to further form source/drain regions for the device comprises: performing a third implant process at a dopant concentration ranging from approximately 1×10 14 to 5×10 15 ions/cm 2 to form source/drain extensions for the device; and performing a fourth implant process at a dopant concentration ranging from approximately 5×10 14 to 5×10 15 ions/cm to further form source/drain regions, in said device.

Claim 49

Dependent Claim 29 words

The method of claim 40 , further comprising performing at least one anneal process to activate the dopant material implanted during at least said first and second implant processes.

Claim 50

Dependent Claim 36 words

The method of claim 40 , further comprising forming a process layer above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 51

Dependent Claim 41 words

The method of claim 40 , further comprising thermally growing a process layer comprised of silicon dioxide above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 52

Independent Claim 164 words

A method of forming source/drain regions in a PMOS semiconductor device, comprising: forming a gate electrode above a semiconducting substrate, said substrate being doped with at least one of arsenic and phosphorous; forming halo implant regions in said substrate adjacent said gate electrode by performing at least the following steps: performing a first angled implant process at an angle greater than zero but less than approximately 60 degrees using at least one of boron and boron difluoride to form a first halo implant region comprised of at least one of boron and boron difluoride in said substrate; performing a second angled implant process at an angle greater than zero but less than approximately 60 degrees using at least one of arsenic and phosphorous to form a second halo implant region comprised of at least one of arsenic and phosphorous in said substrate within said first implant doped region; and performing at least one additional implantation process to further form source/drain regions for the device.

Claim 53

Independent Claim 164 words

A method of forming source/drain regions in a PMOS semiconductor device, comprising: forming a gate electrode above a semiconducting substrate, said substrate being doped with at least one of arsenic and phosphorous; forming halo implant regions in said substrate adjacent said gate electrode by performing at least the following steps: performing a first angled implant process at an angle greater than zero but less than approximately 60 degrees using at least one of boron and boron difluoride to form a first halo implant region comprised of at least one of boron and boron difluoride in said substrate; performing a second angled implant process at an angle greater than zero but less than approximately 60 degrees using at least one of arsenic and phosphorous to form a second halo implant region comprised of at least one of arsenic and phosphorous in said substrate within said first implant doped region; and performing at least one additional implantation process to further form source/drain regions for the device.

Claim 54

Dependent Claim 22 words

The method of claim 50 , wherein said first angled implant process is performed at an angle ranging from approximately 15-60 degrees.

Claim 55

Dependent Claim 22 words

The method of claim 50 , wherein said second angled implant process is performed at an angle ranging from approximately 15-60 degrees.

Claim 56

Dependent Claim 40 words

The method of claim 50 , wherein said first angled implant process is performed at an angle greater than zero but less than 60 degrees and at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 57

Dependent Claim 40 words

The method of claim 50 , wherein said second angled implant process is performed at an angle greater than zero but less than 45 degrees and at a concentration ranging from approximately 1×10 12 to 5×10 13 ions/cm 2 .

Claim 58

Dependent Claim 49 words

The method of claim 50 , wherein performing at least one additional implantation process to further form source/drain regions for the device comprises: performing a third implant process to form source/drain extensions for the device; and performing a fourth implant process to further form source/drain regions in said device.

Claim 59

Dependent Claim 77 words

The method of claim 50 , wherein performing at least one additional implantation process to farther form source/drain regions for the device comprises: performing a third implant process at a dopant concentration ranging from approximately 1×10 14 to 5×10 15 ions/cm 2 to form source/drain extensions for the device; and performing a fourth implant process at a dopant concentration ranging from approximately 5×10 14 to 5×10 15 ions/cm 2 to further form source/drain regions in said device.

Claim 60

Dependent Claim 29 words

The method of claim 50 , further comprising performing at least one anneal process to activate the dopant material implanted during at least said first and second implant processes.

