Method for forming refractory metal-silicon-nitrogen capacitors and structures formed

Abstract

Abstract A method forforming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure and the structure formed are described. In the method, a pre-processed semiconductor substrate is first positioned in a sputtering chamber. Ar gas is then flown into the sputtering chamber to sputter deposit a first refractory metal-silicon-nitrogen layer on the substrate from a refractory metal silicide target, or from two targets of a refractory metal and a silicon. N2 gas is then flown into the sputtering chamber until that the concentration of N2 gas in the chamber is at least 35% to sputter deposit a second refractory metal-silicon-nitrogen layer on top of the first refractory metal-silicon-nitrogen layer. The N2 gas flow is then stopped to sputter deposit a third refractory metal-silicon-nitrogen layer on top of the second refractory metal-silicon-nitrogen layer. The multi-layer stack of the refractory metal-silicon-nitrogen is then photolithographically formed into a capacitor.

Inventors

• 👤 Cyril Cabral, Jr.
• 👤 Lawrence Clevenger
• 👤 Louis Hsu
• 👤 Keith Kwong Hon Wong

Bibliographic Details