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US5937293A
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Method of fabricating a source/drain with LDD and halo
Assignee: Mosaid Technologies Inc
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Filing: 1998-04-09
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Granted: 1999-08-10
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Expires: 2018-04-09
Abstract
Abstract Disclosed are a semiconductor device and a method for fabricating the same which improve short channel effect and increase current driving force. The semiconductor device includes a first conductivity type semiconductor substrate, a gate electrode formed on the semiconductor substrate, a sidewall insulating film formed at both sides of the gate electrode, a second conductivity type first lightly doped impurity region and a second conductivity type second heavily doped impurity region formed in the semiconductor substrate at both sides of the gate electrode, a first conductivity type first impurity region for surrounding the second conductivity type first impurity region, and a first conductivity type second impurity region for surrounding the second conductivity type second impurity region.
Inventors
- 👤 Sang Don Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:48
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10P; H10P10/00; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10P30/00; H10P30/20; H10P30/222
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
114 words
A method for fabricating a semiconductor device comprising the steps of: forming a gate electrode on a first conductivity type semiconductor substrate; forming a second conductivity type first lightly doped impurity region in the semiconductor substrate at both sides of the gate electrode; forming a first conductivity type first impurity region surrounding the second conductivity type first lightly doped impurity region; forming a sidewall insulating film at both sides of the gate electrode; forming a second conductivity type second heavily doped impurity region in the semiconductor substrate at both sides of the sidewall insulating film; and forming a first conductivity type second impurity region surrounding the second conductivity type second heavily doped impurity region.
Claim 2
Independent Claim
114 words
A method for fabricating a semiconductor device comprising the steps of: forming a gate electrode on a first conductivity type semiconductor substrate; forming a second conductivity type first lightly doped impurity region in the semiconductor substrate at both sides of the gate electrode; forming a first conductivity type first impurity region surrounding the second conductivity type first lightly doped impurity region; forming a sidewall insulating film at both sides of the gate electrode; forming a second conductivity type second heavily doped impurity region in the semiconductor substrate at both sides of the sidewall insulating film; and forming a first conductivity type second impurity region surrounding the second conductivity type second heavily doped impurity region.
Claim 3
Dependent Claim
34 words
The method as claimed in claim 1, further comprising the step of implanting either ions for adjustment of threshold voltage or punch through stop ions into the semiconductor substrate before forming the gate electrode.
Claim 4
Dependent Claim
37 words
The method as claimed in claim 1, wherein the gate electrode may be formed of any one of polysilicon, metal and silicide, or dual structure of silicide and metal, or triple structure of polysilicon, metal and silicide.
Claim 5
Dependent Claim
67 words
The method as claimed in claim 1, wherein the step of forming the sidewall insulating film includes the steps of depositing an insulating film on an entire surface of the semiconductor substrate and etching back the insulating film, and before etching back the insulating film, the second conductivity type second heavily doped impurity region is formed in the substrate at both sides of the sidewall insulating film.
Claim 6
Dependent Claim
20 words
The method as claimed in claim 1, wherein the sidewall insulating film may be formed of oxide, nitride, or polysilicon.
Claim 7
Dependent Claim
55 words
The method as claimed in claim 1, wherein the first conductivity type first impurity region and the first conductivity type second impurity region are formed by P type impurity ion implantation, and the second conductivity type first impurity region and the second conductivity type second impurity region are formed by N type impurity ion implantation.
Claim 8
Dependent Claim
29 words
The method as claimed in claim 6, wherein the P type impurity ions are either B or BF2, and the N type impurity ions are either P or As.
Claim 9
Dependent Claim
37 words
The method as claimed in claim 1, wherein the first conductivity type second impurity region is formed before forming the first conductivity type second impurity region to surround the second conductivity type second heavily doped impurity region.
Claim 10
Dependent Claim
39 words
The method as claimed in claim 1, wherein the first conductivity type first impurity region is formed before forming the second conductivity type lightly doped first impurity region to surround the second conductivity type first lightly doped impurity region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-08-09 | 2003-02-08 | 2003-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-08-09 | 2007-02-08 | 2007-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-08-09 | 2011-02-08 | 2011-08-10 | $7700.00 | Window Closed / Lapsed |