Patent US6476454B2 successfully refreshed from Google Patents.
US6476454B2
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Semiconductor device and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 2001-03-26
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Granted: 2002-11-05
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Expires: 2021-03-26
Abstract
Abstract Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating film and a gate electrode formed on the semiconductor substrate, source-drain regions formed in the semiconductor substrate, and a metal oxide layer formed selectively on the gate electrode. The gate electrode is formed of a first metal, and the metal oxide layer contains a second metal having a reduction amount of a Gibbs standard free energy in forming an oxide that is larger than that of the first metal.
Inventors
- 👤 Kyoichi Suguro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:51
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01318; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/01344; H10D64/017; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/667; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10P30/21; H10P30/212; H10P30/225; H10P30/226
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
124 words
A semiconductor device, comprising: a semiconductor substrate; an insulating film formed on said semiconductor substrate and a gate electrode formed on said insulating film; source-drain regions formed in said semiconductor substrate; a metal oxide layer formed selectively on said gate electrode; and an interlayer insulating film formed of a silicon oxide film; wherein said gate electrode is formed of a first metal, and said metal oxide layer contains a second metal having a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal, and wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide that is larger than that of the material forming said interlayer insulating film.
Claim 2
Dependent Claim
124 words
A semiconductor device, comprising: a semiconductor substrate; an insulating film formed on said semiconductor substrate and a gate electrode formed on said insulating film; source-drain regions formed in said semiconductor substrate; a metal oxide layer formed selectively on said gate electrode; and an interlayer insulating film formed of a silicon oxide film; wherein said gate electrode is formed of a first metal, and said metal oxide layer contains a second metal having a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal, and wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide that is larger than that of the material forming said interlayer insulating film.
Claim 3
Dependent Claim
30 words
The semiconductor device according to claim 1 , wherein said first metal consists of at least one element selected from the group consisting of W, Mo, Ru, Ag and Cu.
Claim 4
Dependent Claim
37 words
The semiconductor device according to claim 1 , wherein said second metal consists of at least one element selected from the group consisting of Al, Ti, Zr, Hf, Nb, Ta, Ba, Sr, Y and La series elements.
Claim 5
Dependent Claim
21 words
The semiconductor device according to claim 1 , wherein said metal oxide layer has a thickness of 1 to 50 nm.
Claim 6
Dependent Claim
64 words
The semiconductor device according to claim 1 , further comprising a layer of a third metal or a compound of said third metal formed on the bottom surface of said gate electrode, said third metal not being alloyed or not forming a compound with said first metal and the crystal grain diameter of said third metal being smaller than that of said first metal.
Claim 7
Dependent Claim
67 words
The semiconductor device according to claim 1 , further comprising a layer of a third metal or a compound of said third metal formed on the bottom surface and side surface of said gate electrode, said third metal not being alloyed or not forming a compound with said first metal and the crystal grain diameter of said third metal being smaller than that of said first metal.
Claim 8
Dependent Claim
37 words
The semiconductor device according to claim 2 , wherein said second metal consists of at least one element selected from the group consisting of Al, Ti, Zr, Hf, Nb, Ta, Ba, Sr, Y and La series elements.
Claim 9
Dependent Claim
21 words
The semiconductor device according to claim 2 , wherein said metal oxide layer has a thickness of 1 to 50 nm.
Claim 10
Dependent Claim
21 words
The semiconductor device according to claim 3 , wherein said metal oxide layer has a thickness of 1 to 50 nm.
Claim 11
Dependent Claim
123 words
A semiconductor device, comprising: a semiconductor substrate; an insulating film formed on said semiconductor substrate and a gate electrode formed on said insulating film; source-drain regions formed in said semiconductor substrate; a metal oxide layer formed selectively on said gate electrode; and an interlayer insulating film including a silicon oxide film; wherein said gate electrode is formed of a first metal, and said metal oxide layer contains a second metal having a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal, and wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide that is larger than that of the material forming said interlayer insulating film.
Claim 12
Dependent Claim
123 words
A semiconductor device, comprising: a semiconductor substrate; an insulating film formed on said semiconductor substrate and a gate electrode formed on said insulating film; source-drain regions formed in said semiconductor substrate; a metal oxide layer formed selectively on said gate electrode; and an interlayer insulating film including a silicon oxide film; wherein said gate electrode is formed of a first metal, and said metal oxide layer contains a second metal having a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal, and wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide that is larger than that of the material forming said interlayer insulating film.
Claim 13
Dependent Claim
30 words
The semiconductor device according to claim 10 , wherein said first metal consists of at least one element selected from the group consisting of W, Mo, Ru, Ag and Cu.
Claim 14
Dependent Claim
37 words
The semiconductor device according to claim 10 , wherein said second metal consists of at least one element selected from the group consisting of Al, Ti, Zr, Hf, Nb, Ta, Ba, Sr, Y and La series elements.
Claim 15
Dependent Claim
21 words
The semiconductor device according to claim 10 , wherein said metal oxide layer has a thickness of 1 to 50 nm.
Claim 16
Dependent Claim
64 words
The semiconductor device according to claim 10 , further comprising a layer of a third metal or a compound of said third metal formed on the bottom surface of said gate electrode, said third metal not being alloyed or not forming a compound with said first metal and the crystal grain diameter of said third metal being smaller than that of said first metal.
Claim 17
Dependent Claim
67 words
The semiconductor device according to claim 10 , further comprising a layer of a third metal or a compound of said third metal formed on the bottom surface and side surface of said gate electrode, said third metal not being alloyed or not forming a compound with said first metal and the crystal grain diameter of said third metal being smaller than that of said first metal.
Claim 18
Dependent Claim
37 words
The semiconductor device according to claim 11 , wherein said second metal consists of at least one element selected from the group consisting of Al, Ti, Zr, Hf, Nb, Ta, Ba, Sr, Y and La series elements.
Claim 19
Dependent Claim
21 words
The semiconductor device according to claim 11 , wherein said metal oxide layer has a thickness of 1 to 50 nm.
Claim 20
Dependent Claim
21 words
The semiconductor device according to claim 12 , wherein said metal oxide layer has a thickness of 1 to 50 nm.
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