US6465340B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Via filled dual damascene structure with middle stop layer and method for making the same
Assignee: Advanced Micro Devices Inc
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Filing: 2001-02-06
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Granted: 2002-10-15
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Expires: 2021-02-06
Abstract
Abstract An interconnect structure and method of forming the same in which a first inorganic low k dielectric material is deposited over a conductive layer to form a first dielectric layer. An etch stop layer is formed on the first dielectric layer. The etch stop layer and the first dielectric layer are etched to form a via in the first dielectric layer. A second low k dielectric material is deposited within the via and over the etch stop layer to form a second dielectric layer over the via and the etch stop layer. The re-filled via is simultaneously etched with the second dielectric layer in which a trench is formed. A portion of the trench is directly over the via. The re-opened via and the trench are filled with a conductive material.
Inventors
- 👤 Fei Wang
- 👤 Lynne A. Okada
- 👤 Ramkumar Subramanian
- 👤 Calvin T. Gabriel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/085; H10W20/0886
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
133 words
A method of forming an interconnect structure, comprising the steps of: depositing a first low k dielectric material over a conductive layer to form a first dielectric layer; forming an etch stop layer on the first dielectric layer; etching the etch stop layer and the first dielectric layer to form a via in the first dielectric layer; depositing a second low k dielectric material in the via and over the etch stop layer to form a second dielectric layer over the via and the etch stop layer; simultaneously etching the via and a trench in the second dielectric layer, with at least a portion of the trench being directly over the via; wherein the first low k dielectric material and the second low k dielectric material are both inorganic low k dielectric materials.
Claim 2
Independent Claim
133 words
A method of forming an interconnect structure, comprising the steps of: depositing a first low k dielectric material over a conductive layer to form a first dielectric layer; forming an etch stop layer on the first dielectric layer; etching the etch stop layer and the first dielectric layer to form a via in the first dielectric layer; depositing a second low k dielectric material in the via and over the etch stop layer to form a second dielectric layer over the via and the etch stop layer; simultaneously etching the via and a trench in the second dielectric layer, with at least a portion of the trench being directly over the via; wherein the first low k dielectric material and the second low k dielectric material are both inorganic low k dielectric materials.
Claim 3
Dependent Claim
27 words
The method of claim 1 , wherein the first low k dielectric material and the second low k dielectric material are different inorganic low k dielectric materials.
Claim 4
Dependent Claim
28 words
The method of claim 1 , wherein the first low k dielectric material and the second low k dielectric material are the same inorganic low k dielectric materials.
Claim 5
Dependent Claim
18 words
The method of claim 1 , further comprising depositing conductive material simultaneously in the via and the trench.
Claim 6
Dependent Claim
12 words
The method of claim 4 , wherein the conductive material is copper.
Claim 7
Dependent Claim
32 words
The method of claim 1 , wherein the first and second low k dielectric materials are selected from at least one of methyl silsesquioxane (MSQ), hydrogen silsesquioxane (HSQ), and fluorine tetraethylorthosilicate (FTEOS).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-10-14 | 2006-04-15 | 2006-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-10-14 | 2010-04-15 | 2010-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-10-14 | 2014-04-15 | 2014-10-15 | $7700.00 | Window Closed / Lapsed |