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US6566760B1 Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor storage device having memory chips in a stacked structure

Assignee: Hitachi Ltd
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Filing: 2000-09-19
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Granted: 2003-05-20
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Expires: 2020-09-19
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Abstract

Abstract Two memory chips each being subjected to memory accesses in 2-bit units are assembled into a stacked structure by placing their back surfaces one over the other, so as to make memory accesses in 4-bit units. A memory module is so constructed that a plurality of such semiconductor storage devices, in each of which two memory chips each being subjected to memory accesses in 2-bit units are assembled into a stacked structure by placing their back surfaces one over the other, so as to make memory accesses in 4-bit units, are mounted on a mounting circuit board which is square and which is formed with electrodes along one latus thereof.

Inventors

  • 👤 Masayasu Kawamura
  • 👤 Atsushi Nakamura
  • 👤 Yoshihiro Sakaguchi
  • 👤 Yoshitaka Kinoshita
  • 👤 Yasushi Takahashi
  • 👤 Yoshihiko Inoue

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 14:09
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/421; H10W70/442; G; G11; G11C; G11C5/00; G11C5/02; G11C5/025; G11C5/04; G11C5/06; G11C8/00; G11C8/12; H10W70/411; H10W70/415; H10W72/00; H10W72/50; H10W72/90; H10W90/00; H10W90/811; H10W70/60; H10W72/071; H10W72/075; H10W72/541; H10W72/5449; H10W72/59; H10W72/851; H10W72/853; H10W72/865; H10W72/931; H10W72/932; H10W72/941; H10W72/944; H10W72/9445; H10W72/951; H10W74/00; H10W90/20; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 110 words
A memory module comprising: a plurality of semiconductor storage devices, wherein each semiconductor storage device comprises two memory chips each of which is subjected to memory accesses in 2-bit data units and capable of outputting 2-bit data units at a memory access, and both are assembled in a stacked structure so as to make memory accesses in 4-bit data units and are activated to output 4-bit data units; and wherein each of said two memory chips is provided with tape-like leads on a front surface thereof, and that, at least the front surface part is in contact with a sealing resin except a back surface of said each memory chip.
Claim 2
Dependent Claim 110 words
A memory module comprising: a plurality of semiconductor storage devices, wherein each semiconductor storage device comprises two memory chips each of which is subjected to memory accesses in 2-bit data units and capable of outputting 2-bit data units at a memory access, and both are assembled in a stacked structure so as to make memory accesses in 4-bit data units and are activated to output 4-bit data units; and wherein each of said two memory chips is provided with tape-like leads on a front surface thereof, and that, at least the front surface part is in contact with a sealing resin except a back surface of said each memory chip.

References Cited (Backward Citations)

US5138438A Cited
US5147815A Cited
JPH0661379A Cited
US5508565A Cited
US5473198A Cited
US5491612A Cited
JPH09306940A Cited
US5982043A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2006-05-19 2006-11-18 2007-05-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2010-05-19 2010-11-18 2011-05-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2014-05-19 2014-11-18 2015-05-20 $7700.00 Window Closed / Lapsed

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