US6528430B2
Expired / Lapsed
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Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
Assignee: Samsung Electronics Co Ltd
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Filing: 2001-05-01
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Granted: 2003-03-04
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Expires: 2021-05-01
Abstract
Abstract An atomic layer deposition (ALD) method employing Si 2 Cl 6 and NH 3 , or Si 2 Cl 6 and activated NH 3 as reactants. In one embodiment, the invention includes the steps of (a) placing a substrate into a chamber, (b) injecting a first reactant containing Si 2 Cl 6 into the chamber, (c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate, d) removing the non-chemically absorbed portion of the first reactant from the chamber, (e) injecting a second reactant including NH 3 into the chamber, (f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate, and (g) removing the unreacted portion of the second reactant from the chamber. In other embodiments, the first reactant can contain two or more compounds containing Si and Cl, such as Si 2 Cl 6 and SiCl 4 . In another embodiment of the invention, steps b-g are repeated one or more times to increase the thickness of the layer.
Inventors
- 👤 Kim Yeong Kwan
- 👤 Park Young Wook
- 👤 Lee Joo Won
- 👤 Kim Dong Chan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/45542; C23C16/45553; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S438/00; Y10S438/971
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
133 words
An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of: (a) placing a substrate into a chamber; (b) injecting a first reactant containing two or more compounds into the chamber, each said compound containing Si and Cl; (c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate; (d) removing the non-chemically absorbed second portion of the first reactant from the chamber; (e) injecting a second reactant including NH 3 into the chamber; (f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate; and, (g) removing non-reacted portions of the second reactant from the chamber.
Claim 2
Dependent Claim
133 words
An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of: (a) placing a substrate into a chamber; (b) injecting a first reactant containing two or more compounds into the chamber, each said compound containing Si and Cl; (c) chemisorbing a first portion of the first reactant onto the substrate and physisorbing a second portion of the first reactant onto the substrate; (d) removing the non-chemically absorbed second portion of the first reactant from the chamber; (e) injecting a second reactant including NH 3 into the chamber; (f) chemically reacting a first portion of the second reactant with the chemisorbed first portion of the first reactant to form a silicon-containing solid on the substrate; and, (g) removing non-reacted portions of the second reactant from the chamber.
Claim 3
Dependent Claim
22 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate comprises Si 3 N 4 .
Claim 4
Dependent Claim
20 words
A method as claimed in claim 1 , wherein the silicon-containing solid comprises a Si 3 N 4 thin film.
Claim 5
Dependent Claim
23 words
A method as claimed in claim 1 , wherein a component ratio of N/Si of said silicon-containing solid is between about 1-1.6 inclusive.
Claim 6
Dependent Claim
23 words
A method as claimed in claim 1 , which further comprises the step of heating the substrate to between 350 and 700° C.
Claim 7
Dependent Claim
24 words
A method as claimed in claim 1 , which further comprises the step of pressurizing the chamber to an absolute pressure of 0.01-100 torr.
Claim 8
Dependent Claim
22 words
A method as claimed in claim 1 , wherein a chamber pressure is maintained at a constant absolute pressure of 0.01-100 torr.
Claim 9
Dependent Claim
26 words
A method as claimed in claim 1 , which further comprises the step of changing a chamber pressure during implementing at least one of said steps.
Claim 10
Dependent Claim
30 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate has a dry etch selectivity with respect to a silicon material (active mask nitride).
Claim 11
Dependent Claim
40 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate has a dry etch selectivity with respect to a gate material selected from the group consisting of WSix and doped poly-silicon (gate mask nitride).
Claim 12
Dependent Claim
40 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate has a dry etch selectivity with respect to a conductive material selected from the group consisting of W and Ti/TiN (bit line mask nitride).
Claim 13
Dependent Claim
19 words
A method as claimed in claim 1 , herein the silicon-containing material comprises a chemical mechanical polishing stopping layer.
Claim 14
Dependent Claim
31 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate comprises an insulating layer having a dry etch selectivity with respect to SiO 2 .
Claim 15
Dependent Claim
36 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate comprises an insulating layer having an HF-containing solution wet etch selectivity with respect to SiO 2 of a semiconductor device.
Claim 16
Dependent Claim
24 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate comprises a gate dielectric of a semiconductor device.
Claim 17
Dependent Claim
38 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate comprises a layer formed between a Ta 2 O 5 layer and a storage node of a capacitor of a semiconductor device.
Claim 18
Dependent Claim
27 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate comprises a dielectric layer of a capacitor of a semiconductor device.
Claim 19
Dependent Claim
24 words
A method as claimed in claim 1 , wherein the silicon-containing solid formed on the substrate comprises an STI liner of a semiconductor device.
Claim 20
Dependent Claim
21 words
A method as claimed in claim 1 , wherein the second reactant containing NH 3 includes contains activated NH 3 .
Claim 21
Dependent Claim
23 words
A method as claimed in claim 1 , wherein the plasma power of the remote plasma method is between about 100-3000 watts inclusive.
Claim 22
Dependent Claim
20 words
An atomic layer deposition method according to claim 1 , which further comprises repeating at least one of steps (b)-(f).
Claim 23
Dependent Claim
147 words
An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of: (a) placing a substrate into a chamber; (b) injecting a flow of a first reactant containing Si 2 Cl 6 into the chamber; (c) while injecting the first reactant into the chamber, adding SiCl 4 to the flow of the first reactant; (d) chemisorbing first portions of the Si 2 Cl 6 and the SiCl 4 onto the substrate; (e) removing non-chemically absorbed portions of the second reactant from the chamber; (f) injecting a second reactant including NH 3 into the chamber; (g) chemically reacting a first portion of the second reactant with the respective chemisorbed portions of the Si 2 Cl 6 and the SiCl 4 to form a silicon-containing solid on the substrate; and, (h) removing the non-reacted second portion of the second reactant from the chamber.
Claim 24
Dependent Claim
147 words
An atomic layer deposition method of forming a solid thin film layer containing silicon comprising the steps of: (a) placing a substrate into a chamber; (b) injecting a flow of a first reactant containing Si 2 Cl 6 into the chamber; (c) while injecting the first reactant into the chamber, adding SiCl 4 to the flow of the first reactant; (d) chemisorbing first portions of the Si 2 Cl 6 and the SiCl 4 onto the substrate; (e) removing non-chemically absorbed portions of the second reactant from the chamber; (f) injecting a second reactant including NH 3 into the chamber; (g) chemically reacting a first portion of the second reactant with the respective chemisorbed portions of the Si 2 Cl 6 and the SiCl 4 to form a silicon-containing solid on the substrate; and, (h) removing the non-reacted second portion of the second reactant from the chamber.
Claim 25
Dependent Claim
19 words
A method as claimed in claim 22 further comprising the step of repeating at least one of steps (b)-(h).
Claim 26
Dependent Claim
20 words
A method as claimed in claim 22 , wherein the second reactant containing NH 3 contains activated NH 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-03-03 | 2006-09-02 | 2007-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-03-03 | 2010-09-02 | 2011-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-03-03 | 2014-09-02 | 2015-03-04 | $7700.00 | Window Closed / Lapsed |