Patent US7088964B2 successfully refreshed from Google Patents.
US6489680B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Murata Manufacturing Co Ltd
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Filing: 2001-10-05
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Granted: 2002-12-03
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Expires: 2021-10-05
Abstract
Abstract In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
Inventors
- 👤 Iwamichi Kohjiro
- 👤 Yasuhiro Nunogawa
- 👤 Sakae Kikuchi
- 👤 Shizuo Kondo
- 👤 Tetsuaki Adachi
- 👤 Osamu Kagaya
- 👤 Kenji Sekine
- 👤 Eiichi Hase
- 👤 Kiichi Yamashita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:16
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H03; H03F; H03F1/00; H03F1/56; H03F3/00; H03F3/189; H03F3/19; H03F3/195; H03F3/20; H03F3/21; H03F3/213; H03F3/60; H03F3/602; H03F3/604; H10W42/00; H10W42/20; H10W42/261; H10W42/265; H10W44/00; H10W44/20; H10W44/501; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W70/657; H10W70/658; H10W70/67; H10W70/68; H10W70/685; H10W76/00; H10W76/10; H10W76/12; H10W90/00; H03F2200/00; H03F2200/12; H03F2200/168; H03F2200/222; H03F2200/255; H03F2200/318; H03F2200/387; H03F2200/408; H03F2200/411; H03F2200/423; H03F2200/451; H03F2200/543; H03H; H03H7/00; H03H7/38; H03H7/383; H05; H05K; H05K1/00; H05K1/02; H05K1/0213; H05K1/0237; H05K1/0243; H05K1/0296; H05K1/0298; H05K1/18; H05K1/182; H05K1/183; H05K3/00; H05K3/40; H05K3/403; H10W44/203; H10W44/206; H10W44/216; H10W44/226; H10W44/234; H10W70/654; H10W70/655; H10W70/682; H10W72/071; H10W72/075; H10W72/07551; H10W72/07552; H10W72/07554; H10W72/50; H10W72/521; H10W72/522; H10W72/541; H10W72/5445; H10W72/547; H10W72/5473; H10W72/5475; H10W72/551; H10W72/552; H10W72/5525; H10W72/555; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/931; H10W72/932; H10W72/951; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
320 words
A semiconductor device comprising: a semiconductor chip having a square surface; a wiring substrate having a main surface thereof used for mounting said semiconductor chip; a first electrode formed on a first area of a main surface of said semiconductor chip and placed at a location in close proximity to a side of said semiconductor chip extending in a first direction; first amplifying means formed on said first area of said main surface of said semiconductor chip and provided with an input unit electrically connected to said first electrode; a second electrode formed on a second area of said main surface of said semiconductor chip and placed at a location in close proximity to said side of said semiconductor chip; second amplifying means formed on said second area of said main surface of said semiconductor chip and provided with an output unit electrically connected to said second electrode; a third electrode formed on a third area between said first and second areas of said main surface of said semiconductor chip; a fourth electrode formed on said main surface of said wiring substrate to face said side of said semiconductor chip and electrically connected to said first electrode by a first wire; a fifth electrode formed on said main surface of said wiring substrate to face said side of said semiconductor chip and electrically connected to said second electrode by a second wire; and a sixth electrode formed on said main surface of said wiring substrate to face said side of said semiconductor chip and electrically connected to said third electrode by a third wire with an electric potential thereof fixed at a reference level, wherein said first to third wires extend in a second direction which is substantially perpendicular to said first direction, wherein said sixth electrode is placed at a location farther from said side of said semiconductor chip than said fourth and fifth electrodes in said second direction.
Claim 2
Dependent Claim
320 words
A semiconductor device comprising: a semiconductor chip having a square surface; a wiring substrate having a main surface thereof used for mounting said semiconductor chip; a first electrode formed on a first area of a main surface of said semiconductor chip and placed at a location in close proximity to a side of said semiconductor chip extending in a first direction; first amplifying means formed on said first area of said main surface of said semiconductor chip and provided with an input unit electrically connected to said first electrode; a second electrode formed on a second area of said main surface of said semiconductor chip and placed at a location in close proximity to said side of said semiconductor chip; second amplifying means formed on said second area of said main surface of said semiconductor chip and provided with an output unit electrically connected to said second electrode; a third electrode formed on a third area between said first and second areas of said main surface of said semiconductor chip; a fourth electrode formed on said main surface of said wiring substrate to face said side of said semiconductor chip and electrically connected to said first electrode by a first wire; a fifth electrode formed on said main surface of said wiring substrate to face said side of said semiconductor chip and electrically connected to said second electrode by a second wire; and a sixth electrode formed on said main surface of said wiring substrate to face said side of said semiconductor chip and electrically connected to said third electrode by a third wire with an electric potential thereof fixed at a reference level, wherein said first to third wires extend in a second direction which is substantially perpendicular to said first direction, wherein said sixth electrode is placed at a location farther from said side of said semiconductor chip than said fourth and fifth electrodes in said second direction.
Claim 3
Dependent Claim
40 words
A semiconductor device according to claim 1 , wherein said fourth electrode is placed at a distance from said side of said semiconductor chip about equal to a distance of said fifth electrode from said side of said semiconductor chip.
Claim 4
Dependent Claim
29 words
A semiconductor device according to claim 1 , wherein an input unit of said second amplifying means is electrically connected to an output unit of said first amplifying means.
Claim 5
Dependent Claim
32 words
A semiconductor device according to claim 1 , wherein a signal input in said fourth electrode is amplified by said first and second amplifying means and is output from said fifth electrode.
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