Patent US6515343B1 successfully refreshed from Google Patents.
US6515343B1
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Metal-to-metal antifuse with non-conductive diffusion barrier
Assignee: QuickLogic Corp
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Filing: 1998-11-19
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Granted: 2003-02-04
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Expires: 2018-11-19
Abstract
Abstract An antifuse is disposed between a first and second conductor. An insulating diffusion barrier (for example, silicon nitride) covers the sidewalls of the antifuse to inhibit contaminants (for example, copper, chlorine, fluorine, sodium, potassium, and moisture) from diffusing laterally into the antifuse from the interlayer dielectric, where a damascene copper conductor and/or a low-k dielectric is used. In a damascene antifuse structure, the insulating diffusion barrier layer covers an upper surface of the damascene conductor that is not covered by the antifuse. This insulating diffusion barrier layer inhibits copper from diffusing up into an interlayer dielectric and then diffusing laterally into the antifuse.
Inventors
- 👤 Mehul D. Shroff
- 👤 Rajiv Jain
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:29
CPC Classifications
H; H10; H10W; H10W42/00; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/086
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
129 words
An antifuse structure, comprising: a first conductor of a first layer of interconnect, the first conductor having a substantially planar upper surface; a second conductor of a second layer of interconnect; an interlayer dielectric layer disposed at least partly between the first layer of interconnect and the second layer of interconnect; an antifuse comprising a programmable material layer, the antifuse being disposed between a first portion of the planar upper surface of the first conductor and the second conductor; and an insulating diffusion barrier layer disposed over a plurality of sidewalls of the antifuse, the insulating diffusion barrier layer separating the interlayer dielectric layer from a sidewall of the programmable material layer of the antifuse, the antifuse structure being programmable to couple the first conductor to the second conductor.
Claim 2
Dependent Claim
129 words
An antifuse structure, comprising: a first conductor of a first layer of interconnect, the first conductor having a substantially planar upper surface; a second conductor of a second layer of interconnect; an interlayer dielectric layer disposed at least partly between the first layer of interconnect and the second layer of interconnect; an antifuse comprising a programmable material layer, the antifuse being disposed between a first portion of the planar upper surface of the first conductor and the second conductor; and an insulating diffusion barrier layer disposed over a plurality of sidewalls of the antifuse, the insulating diffusion barrier layer separating the interlayer dielectric layer from a sidewall of the programmable material layer of the antifuse, the antifuse structure being programmable to couple the first conductor to the second conductor.
Claim 3
Dependent Claim
38 words
The antifuse structure of claim 1 , further comprising a conductive plug disposed between the antifuse and the second conductor, wherein the antifuse is disposed on the first portion of the planar upper surface of the first conductor.
Claim 4
Dependent Claim
76 words
The antifuse structure of claim 2 , wherein the insulating diffusion barrier layer is also disposed over a second portion of the planar upper surface of the first conductor, the insulating diffusion barrier is a layer that extends from the second portion of the upper surface of the first conductor, up a sidewall of the antifuse, and over a portion of an upper surface of the antifuse, the insulating diffusion barrier layer contacting the conductive plug.
Claim 5
Dependent Claim
59 words
The antifuse structure of claim 1 , further comprising a conductive plug disposed between the first portion of the planar upper surface of the first conductor and the antifuse, wherein the antifuse is disposed on a portion of a substantially planar top surface of the conductive plug and is in contact with the bottom surface of the second conductor.
Claim 6
Dependent Claim
50 words
The antifuse structure of claim 4 , wherein the insulating diffusion barrier layer is also disposed over a sidewall of the second conductor, the insulating diffusion barrier being a layer that extends from a portion of an upper surface of the second conductor and down a sidewall of the antifuse.
Claim 7
Dependent Claim
21 words
The antifuse structure of claim 1 , wherein at least one of the first conductor and the second conductor comprises aluminum.
Claim 8
Dependent Claim
78 words
The antifuse structure of claim 1 , wherein: at least one of the first conductor and the second conductor is a damascene conductor at least a portion of which has a copper concentration greater than ten percent by weight; the antifuse being disposed on the first portion of the planar upper surface of the first conductor; and the insulating diffusion barrier layer is also disposed over a second portion of the planar upper surface of the first conductor.
Claim 9
Dependent Claim
67 words
The antifuse structure of claim 7 , wherein the insulating diffusion barrier layer is also disposed over a second portion of the planar upper surface of the first conductor, the insulating diffusion barrier is a layer that extends from the second portion of the upper surface of the first conductor, up a sidewall of the antifuse, and over a portion of an upper surface of the antifuse.
