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US6496950B1
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Testing content addressable static memories
Assignee: Avago Technologies International Sales Pte Ltd
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Filing: 1999-08-11
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Granted: 2002-12-17
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Expires: 2019-08-11
Abstract
Abstract A CAM testing procedure detects storage logic faults, comparison logic faults, and faults caused by interactions between the storage and comparison logic for both single port and dual port CAM's. To uncover faults in the storage logic, a series of read and write operations are performed, either using a standard test sequence, such as the March C algorithm, or any other desired test sequence. The CAM test, however, intermixes comparison operations with the read and write operations to uncover faults in the comparison logic. For dual port memories, the test sequence comprises executing comparison operations concurrently with the read and/or write operations, thus revealing faults between the storage and comparison logic. For single port memories, the test sequence comprises performing a comparison operation following the read/write operations at each address, immediately verifying the comparison logic at each address.
Inventors
- 👤 Jun Zhao
- 👤 Mukesh Puri
- 👤 V. Swamy Irrinki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:07
CPC Classifications
G; G11; G11C; G11C15/00; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/38
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
309 words
A content addressable memory test circuit, comprising: a memory control logic device configured to implement read, write, and compare memory transactions over word lines, bit lines, and compare lines associated with a content addressable memory array, wherein each memory transaction accesses one word of the memory array; a read register coupling said memory control logic to said test controller, wherein said read register receives data returned from read operations over said bit lines; a write register coupling said memory control logic to said test controller, wherein said memory control logic transfers data from said write register onto said bit lines to execute write operations; a compare register coupling said memory control logic to said test controller, said memory control logic transferring compare words from said compare register to said compare lines to perform compare operations; and a test controller capable of initiating memory operations through said memory control logic, said operations including: initializing each of a plurality of memory addresses within the memory array to a predetermined test word during a first test pass; and performing a plurality of operations at each memory address during a second test pass, the operations at each address including: reading the contents of a current word address, and indicating a fault condition at the current word address if the contents of the current word address do not equal the predetermined test word; comparing the predetermined test word to the contents of the plurality of word addresses in the memory array simultaneously, and determining the address of the first occurring match in the memory array, and indicating a fault condition if the first occurring match is not the current word address, wherein the reading and comparing steps occur concurrently; writing the complement of the predetermined test value to the current word address; and advancing to the next sequential word address within the memory array.
Claim 2
Dependent Claim
309 words
A content addressable memory test circuit, comprising: a memory control logic device configured to implement read, write, and compare memory transactions over word lines, bit lines, and compare lines associated with a content addressable memory array, wherein each memory transaction accesses one word of the memory array; a read register coupling said memory control logic to said test controller, wherein said read register receives data returned from read operations over said bit lines; a write register coupling said memory control logic to said test controller, wherein said memory control logic transfers data from said write register onto said bit lines to execute write operations; a compare register coupling said memory control logic to said test controller, said memory control logic transferring compare words from said compare register to said compare lines to perform compare operations; and a test controller capable of initiating memory operations through said memory control logic, said operations including: initializing each of a plurality of memory addresses within the memory array to a predetermined test word during a first test pass; and performing a plurality of operations at each memory address during a second test pass, the operations at each address including: reading the contents of a current word address, and indicating a fault condition at the current word address if the contents of the current word address do not equal the predetermined test word; comparing the predetermined test word to the contents of the plurality of word addresses in the memory array simultaneously, and determining the address of the first occurring match in the memory array, and indicating a fault condition if the first occurring match is not the current word address, wherein the reading and comparing steps occur concurrently; writing the complement of the predetermined test value to the current word address; and advancing to the next sequential word address within the memory array.
Claim 3
Dependent Claim
18 words
The circuit of claim 1 , wherein each bit of the test word comprises the same binary value.
Claim 4
Dependent Claim
27 words
The circuit of claim 1 , wherein the second pass is performed on the word addresses starting with the lowest address and progressing to the highest address.
Claim 5
Dependent Claim
27 words
The circuit of claim 1 , wherein the second pass is performed on the word addresses starting with the highest address and progressing to the lowest address.
Claim 6
Dependent Claim
43 words
The circuit of claim 1 , wherein the successive compare operations that are performed during the second pass are performed using successive compare words, wherein each successive compare word comprises said one bit in a different bit position than the previous compare word.
Claim 7
Dependent Claim
313 words
A content addressable memory test circuit, comprising: a memory control logic device configured to implement read, write, and compare memory transactions over word lines, bit lines, and compare lines associated with a content addressable memory array, wherein each memory transaction accesses one word of the memory array; a read register coupling said memory control logic to said test controller, wherein said read register receives data returned from read operations over said bit lines; a write register coupling said memory control logic to said test controller, wherein said memory control logic transfers data from said write register onto said bit lines to execute write operations; a compare register coupling said memory control logic to said test controller, said memory control logic transferring compare words from said compare register to said compare lines to perform compare operations; and a test controller capable of initiating memory operations through said memory control logic, said operations including: initializing each of a plurality of memory addresses within the memory array to a predetermined test word during a first test pass; and performing a plurality of operations at each memory address during a second test pass, the operations at each address including: reading the contents of a current word address, and indicating a fault condition at the current word address if the contents of the current word address do not equal the predetermined test word; comparing the predetermined test word to a compare word comprising exactly one bit that matches a bit value in the predetermined test word, and determining the address of the first occurring match in the memory array, and indicating a fault condition if the first occurring match is not the current word address, wherein the reading and comparing steps occur concurrently; writing the complement of the predetermined test value to the current word address; and advancing to the next sequential word address within the memory array.
