US6576546B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
Assignee: Broadcom International Pte Ltd
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Filing: 2000-12-19
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Granted: 2003-06-10
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Expires: 2020-12-19
Abstract
Abstract An embodiment of the instant invention is a method of forming a conductive barrier layer on a dielectric layer, the method comprising the steps of: providing the dielectric layer (112 of FIG. 7d) having a top surface, a bottom surface, and an opening extending from the top surface to the bottom surface, and including a conductive plug (704 of FIG. 7d) having a top surface substantially coplanar with the top surface of the dielectric layer; subjecting the top surface of the dielectric layer and the top surface of the conductive plug to a gas selected from the group consisting of: argon, nitrogen, hydrogen, CH4, and any combination thereof, the gas being incorporated into a high-temperature ambient or a plasma; and forming the conductive barrier layer on the top surface of the dielectric layer and the top surface of the conductive plug after the step of subjecting the top surface of the dielectric layer and the top surface of the conductive plug to the gas incorporated into the high-temperature ambient or the plasma.
Inventors
- 👤 Stephen R. Gilbert
- 👤 Scott Summerfelt
- 👤 Luigi Colombo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 06:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/036; H10W20/037; H10W20/046; H10W20/047; H10W20/056; H10W20/064; H10W20/066; H10W20/071; H10W20/074; H10W20/075; H10W20/081; H10W20/093; H10W20/096; H10W20/097; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
159 words
A method of forming a conductive barrier layer on a dielectric layer, said meted comprising the steps of: providing the dielectric layer having a top surface, a bottom surface, and an opening extending from the top surface to the bottom surface, and including a conductive plug having a top surface substantially coplanar with said top surface of said dielectric layer; subjecting said top surface of said dielectric layer and said top surface of said conductive plug to a gas selected from the group consisting of: argon, nitrogen, hydrogen, CH 4 , and any combination thereof, said gas being incorporated into a high-temperature ambient or a plasma; and depositing said conductive barrier layer on said top surface of said dielectric layer and said top surface of said conductive plug after said step of subjecting said top surface of said dielectric layer and said top surface of said conductive plug to said gas incorporated into said high-temperature ambient or said plasma.
Claim 2
Independent Claim
159 words
A method of forming a conductive barrier layer on a dielectric layer, said meted comprising the steps of: providing the dielectric layer having a top surface, a bottom surface, and an opening extending from the top surface to the bottom surface, and including a conductive plug having a top surface substantially coplanar with said top surface of said dielectric layer; subjecting said top surface of said dielectric layer and said top surface of said conductive plug to a gas selected from the group consisting of: argon, nitrogen, hydrogen, CH 4 , and any combination thereof, said gas being incorporated into a high-temperature ambient or a plasma; and depositing said conductive barrier layer on said top surface of said dielectric layer and said top surface of said conductive plug after said step of subjecting said top surface of said dielectric layer and said top surface of said conductive plug to said gas incorporated into said high-temperature ambient or said plasma.
Claim 3
Dependent Claim
16 words
The method of claim 1 , wherein said high temperature is around 500 to 1000 C.
Claim 4
Dependent Claim
16 words
The method of claim 1 , wherein said high temperature is around 600 to 750 C.
Claim 5
Dependent Claim
35 words
The method of claim 1 , wherein said conductive barrier layer is comprised of a conductor selected from the group consisting of: TiAlN, TiSiN, TaN, TiN, CrN, CrAlN, TaSiN, ZrN, HfN, and any combination thereof.
Claim 6
Dependent Claim
14 words
The method of claim 1 , wherein said conductive plug is comprised of tungsten.
Claim 7
Dependent Claim
15 words
The method of claim 1 , wherein said gas is comprised of nitrogen and hydrogen.
Claim 8
Dependent Claim
15 words
The method of claim 1 , wherein said gas is comprised of argon and hydrogen.
Claim 9
Dependent Claim
45 words
The method of claim 5 , wherein said step of subjecting said top surface of said dielectric layer and said top surface of said conductive plug to said gas incorporated into said high-temperature ambient or said plasma removes any oxide formed on said tungsten plug.
Claim 10
Dependent Claim
25 words
The method of claim 1 , further comprising: before the subjecting step, exposing the top surface of the dielectric layer to a low-temperature oxygen plasma.
Claim 11
Dependent Claim
74 words
The method of claim 1 , wherein the step of providing the dielectric layer including the conductive plug comprises: forming the dielectric layer over a semiconducting surface of a substrate; patterning and etching a selected location of the dielectric layer to form an opening therethrough; filling the opening with a conductive material; and planarizing the dielectric layer and the conductive material by chemical mechanical polishing, to form the conductive plug from the conductive material.
Claim 12
Dependent Claim
25 words
The method of claim 1 , further comprising: after the depositing step, forming a ferroelectric capacitor having a plate in contact with the conductive plug.