Claim 61

Dependent Claim 36 words

The method of claim 50 , further comprising forming a process layer above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 62

Dependent Claim 41 words

The method of claim 50 , further comprising thermally growing a process layer comprised of silicon dioxide above said gate electrode and said substrate after said first implant process, said second implant process being performed after said process layer is formed.

Claim 63

Dependent Claim 32 words

The method of claim 1 , wherein said second angled implant process is performed after said first angled implant process and prior to any other implant process being performed on said device.

Claim 64

Dependent Claim 29 words

The method of claim 1 , wherein said second angled implant process is the first implant process performed on said device after said first angled implant process is performed.

Claim 65

Dependent Claim 22 words

The method of claim 1 , wherein said first angled implant process is performed at an angle ranging from approximately 25-50 degrees.

Claim 66

Dependent Claim 22 words

The method of claim 1 , wherein said second angled implant process is performed at an angle ranging from approximately 25-50 degrees.

Claim 67

Dependent Claim 32 words

The method of claim 1 , wherein said first angled implant process is performed at an angle that is greater than the angle at which said second angled implant process is performed.

Claim 68

Dependent Claim 32 words

The method of claim 1 , wherein said first angled implant process is performed at an angle that is less than the angle at which said second angled implant process is performed.

Claim 69

Dependent Claim 30 words

The method of claim 1 , wherein said at least one additional implantation process to further form source/drain regions for the device is performed after said second angled implant process.

Claim 70

Dependent Claim 32 words

The method of claim 40 , wherein said second angled implant process is performed after said first angled implant process and prior to any other implant process being performed on said device.

Claim 71

Dependent Claim 29 words

The method of claim 40 , wherein said second angled implant process is the first implant process performed on said device after said first angled implant process is performed.

Claim 72

Dependent Claim 22 words

The method of claim 40 , wherein said first angled implant process is performed at an angle ranging from approximately 25-50 degrees.

Claim 73

Dependent Claim 22 words

The method of claim 40 , wherein said second angled implant process is performed at an angle ranging from approximately 25-50 degrees.

Claim 74

Dependent Claim 32 words

The method of claim 40 , wherein said first angled implant process is performed at an angle that is greater than the angle at which said second angled implant process is performed.

Claim 75

Dependent Claim 32 words

The method of claim 40 , wherein said first angled implant process is performed at an angle that is less than the angle at which said second angled implant process is performed.

Claim 76

Dependent Claim 30 words

The method of claim 40 , wherein said at least one additional implantation process to further form source/drain regions for the device is performed after said second angled implant process.

Claim 77

Dependent Claim 32 words

The method of claim 50 , wherein said second angled implant process is performed after said first angled implant process and prior to any other implant process being performed on said device.

Claim 78

Dependent Claim 29 words

The method of claim 50 , wherein said second angled implant process is the first implant process performed on said device after said first angled implant process is performed.

Claim 79

Dependent Claim 22 words

The method of claim 50 , wherein said first angled implant process is performed at an angle ranging from approximately 25-50 degrees.

Claim 80

Dependent Claim 22 words

The method of claim 50 , wherein said second angled implant process is performed at an angle ranging from approximately 25-50 degrees.

Claim 81

Dependent Claim 32 words

The method of claim 50 , wherein said first angled implant process is performed at an angle that is greater than the angle at which said second angled implant process is performed.

Claim 82

Dependent Claim 32 words

The method of claim 50 , wherein said first angled implant process is performed at an angle that is less than the angle at which said second angled implant process is performed.

Claim 83

Dependent Claim 30 words

The method of claim 50 , wherein said at least one additional implantation process to further form source/drain regions for the device is performed after said second angled implant process.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2006-07-07	2007-01-06	2007-07-08	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2010-07-07	2011-01-06	2011-07-08	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2014-07-07	2015-01-06	2015-07-08	$7700.00	Window Closed / Lapsed

Tilted counter-doped implant to sharpen halo profile

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