Claim 8
Dependent Claim
313 words
A content addressable memory test circuit, comprising: a memory control logic device configured to implement read, write, and compare memory transactions over word lines, bit lines, and compare lines associated with a content addressable memory array, wherein each memory transaction accesses one word of the memory array; a read register coupling said memory control logic to said test controller, wherein said read register receives data returned from read operations over said bit lines; a write register coupling said memory control logic to said test controller, wherein said memory control logic transfers data from said write register onto said bit lines to execute write operations; a compare register coupling said memory control logic to said test controller, said memory control logic transferring compare words from said compare register to said compare lines to perform compare operations; and a test controller capable of initiating memory operations through said memory control logic, said operations including: initializing each of a plurality of memory addresses within the memory array to a predetermined test word during a first test pass; and performing a plurality of operations at each memory address during a second test pass, the operations at each address including: reading the contents of a current word address, and indicating a fault condition at the current word address if the contents of the current word address do not equal the predetermined test word; comparing the predetermined test word to a compare word comprising exactly one bit that matches a bit value in the predetermined test word, and determining the address of the first occurring match in the memory array, and indicating a fault condition if the first occurring match is not the current word address, wherein the reading and comparing steps occur concurrently; writing the complement of the predetermined test value to the current word address; and advancing to the next sequential word address within the memory array.
Claim 9
Independent Claim
150 words
A method of testing for faults in a content addressable memory array, comprising: (a) initializing a plurality of word addresses within the memory array to a predetermined test word; (b) reading the contents of a current word address, and indicating a fault condition at the current word address if the contents of the current word address do not equal the predetermined test word; (c) comparing the predetermined test word to the contents of the plurality of word addresses in the array simultaneously, and determining the address of the first occurring match in the memory array, and indicating a fault condition if the first occurring match is not the current word address, wherein step (b) and step (c) occur concurrently; (d) writing the complement of the predetermined test value to the current word address; and (e) advancing to the next sequential word address within the memory array and repeating steps (b)-(e).
Claim 10
Independent Claim
150 words
A method of testing for faults in a content addressable memory array, comprising: (a) initializing a plurality of word addresses within the memory array to a predetermined test word; (b) reading the contents of a current word address, and indicating a fault condition at the current word address if the contents of the current word address do not equal the predetermined test word; (c) comparing the predetermined test word to the contents of the plurality of word addresses in the array simultaneously, and determining the address of the first occurring match in the memory array, and indicating a fault condition if the first occurring match is not the current word address, wherein step (b) and step (c) occur concurrently; (d) writing the complement of the predetermined test value to the current word address; and (e) advancing to the next sequential word address within the memory array and repeating steps (b)-(e).
Claim 11
Dependent Claim
18 words
The method of claim 7 , wherein each bit of the test word comprises the same binary value.
Claim 12
Dependent Claim
26 words
The method of claim 7 , wherein the steps are performed on the word addresses starting with the lowest address and progressing to the highest address.
Claim 13
Dependent Claim
26 words
The method of claim 7 , wherein the steps are performed on the word addresses starting with the highest address and progressing to the lowest address.
Claim 14
Dependent Claim
35 words
The method of claim 7 , wherein successive compare operations are performed using successive compare words, wherein each successive compare word comprises said one bit in a different bit position than the previous compare word.
Claim 15
Independent Claim
155 words
A method of testing for faults in a content addressable memory array, comprising: (a) initializing a plurality of word addresses within the memory array to a predetermined test word; (b) reading the contents of a current word address, and indicating a fault condition at the current word address if the contents of the current word address do not equal the predetermined test word; (c) comparing the predetermined test word to a compare word comprising exactly one bit that matches a bit value in the predetermined test word, and determining the address of the first occurring match in the memory array, and indicating a fault condition if the first occurring match is not the current word address, wherein step (b) and step (c) occur concurrently; (d) writing the complement of the predetermined test value to the current word address; and (e) advancing to the next sequential word address within the memory array and repeating steps (b)-(e).
Claim 16
Independent Claim
155 words
A method of testing for faults in a content addressable memory array, comprising: (a) initializing a plurality of word addresses within the memory array to a predetermined test word; (b) reading the contents of a current word address, and indicating a fault condition at the current word address if the contents of the current word address do not equal the predetermined test word; (c) comparing the predetermined test word to a compare word comprising exactly one bit that matches a bit value in the predetermined test word, and determining the address of the first occurring match in the memory array, and indicating a fault condition if the first occurring match is not the current word address, wherein step (b) and step (c) occur concurrently; (d) writing the complement of the predetermined test value to the current word address; and (e) advancing to the next sequential word address within the memory array and repeating steps (b)-(e).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-12-16 | 2006-06-17 | 2006-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-12-16 | 2010-06-17 | 2010-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-12-16 | 2014-06-17 | 2014-12-17 | $7700.00 | Window Closed / Lapsed |