US6333547B1
Expired / Lapsed
US
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Semiconductor device and method of manufacturing the same
Assignee: Kioxia Corp
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Filing: 2000-01-06
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Granted: 2001-12-25
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Expires: 2020-01-06
Abstract
Abstract Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
Inventors
- 👤 Masayuki Tanaka
- 👤 Shigehiko Saida
- 👤 Yoshitaka Tsunashima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:40
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P14/66; H10P14/668; H10P14/6681; H10P14/6903; H10P14/6905; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10W20/069; H10W20/0693; H10W20/071; H10W20/074; H10W20/076; H10W20/077; H10W20/081; H10W20/084; H10W20/093; H10W20/096; H10W20/40; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6339; H10P14/662; H10P14/6682; H10P14/69215
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
21 words
A semiconductor device, comprising a silicon nitride film containing chlorine in a concentration of at least 4×10 20 cm −3 .
Claim 2
Dependent Claim
21 words
A semiconductor device, comprising a silicon nitride film containing chlorine in a concentration of at least 4×10 20 cm −3 .
Claim 3
Dependent Claim
17 words
A semiconductor device according to claim 1 , wherein said silicon nitride film contains an excessive silicon.
Claim 4
Dependent Claim
23 words
A semiconductor device according to claim 2 , wherein a ratio of chlorine/silicon of said silicon nitride film is not larger than 1.33.
Claim 5
Dependent Claim
15 words
A semiconductor device according to claim 1 , wherein said silicon nitride film contains carbon.
Claim 6
Dependent Claim
18 words
A semiconductor device according to claim 1 , wherein said silicon nitride film is formed within a trench.
Claim 7
Dependent Claim
18 words
A semiconductor device according to claim 2 , wherein said silicon nitride film is formed within a trench.
Claim 8
Dependent Claim
18 words
A semiconductor device according to claim 3 , wherein said silicon nitride film is formed within a trench.
Claim 9
Dependent Claim
18 words
A semiconductor device according to claim 4 , wherein said silicon nitride film is formed within a trench.
Claim 10
Dependent Claim
83 words
A semiconductor device according to claim 1 , further comprising a semiconductor substrate having a diffusion layer formed in a surface region, a barrier metal layer formed on the surface of said diffusion layer, an insulating film having a contact hole extending to reach said barrier metal layer, and a conductive film filling a lower portion of said contact hole, wherein said silicon nitride film is formed on said conductive film in a manner to fill an upper portion of the contact hole.
Claim 11
Dependent Claim
25 words
A semiconductor device according to claim 4 , wherein said silicon nitride film has a carbon concentration of at least 4×10 20 cm −3 .
Claim 12
Dependent Claim
20 words
A semiconductor device according to claim 1 , wherein said chlorine concentration is at least 1×10 21 cm −3 .
Claim 13
Dependent Claim
21 words
A semiconductor device according to claim 10 , wherein said silicon nitride film is formed in direct contact with Cu wiring.
Claim 14
Dependent Claim
60 words
A semiconductor device, comprising: an underlying region having a concave portion and formed on the side of a main surface of a semiconductor substrate; and a silicon oxide film containing chlorine and buried in the entire region of the concave portion formed in the underlying region; wherein said silicon oxide film contains at least 1×10 19 cm −3 of chlorine.
Claim 15
Dependent Claim
60 words
A semiconductor device, comprising: an underlying region having a concave portion and formed on the side of a main surface of a semiconductor substrate; and a silicon oxide film containing chlorine and buried in the entire region of the concave portion formed in the underlying region; wherein said silicon oxide film contains at least 1×10 19 cm −3 of chlorine.
Claim 16
Dependent Claim
73 words
A semiconductor device, comprising: an underlying region having a concave portion and formed on the side of a main surface of a semiconductor substrate; and a silicon oxide film containing chlorine and buried in the entire region of the concave portion formed in the underlying region; wherein said silicon oxide film contains at least one of phosphorus and boron, and said silicon oxide film contains at least 1×10 19 cm −3 of chlorine.
Claim 17
Dependent Claim
73 words
A semiconductor device, comprising: an underlying region having a concave portion and formed on the side of a main surface of a semiconductor substrate; and a silicon oxide film containing chlorine and buried in the entire region of the concave portion formed in the underlying region; wherein said silicon oxide film contains at least one of phosphorus and boron, and said silicon oxide film contains at least 1×10 19 cm −3 of chlorine.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-12-24 | 2005-06-25 | 2005-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-24 | 2009-06-25 | 2009-12-25 | $3760.00 | Window Closed / Lapsed |
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