Patent US6475910B1 successfully refreshed from Google Patents.
US6475910B1
Expired / Lapsed
US
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Radical-assisted sequential CVD
Assignee: Aixtron Inc
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Filing: 2000-09-22
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Granted: 2002-11-05
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Expires: 2020-09-22
Abstract
Abstract A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.
Inventors
- 👤 Ofer Sneh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/4554; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
129 words
A repetitive process for extending thickness of a metal film on a substrate, comprising the steps of: (a) exposing the film to a gaseous radical species selected to react with the film, forming in the reaction ligands chemically-bonded to the metal of the film, the ligands including a species reactive with a gaseous precursor compound of the metal of the film with at least one other element; (b) exposing the film following the treatment in step (a) to the gaseous precursor compound of the metal of the film with at least one other element, the ligands formed in step (a) reacting with the gaseous precursor to form thereby an extension of the thickness of the metal film; and (c) repeating the steps in order to attain a desired thickness.
Claim 2
Dependent Claim
129 words
A repetitive process for extending thickness of a metal film on a substrate, comprising the steps of: (a) exposing the film to a gaseous radical species selected to react with the film, forming in the reaction ligands chemically-bonded to the metal of the film, the ligands including a species reactive with a gaseous precursor compound of the metal of the film with at least one other element; (b) exposing the film following the treatment in step (a) to the gaseous precursor compound of the metal of the film with at least one other element, the ligands formed in step (a) reacting with the gaseous precursor to form thereby an extension of the thickness of the metal film; and (c) repeating the steps in order to attain a desired thickness.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein the radical species is atomic hydrogen.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein the gaseous precursor compound bearing the metal is tungsten hexafluoride and the metal deposited is tungsten.
Claim 5
Dependent Claim
22 words
The process of claim 1 wherein the gaseous precursor compound bearing the metal is tantalum pentachloride and the metal deposited is tantalum.
Claim 6
Dependent Claim
26 words
The process of claim 1 wherein the gaseous precursor compound bearing the metal is one of trimethylaluminum or aluminum trichloride and the metal deposited is aluminum.
Claim 7
Dependent Claim
27 words
The process of claim 1 wherein the gaseous precursor compound bearing the metal is one of titanium tetrachloride or titanium tetraiodide and the metal deposited is titanium.
Claim 8
Dependent Claim
22 words
The process of claim 1 wherein the gaseous precursor compound bearing the metal is molybdenum hexafluoride and the metal deposited is molybdenum.
Claim 9
Dependent Claim
22 words
The process of claim 1 wherein the gaseous precursor compound bearing the metal is zinc dichloride and the metal deposited is zinc.
Claim 10
Dependent Claim
22 words
The process of claim 1 wherein the gaseous precursor compound bearing the metal is hafnium tetrachloride and the metal deposited is hafnium.
Claim 11
Dependent Claim
22 words
The process of claim 1 wherein the gaseous precursor compound bearing the metal is niobium pentachloride and the metal deposited is niobium.
Claim 12
Dependent Claim
23 words
The process of claim 1 wherein the gaseous precursor compound is copper chloride Cu 3 Cl 3 and the metal deposited is copper.
Claim 13
Dependent Claim
81 words
A process for building a metal film on a substrate surface, wherein deposition steps comprising flowing a metal precursor gas or vapor over the surface with the surface terminated with a first chemical species reactive with the metal precursor, depositing thereby the metal, are alternated with steps comprising flowing radical species over the freshly deposited metal layers removing the ligands from the deposition steps and providing the first chemical species to terminate the substrate surface preparatory to the next deposition reaction.
Claim 14
Dependent Claim
81 words
A process for building a metal film on a substrate surface, wherein deposition steps comprising flowing a metal precursor gas or vapor over the surface with the surface terminated with a first chemical species reactive with the metal precursor, depositing thereby the metal, are alternated with steps comprising flowing radical species over the freshly deposited metal layers removing the ligands from the deposition steps and providing the first chemical species to terminate the substrate surface preparatory to the next deposition reaction.
Claim 15
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is tungsten hexaflouride, the radical species comprises ionized hydrogen, and the metal deposited is tungsten.
Claim 16
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is tantalum pentachloride, the radical species comprises ionized hydrogen, and the metal deposited is tantalum.
Claim 17
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is aluminum trichloride, the radical species comprises ionized hydrogen, and the metal deposited is aluminum.
Claim 18
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is trimethyl aluminum, the radical species comprises ionized hydrogen, and the metal deposited is aluminum.
Claim 19
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is titanium tetrachloride, the radical species comprises ionized hydrogen, and the metal deposited is titanium.
Claim 20
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is titanium tetraiodide, the radical species comprises ionized hydrogen, and the metal deposited is titanium.
Claim 21
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is molybdenum hexaflouride, the radical species comprises ionized hydrogen, and the metal deposited is molybdenum.
Claim 22
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is zinc dichloride, the radical species comprises ionized hydrogen, and the metal deposited is zinc.
Claim 23
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is hafnium tetrachloride, the radical species comprises ionized hydrogen, and the metal deposited is hafnium.
Claim 24
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is niobium pentachloride, the radical species comprises ionized hydrogen, and the metal deposited is niobium.
Claim 25
Dependent Claim
25 words
The process of claim 12 wherein the metal precursor gas is copper chloride, the radical species comprises ionized hydrogen, and the metal deposited is copper.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-11-04 | 2006-05-06 | 2006-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-11-04 | 2010-05-06 | 2010-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-11-04 | 2014-05-06 | 2014-11-05 | $7700.00 | Window Closed / Lapsed |