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US6527855B2
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Atomic layer deposition of cobalt from cobalt metallorganic compounds
Assignee: Rensselaer Polytechnic Institute
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Filing: 2001-10-10
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Granted: 2003-03-04
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Expires: 2021-10-10
Abstract
Abstract Cobalt thin films were prepared by atomic layer deposition (ALD). The precursor cobalt(II) acetylacetonate [Co(C 5 H 7 O 2 ) 2 ] was used to selectively deposit films onto iridium substrates using hydrogen reduction. Cobalt growth was observed on SiO 2 , silicon, fluorinated silica glass (FSG), and tantalum when silane was used as a reducing agent.
Inventors
- 👤 Mark J. DelaRosa
- 👤 Toh-Ming Lu
- 👤 Atul Kumar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:30
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
78 words
An atomic layer deposition process comprising depositing a layer comprising a metal selected from the group consisting of Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Ag, and Au from a precursor comprising at least one metallorganic compound on a substrate comprising at least one noble or semi-noble metal using a reducing agent comprising hydrogen; and with the proviso that the precursor does not decompose by thermolysis at a temperature less than or equal to a deposition temperature.
Claim 2
Dependent Claim
78 words
An atomic layer deposition process comprising depositing a layer comprising a metal selected from the group consisting of Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Ag, and Au from a precursor comprising at least one metallorganic compound on a substrate comprising at least one noble or semi-noble metal using a reducing agent comprising hydrogen; and with the proviso that the precursor does not decompose by thermolysis at a temperature less than or equal to a deposition temperature.
Claim 3
Dependent Claim
29 words
An atomic layer deposition process according to claim 1 , wherein the deposited layer comprises a metal selected from the group consisting of Co, Ir, Ni, Pd, and Pt.
Claim 4
Dependent Claim
17 words
An atomic layer deposition process according to claim 1 , wherein the precursor comprises a bidentate ligand.
Claim 5
Dependent Claim
26 words
An atomic layer deposition process according to claim 1 , wherein the precursor is selected from the group consisting of β-diketonates, monothio-β-ketonates, dithio-β-ketonates, aminoketonates, and silyl-β-diketonates.
Claim 6
Dependent Claim
16 words
An atomic layer deposition process according to claim 1 , wherein the precursor comprises a β-diketonate.
Claim 7
Dependent Claim
23 words
An atomic layer deposition process according to claim 5 , wherein the deposited layer comprises cobalt, and the precursor comprises Co(acac) 2 .
Claim 8
Dependent Claim
15 words
An atomic layer deposition process according to claim 1 , wherein the substrate comprises iridium.
Claim 9
Dependent Claim
16 words
An atomic layer deposition process according to claim 1 , additionally comprising using an oxidizing agent.
Claim 10
Dependent Claim
21 words
An atomic layer deposition process according to claim 8 , wherein the oxidizing agent is selected from oxygen, water and alcohols.
Claim 11
Dependent Claim
46 words
An atomic layer deposition process according to claim 1 , wherein the precursor, reducing agent and, optionally, an oxidizing agent are sequentially pulsed into a reaction chamber containing the substrate, and at least one purge gas is pulsed into the reaction chamber between each sequential pulse.
Claim 12
Dependent Claim
121 words
An atomic layer deposition process comprising depositing a layer comprising a metal selected from the group consisting of Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au from a precursor comprising at least one metallorganic compound on a substrate comprising at least one metal nitride or at least one metal oxide using an oxidizing agent, and a reducing agent comprising hydrogen; wherein the precursor, reducing agent and oxidizing agent are sequentially pulsed into a reaction chamber containing the substrate, and at least one purge gas is pulsed into the reaction chamber between each sequential pulse; and; with the proviso that the precursor does not decompose by thermolysis at a temperature less than or equal to a deposition temperature.
Claim 13
Dependent Claim
121 words
An atomic layer deposition process comprising depositing a layer comprising a metal selected from the group consisting of Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au from a precursor comprising at least one metallorganic compound on a substrate comprising at least one metal nitride or at least one metal oxide using an oxidizing agent, and a reducing agent comprising hydrogen; wherein the precursor, reducing agent and oxidizing agent are sequentially pulsed into a reaction chamber containing the substrate, and at least one purge gas is pulsed into the reaction chamber between each sequential pulse; and; with the proviso that the precursor does not decompose by thermolysis at a temperature less than or equal to a deposition temperature.
Claim 14
Dependent Claim
30 words
An atomic layer deposition process according to claim 11 , wherein the deposited layer comprises a metal selected from the group consisting of Co, Ir, Ni, Pd, Pt, and Cu.
Claim 15
Dependent Claim
17 words
An atomic layer deposition process according to claim 11 , wherein the precursor comprises a bidentate ligand.
Claim 16
Dependent Claim
26 words
An atomic layer deposition process according to claim 11 , wherein the precursor is selected from the group consisting of β-diketonates, monothio-β-ketonates, dithio-β-ketonates, aminoketonates, and silyl-β-diketonates.
Claim 17
Dependent Claim
16 words
An atomic layer deposition process according to claim 11 , wherein the precursor comprises a β-diketonate.
Claim 18
Dependent Claim
21 words
An atomic layer deposition process according to claim 11 , wherein the oxidizing agent is selected from oxygen, water and alcohols.
Claim 19
Dependent Claim
49 words
An atomic layer deposition process comprising depositing, on a substrate, a layer comprising a metal selected from the group consisting of Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au from a precursor comprising at least one metallorganic compound using a reducing agent comprising a hydride.
Claim 20
Dependent Claim
49 words
An atomic layer deposition process comprising depositing, on a substrate, a layer comprising a metal selected from the group consisting of Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au from a precursor comprising at least one metallorganic compound using a reducing agent comprising a hydride.
Claim 21
Dependent Claim
16 words
An atomic layer deposition process according to claim 17 , wherein the reducing agent comprises silane.
Claim 22
Dependent Claim
30 words
An atomic layer deposition process according to claim 17 , wherein the deposited layer comprises a metal selected from the group consisting of Co, Ir, Ni, Pd, Pt, and Cu.
Claim 23
Dependent Claim
17 words
An atomic layer deposition process according to claim 17 , wherein the precursor comprises a bidentate ligand.
Claim 24
Dependent Claim
26 words
An atomic layer deposition process according to claim 17 , wherein the precursor is selected from the group consisting of β-diketonates, monothio-β-ketonates, dithio-β-ketonates, aminoketonates, and silyl-β-diketonates.
Claim 25
Dependent Claim
16 words
An atomic layer deposition process according to claim 17 , wherein the precursor comprises a β-diketonate.
Claim 26
Dependent Claim
24 words
An atomic layer deposition process according to claim 17 , wherein the substrate is selected from tantalum, silicon, silicon dioxide and fluorinated silica glass.
Claim 27
Dependent Claim
23 words
An atomic layer deposition process according to claim 23 , wherein the deposited layer comprises cobalt, and the precursor comprises Co(acac) 2 .
Claim 28
Dependent Claim
16 words
An atomic layer deposition process according to claim 17 , additionally comprising using an oxidizing agent.
Claim 29
Dependent Claim
21 words
An atomic layer deposition process according to claim 25 , wherein the oxidizing agent is selected from oxygen, water and alcohols.
Claim 30
Dependent Claim
46 words
An atomic layer deposition process according to claim 17 , wherein the precursor, reducing agent and, optionally, an oxidizing agent are sequentially pulsed into a reaction chamber containing the substrate, and at least one purge gas is pulsed into the reaction chamber between each sequential pulse.
References Cited (Backward Citations)
US6124158A
Cited
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