Claim 13
Independent Claim
134 words
A method of forming a conductive baffler layer on a dielectric layer, said method comprising the steps of: forming a dielectric layer over a semiconducting surface of a substrate; etching a selected location of the dielectric layer to form an opening therethrough; filling the opening with a conductive material; and planarizing the dielectric layer and the conductive material by chemical mechanical polishing, to form a conductive plug from the conductive material, the conductive plug having a top surface substantially coplanar with a top surface of the dielectric layer; annealing the top surface of said dielectric layer and the top surface of said conductive plug at a high temperature; and depositing the conductive barrier layer on the top surface of the dielectric layer and the top surface of the conductive plug after the annealing step.
Claim 14
Independent Claim
134 words
A method of forming a conductive baffler layer on a dielectric layer, said method comprising the steps of: forming a dielectric layer over a semiconducting surface of a substrate; etching a selected location of the dielectric layer to form an opening therethrough; filling the opening with a conductive material; and planarizing the dielectric layer and the conductive material by chemical mechanical polishing, to form a conductive plug from the conductive material, the conductive plug having a top surface substantially coplanar with a top surface of the dielectric layer; annealing the top surface of said dielectric layer and the top surface of said conductive plug at a high temperature; and depositing the conductive barrier layer on the top surface of the dielectric layer and the top surface of the conductive plug after the annealing step.
Claim 15
Dependent Claim
15 words
The method of claim 12 , wherein the annealing step is performed in a vacuum.
Claim 16
Dependent Claim
16 words
The method of claim 12 , wherein the annealing step is performed in an inert ambient.
Claim 17
Dependent Claim
27 words
The method of claim 12 , wherein the annealing step is performed in an ambient comprised of a mixture of an inert gas and a reducing gas.
Claim 18
Dependent Claim
20 words
The method of claim 12 , wherein the annealing step is performed in an ambient comprised of a reducing gas.
Claim 19
Dependent Claim
25 words
The method of claim 12 , further comprising: after the depositing step, forming a ferroelectric capacitor having a plate in contact with the conductive plug.
Claim 20
Dependent Claim
25 words
The method of claim 12 , further comprising: before the annealing step, exposing the top surface of the dielectric layer to a low-temperature oxygen plasma.
Claim 21
Dependent Claim
31 words
The method of claim 12 , further comprising: before the depositing step, exposing the top surface of the dielectric layer and the top surface of the conductive plug to a plasma.
Claim 22
Dependent Claim
13 words
The method of claim 19 , wherein the plasma incorporates a reducing gas.
Claim 23
Dependent Claim
13 words
The method of claim 19 , wherein the plasma incorporates an inert gas.
Claim 24
Dependent Claim
14 words
The method of claim 21 , wherein the plasma also incorporates a reducing gas.
Claim 25
Independent Claim
137 words
A method of forming a conductive baffler layer on a dielectric layer, said method comprising the steps of: forming a dielectric layer over a semiconducting surface of a substrate; etching a selected location of the dielectric layer to form an opening therethrough; filling the opening with a conductive material; and planarizing the dielectric layer and the conductive material by chemical mechanical polishing, to form a conductive plug from the conductive material, the conductive plug having a top surface substantially coplanar with a top surface of the dielectric layer; after the planarizing step, exposing the top surface of the dielectric layer and the top surface of the conductive plug to a plasma; and depositing the conductive baffler layer on the top surface of the dielectric layer and the top surface of the conductive plug after the exposing step.
Claim 26
Independent Claim
137 words
A method of forming a conductive baffler layer on a dielectric layer, said method comprising the steps of: forming a dielectric layer over a semiconducting surface of a substrate; etching a selected location of the dielectric layer to form an opening therethrough; filling the opening with a conductive material; and planarizing the dielectric layer and the conductive material by chemical mechanical polishing, to form a conductive plug from the conductive material, the conductive plug having a top surface substantially coplanar with a top surface of the dielectric layer; after the planarizing step, exposing the top surface of the dielectric layer and the top surface of the conductive plug to a plasma; and depositing the conductive baffler layer on the top surface of the dielectric layer and the top surface of the conductive plug after the exposing step.
Claim 27
Dependent Claim
13 words
The method of claim 23 , wherein the plasma incorporates a reducing gas.
Claim 28
Dependent Claim
25 words
The method of claim 23 , further comprising: after the depositing step, forming a ferroelectric capacitor having a plate in contact with the conductive plug.
Claim 29
Dependent Claim
25 words
The method of claim 23 , further comprising: before the exposing step, exposing the top surface of the dielectric layer to a low-temperature oxygen plasma.
Claim 30
Dependent Claim
13 words
The method of claim 23 , wherein the plasma incorporates an inert gas.
Claim 31
Dependent Claim
14 words
The method of claim 27 , wherein the plasma also incorporates a reducing gas.
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| 3.5 Years (Year 4) | 2006-06-09 | 2006-12-09 | 2007-06-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-06-09 | 2010-12-09 | 2011-06-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-06-09 | 2014-12-09 | 2015-06-10 | $7700.00 | Window Closed / Lapsed |