Patent US3764931A successfully refreshed from Google Patents.
Patent US6586311B2 successfully refreshed from Google Patents.
US6586311B2
Expired / Lapsed
US
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Salicide block for silicon-on-insulator (SOI) applications
Assignee: Advanced Micro Devices Inc
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Filing: 2001-04-25
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Granted: 2003-07-01
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Expires: 2021-04-25
Abstract
Abstract A method is provided, the method comprising forming a buffer layer above a structure layer, and forming a dielectric layer above the buffer layer. The method also comprises patterning the dielectric layer to form a salicide block above a portion of the structure layer protecting the portion from a subsequent salicidation. A device is also provided, the device comprising a buffer layer above a structure layer and a dielectric layer above the buffer layer. The dielectric layer is patterned to form a salicide block above a portion of the structure layer to protect the portion from a subsequent salicidation.
Inventors
- 👤 David Donggang Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/811; H10D84/817; H10D86/00; H10D86/01; H10D86/201; H10D1/00; H10D1/40; H10D1/47
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
106 words
A method, comprising: providing a silicon-on-insulator structure comprising: a bulk substrate; a buried insulation layer; and an active layer; forming a polysilicon layer in the active layer of the silicon-on-insulator structure layer; forming a buffer layer above the polysilicon layer and at least a portion of the active layer; forming a dielectric layer above the buffer layer; and patterning the dielectric layer and the buffer layer to form a salicide block above the polysilicon layer and the at least a portion of the active layer said salicide block protecting the polysilicon layer and the at least a portion of the active layer from a subsequent salicidation.
Claim 2
Independent Claim
106 words
A method, comprising: providing a silicon-on-insulator structure comprising: a bulk substrate; a buried insulation layer; and an active layer; forming a polysilicon layer in the active layer of the silicon-on-insulator structure layer; forming a buffer layer above the polysilicon layer and at least a portion of the active layer; forming a dielectric layer above the buffer layer; and patterning the dielectric layer and the buffer layer to form a salicide block above the polysilicon layer and the at least a portion of the active layer said salicide block protecting the polysilicon layer and the at least a portion of the active layer from a subsequent salicidation.
Claim 3
Dependent Claim
17 words
The method of claim 1 , wherein forming the active layer comprises forming an epitaxial semiconductor layer.
Claim 4
Dependent Claim
23 words
The method of claim 1 , wherein forming the active layer comprises forming the active layer having a thickness of about 1000-5000 Å.
Claim 5
Dependent Claim
24 words
The method of claim 1 , wherein forming the polysilicon layer comprises forming an undoped polysilicon layer having a width of about 1000-2500 Å.
Claim 6
Dependent Claim
16 words
The method of claim 1 , wherein forming the polysilicon layer comprises forming a passive resistor.
Claim 7
Dependent Claim
23 words
The method of claim 1 , wherein forming the buffer layer comprises forming the buffer layer having a thickness of about 50-200 Å.
Claim 8
Dependent Claim
23 words
The method of claim 1 , wherein forming the dielectric layer comprises forming the dielectric layer having a thickness of about 100-900 Å.
Claim 9
Dependent Claim
24 words
The method of claim 1 , wherein forming the dielectric layer comprises forming the dielectric layer of silicon nitride (Si 3 N 4 ).
Claim 10
Dependent Claim
19 words
The method of claim 1 , further comprising forming at least one shallow trench isolation in the active layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-06-30 | 2006-12-30 | 2007-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-06-30 | 2010-12-30 | 2011-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-06-30 | 2014-12-30 | 2015-07-01 | $7700.00 | Window Closed / Lapsed |