Claim 10
Dependent Claim
35 words
The antifuse structure of claim 1 , the antifuse further comprising: a barrier metal layer, a bottom surface of the barrier metal layer being in contact with an upper surface of the programmable material layer.
Claim 11
Dependent Claim
67 words
The antifuse structure of claim 9 , the antifuse further comprising: a second barrier metal layer, a planar bottom surface of the second barrier metal layer being in contact with the first portion of the upper surface of the first conductor, at least a portion of a planar upper surface of the second barrier metal layer being in contact with a portion of the programmable material layer.
Claim 12
Dependent Claim
72 words
The antifuse structure of claim 7 , wherein the antifuse comprises: a first metal layer; a second metal layer; an insulating layer having an opening; and the programmable material layer, the insulating layer and the programmable material layer being disposed between the first metal layer and the second metal layer, the programmable material layer being in contact with one of the first metal layer and the second metal layer through the opening.
Claim 13
Dependent Claim
33 words
The antifuse structure of claim 1 , wherein the insulating diffusion barrier layer comprises one of at least silicon nitride and silicon oxynitride, and wherein the interlayer dielectric layer is not silicon nitride.
Claim 14
Dependent Claim
18 words
The antifuse structure of claim 1 , wherein the programmable material layer is a layer of amorphous silicon.
Claim 15
Dependent Claim
41 words
The antifuse structure of claim 1 , further comprising a passivation layer, wherein at least one of the interlayer dielectric layer and passivation layer contains at least one of fluorine and chlorine and has a dielectric constant of four or less.
Claim 16
Dependent Claim
28 words
The antifuse structure of claim 1 , further comprising a passivation layer, wherein at least one of the interlayer dielectric layer and passivation layer is a low-k dielectric.
Claim 17
Dependent Claim
33 words
The antifuse structure of claim 1 , the first conductor further comprising: a barrier layer, the barrier layer comprising at least one element taken from the group consisting of: tungsten, titanium and tantalum.
Claim 18
Dependent Claim
21 words
The antifuse structure of claim 16 , wherein the insulating diffusion barrier layer contacts a barrier layer of the second conductor.
Claim 19
Dependent Claim
61 words
The antifuse structure of claim 1 , further comprising: a second antifuse, the second antifuse being disposed between a third portion of the planar upper surface of the first conductor and the second conductor, the insulating diffusion barrier layer extending on a second portion of the planar upper surface of the first conductor from the second antifuse to a first antifuse.
Claim 20
Dependent Claim
135 words
An antifuse structure, comprising: a first conductor, the first conductor having a substantially planar upper surface; a second conductor; an interlayer dielectric layer; a first antifuse comprising a programmable material layer, the first antifuse being disposed between a first portion of the planar upper surface of the first conductor and the second conductor; a second antifuse comprising a programmable material layer, the second antifuse being disposed between a second portion of the planar upper surface of the first conductor and the second conductor; and means for inhibiting diffusion of a contaminant into the first and second antifuses from the interlayer dielectric layer, the means comprising a layer of an insulating material disposed on the sides of the first and second antifuses, the antifuse structure being programmable to couple the first conductor to the second conductor.
Claim 21
Dependent Claim
135 words
An antifuse structure, comprising: a first conductor, the first conductor having a substantially planar upper surface; a second conductor; an interlayer dielectric layer; a first antifuse comprising a programmable material layer, the first antifuse being disposed between a first portion of the planar upper surface of the first conductor and the second conductor; a second antifuse comprising a programmable material layer, the second antifuse being disposed between a second portion of the planar upper surface of the first conductor and the second conductor; and means for inhibiting diffusion of a contaminant into the first and second antifuses from the interlayer dielectric layer, the means comprising a layer of an insulating material disposed on the sides of the first and second antifuses, the antifuse structure being programmable to couple the first conductor to the second conductor.
Claim 22
Dependent Claim
20 words
The antifuse structure of claim 19 , the contaminant being one of copper, fluorine, chlorine, sodium and potassium and moisture.
Claim 23
Dependent Claim
105 words
The antifuse structure of claim 19 , wherein: at least one of the first conductor and the second conductor is a damascene conductor with at least a portion of which has a copper concentration greater than ten percent by weight; the first antifuse being disposed on the first portion of the planar upper surface of the first conductor; the second antifuse being disposed on a second portion of the planar upper surface of the first conductor; and the insulating material is disposed on a third portion of the planar upper surface of the first conductor and extends from the first antifuse to the second antifuse.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-02-03 | 2006-08-05 | 2007-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-02-03 | 2010-08-05 | 2011-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-02-03 | 2014-08-05 | 2015-02-04 | $7700.00 | Window Closed / Lapsed |