US6489628B1
Expired / Lapsed
US
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High electron mobility transistor and power amplifier
Assignee: Toshiba Corp
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Filing: 2000-06-29
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Granted: 2002-12-03
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Expires: 2020-06-29
Abstract
Abstract According to this invention, a group III nitride inverted high electron mobility transistor, and a power amplifier using the same are provided. A transistor and power amplifier according to this invention are characterized in that the lattice constant of a bulk of a donor layer is larger than that of an underlayer containing a group III nitride compound semiconductor material, or the donor layer is made of impurity-doped AlyGa(1-y)N, the underlayer is made of undoped AlxGa(1-x)N, and x and y satisfy an inequality 0<=y<x<=1.
Inventors
- 👤 Mayumi Morizuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:04
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/472; H10D62/00; H10D62/80; H10D62/85; H10D62/8503
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
134 words
A group III nitride inverted high electron mobility transistor comprising: an underlayer comprising a first group III nitride compound semiconductor material; a donor layer formed on said underlayer and comprising a second group III nitride compound semiconductor material, a lattice constant of a bulk of said donor layer being larger than a lattice constant of said underlayer; a channel layer formed on said donor layer and comprising a third group III nitride compound semiconductor material; and gate, source, and drain electrodes formed on said channel layer, wherein the first group III nitride compound semiconductor material is Al x Ga (1−x) N, the second group III nitride compound semiconductor material is Al y Ga (1−y) N, x and y satisfy an inequality of 0≦y<x≦1, and the third group III nitride compound semiconductor material is GaN.
Claim 2
Dependent Claim
134 words
A group III nitride inverted high electron mobility transistor comprising: an underlayer comprising a first group III nitride compound semiconductor material; a donor layer formed on said underlayer and comprising a second group III nitride compound semiconductor material, a lattice constant of a bulk of said donor layer being larger than a lattice constant of said underlayer; a channel layer formed on said donor layer and comprising a third group III nitride compound semiconductor material; and gate, source, and drain electrodes formed on said channel layer, wherein the first group III nitride compound semiconductor material is Al x Ga (1−x) N, the second group III nitride compound semiconductor material is Al y Ga (1−y) N, x and y satisfy an inequality of 0≦y<x≦1, and the third group III nitride compound semiconductor material is GaN.
Claim 3
Dependent Claim
25 words
A transistor according to claim 1 , further comprising an Al y Ga (1−y) N spacer layer between said donor layer and said channel layer.
Claim 4
Dependent Claim
39 words
A transistor according to claim 1 , further comprising a substrate and a nucleation layer formed on said substrate, and wherein said underlayer is formed by crystal growth, and said nucleation layer provides a nucleus for the crystal growth.
Claim 5
Dependent Claim
136 words
A group III nitride inverted high electron mobility transistor comprising: an underlayer comprising a first group III nitride compound semiconductor material; a donor layer formed on said underlayer and comprising a second group III nitride compound semiconductor material, a lattice constant of a bulk of said donor layer being larger than a lattice constant of said underlayer; a channel layer formed on said donor layer and comprising a third group III nitride compound semiconductor material; and gate, source, and drain electrodes formed on said channel layer, wherein the first group III nitride compound semiconductor material is Al x Ga (1−x) N, the second group III nitride compound semiconductor material is GaN, the third group III nitride compound semiconductor material is In z Ga (1−z) N, and x and z respectively satisfy the inequalities 0<x<0 and 0<z<1.
Claim 6
Dependent Claim
136 words
A group III nitride inverted high electron mobility transistor comprising: an underlayer comprising a first group III nitride compound semiconductor material; a donor layer formed on said underlayer and comprising a second group III nitride compound semiconductor material, a lattice constant of a bulk of said donor layer being larger than a lattice constant of said underlayer; a channel layer formed on said donor layer and comprising a third group III nitride compound semiconductor material; and gate, source, and drain electrodes formed on said channel layer, wherein the first group III nitride compound semiconductor material is Al x Ga (1−x) N, the second group III nitride compound semiconductor material is GaN, the third group III nitride compound semiconductor material is In z Ga (1−z) N, and x and z respectively satisfy the inequalities 0<x<0 and 0<z<1.
Claim 7
Dependent Claim
21 words
A transistor according to claim 4 , further comprising a GaN spacer layer between said donor layer and said channel layer.
Claim 8
Dependent Claim
38 words
A transistor according to claim 4 , further comprising a substrate and a nucleation layer formed on said substrate, wherein said underlayer is formed by crystal growth, and said nucleation layer provides a nucleus for the crystal growth.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-12-02 | 2006-06-03 | 2006-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-12-02 | 2010-06-03 | 2010-12-03 | $3760.00 | Window Closed / Lapsed |
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