US6495409B1
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MOS transistor having aluminum nitride gate structure and method of manufacturing same
Assignee: Nokia of America Corp
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Filing: 1999-12-23
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Granted: 2002-12-17
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Expires: 2019-12-23
Abstract
Abstract An MOS transistor comprising a substrate, a source, a drain, and a gate, wherein the gate comprises aluminum nitride. Aluminum nitride is epitaxially grown on the silicon substrate at a substrate temperature of about 600° C. and subsequently annealed at a substrate temperature of about 950° C.
Inventors
- 👤 Michael J. Manfra
- 👤 Loren N. Pfeiffer
- 👤 Kenneth W. West
- 👤 Yiu-Huen Wong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/083; C23C14/58; C23C14/5806; C23C14/5873; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/6349; H10P14/65; H10P14/6516
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
49 words
A method of making an MOS transistor comprising: forming a source and drain in a substrate; and forming a gate on the substrate using an epitaxial growth technique, wherein the gate comprises aluminum nitride and a lattice mismatch between the substrate and the aluminum nitride is less than 18%.
Claim 2
Independent Claim
49 words
A method of making an MOS transistor comprising: forming a source and drain in a substrate; and forming a gate on the substrate using an epitaxial growth technique, wherein the gate comprises aluminum nitride and a lattice mismatch between the substrate and the aluminum nitride is less than 18%.
Claim 3
Dependent Claim
33 words
The method of claim 1 , further comprising forming a substrate electrode, a source electrode, a drain electrode, and a gate electrode on the substrate, the source, the drain, and the gate, respectively.
Claim 4
Dependent Claim
15 words
The method of claim 1 , wherein the epitaxial growth technique is molecular beam epitaxy.
Claim 5
Dependent Claim
14 words
The method of claim 1 , wherein the substrate is a (111) silicon substrate.
Claim 6
Dependent Claim
15 words
The method of claim 4 , wherein the aluminum nitride is α-phase hexagonal aluminum nitride.
Claim 7
Dependent Claim
26 words
The method of claim 5 , wherein the α-phase hexagonal aluminum nitride is epitaxially grown with a nominal 18% lattice mismatch to the (111) silicon substrate.
Claim 8
Dependent Claim
14 words
The method of claim 1 , wherein the substrate is a (100) silicon substrate.
Claim 9
Dependent Claim
18 words
The method of claim 7 , wherein the aluminum nitride is β-phase crystalline form of cubic aluminum nitride.
Claim 10
Dependent Claim
29 words
The method of claim 8 , wherein the β-phase crystalline form of cubic aluminum nitride is epitaxially grown with a nominal 18% lattice mismatch to the (100) silicon substrate.
Claim 11
Dependent Claim
18 words
The method of claim 7 , wherein the aluminum nitride is β-phase crystalline form of zincblend aluminum nitride.
Claim 12
Dependent Claim
14 words
The method of claim 1 , wherein the substrate is a (110) silicon substrate.
Claim 13
Dependent Claim
18 words
The method of claim 11 , wherein the aluminum nitride is β-phase crystalline form of cubic aluminum nitride.
Claim 14
Dependent Claim
29 words
The method of claim 12 , wherein the β-phase crystalline form of cubic aluminum nitride is epitaxially grown with a nominal 18% lattice mismatch to the (110) silicon substrate.
Claim 15
Dependent Claim
18 words
The method of claim 11 , wherein the aluminum nitride is β-phase crystalline form of zincblend aluminum nitride.
Claim 16
Independent Claim
63 words
A method of forming an aluminum nitride film on a silicon substrate comprising: epitaxially growing aluminum nitride on the silicon substrate at a substrate temperature of about 600° C., the silicon substrate and the aluminum nitride film having a lattice mismatch of less than 18%; and subsequently annealing the substrate and epitaxially grown aluminum nitride at a substrate temperature of about 950° C.
Claim 17
Independent Claim
63 words
A method of forming an aluminum nitride film on a silicon substrate comprising: epitaxially growing aluminum nitride on the silicon substrate at a substrate temperature of about 600° C., the silicon substrate and the aluminum nitride film having a lattice mismatch of less than 18%; and subsequently annealing the substrate and epitaxially grown aluminum nitride at a substrate temperature of about 950° C.
Claim 18
Dependent Claim
14 words
The method of claim 15 , wherein the annealing is performed for 10 minutes.
Claim 19
Dependent Claim
22 words
The method of claim 15 , wherein the aluminum nitride is epitaxially grown at a rate of about 0.1 monolayer per second.
Claim 20
Dependent Claim
15 words
The method of claim 15 , wherein the aluminum nitride file is 10-100 Å thick.
Claim 21
Dependent Claim
16 words
The method of claim 15 , wherein the aluminum nitride is grown by molecular beam epitaxy.
Claim 22
Dependent Claim
14 words
The method of claim 15 , wherein the substrate is a (111) silicon substrate.
Claim 23
Dependent Claim
15 words
The method of claim 20 , wherein the aluminum nitride is α-phase hexagonal aluminum nitride.
Claim 24
Dependent Claim
26 words
The method of claim 21 , wherein the α-phase hexagonal aluminum nitride is epitaxially grown with a nominal 18% lattice mismatch to the (111) silicon substrate.
Claim 25
Dependent Claim
14 words
The method of claim 18 , wherein the substrate is a (100) silicon substrate.
Claim 26
Dependent Claim
18 words
The method of claim 23 , wherein the aluminum nitride is β-phase crystalline form of cubic aluminum nitride.
Claim 27
Dependent Claim
29 words
The method of claim 24 , wherein the β-phase crystalline form of cubic aluminum nitride is epitaxially grown with a nominal 18% lattice mismatch to the (100) silicon substrate.
Claim 28
Dependent Claim
18 words
The method of claim 23 , wherein the aluminum nitride is β-phase crystalline form of zincblend aluminum nitride.
Claim 29
Dependent Claim
14 words
The method of claim 15 , wherein the substrate is a (110) silicon substrate.
Claim 30
Dependent Claim
18 words
The method of claim 27 , wherein the aluminum nitride is β-phase crystalline form of cubic aluminum nitride.
Claim 31
Dependent Claim
29 words
The method of claim 27 , wherein the β-phase crystalline form of cubic aluminum nitride is epitaxially grown with a nominal 18% lattice mismatch to the (110) silicon substrate.
Claim 32
Dependent Claim
18 words
The method of claim 27 , wherein the aluminum nitride is β-phase crystalline form of zincblend aluminum nitride.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-12-16 | 2006-06-17 | 2006-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-12-16 | 2010-06-17 | 2010-12-17 | $3760.00 | Window Closed / Lapsed |
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