Projection optical system and projection exposure apparatus with the same, and device manufacturing method

Claim 2

A projection optical system for projecting an image of an object onto an image plane, said projection optical system comprising: a plurality of lens groups including a positive lens group having a positive refractive power and a negative lens group having a negative refractive power, wherein, when a conjugate length of said projection optical system is L and the total power of the negative lens group or groups is φ 0 , a relation 70 >|L×φ 0 |>17 is satisfied, wherein φ 0 =Σφ 0i , where φ 0i is the power of the i-th negative lens group, wherein, when a height of an axial marginal light ray is h and a height of a most abaxial chief ray is h b , at least two surfaces which satisfy a relation 15 >|h b /h |>0.35 are aspherical surfaces, wherein, when an aspherical amount of an aspherical surface is ΔASPH, said at least two aspherical surfaces satisfy a relation 0.02 >|ΔASPH/L |>1.0×10 −5 and they include two aspherical surfaces having regions in which, from a center of the surface to a periphery thereof, their local curvature powers change with opposite signs, and wherein at least one of said at least two aspherical surfaces comprises one surface of an aspherical surface lens having one face defined by an aspherical surface and another face defined by a flat surface.

Claim 3

A projection optical system according to claim 1 , wherein each aspherical surface lens of said projection optical system comprises an aspherical surface lens having one face defined by an aspherical surface and another face defined by a flat surface.

Claim 4

A projection optical system according to claim 1 , wherein, when a maximum effective diameter of said projection optical system is h max and the effective diameter of each surface is h ea , plural aspherical surfaces are formed at those faces that satisfy a relation: 1.0 ≧h ea /h max >0.70.

Claim 5

A projection exposure apparatus, arranged to project a pattern of a reticle onto a photosensitive substrate by use of a projection optical system as recited in claim 1 and in accordance with one of a step-and-repeat method and a step-and-scan method.

Claim 6

A device manufacturing method comprising: a first step of transferring, by projection exposure, a pattern of a reticle onto a wafer surface by use of a projection optical system as recited in claim 1 ; and developing the wafer after the first step, for production of devices.

Claim 7

A projection optical system for projecting an image of an object onto an image plane, said projection optical system comprising: a positive lens group and a negative lens group disposed in this order from the object side, wherein, when a conjugate length of said projection optical system is L and the total power of the negative lens group or groups is φ 0 , a relation 70 >|L×φ 0 |>17 is satisfied, wherein φ 0 =Σφ 0i , where φ 0i is the power of the i-th negative lens group, wherein, when a height of an axial marginal light ray is h and a height of a most abaxial chief ray is h b , said negative lens group has plural aspherical surfaces which satisfy a relation 15 >|h b /h |>0.35; wherein, when an aspherical amount of an aspherical surface is ΔASPH, said plural aspherical surfaces satisfy a relation 0.02 >|ΔASPH/L |>1.0×10 −5 , wherein at least one of said plural aspherical surfaces has a region in which, from a center of the surface to a periphery thereof, a local curvature power gradually increases in a negative direction or gradually decreases in a positive direction, and wherein at least one of said at least two aspherical surfaces comprises one surface of an aspherical surface lens having one face defined by an aspherical surface and another face defined by a flat surface.

Claim 8

A projection optical system for projecting an image of an object onto an image plane, said projection optical system comprising: a positive lens group and a negative lens group disposed in this order from the object side, wherein, when a conjugate length of said projection optical system is L and the total power of the negative lens group or groups is φ 0 , a relation 70 >|L×φ 0 |>17 is satisfied, wherein φ 0 =Σφ 0i , where φ 0i is the power of the i-th negative lens group, wherein, when a height of an axial marginal light ray is h and a height of a most abaxial chief ray is h b , said negative lens group has plural aspherical surfaces which satisfy a relation 15 >|h b /h |>0.35; wherein, when an aspherical amount of an aspherical surface is ΔASPH, said plural aspherical surfaces satisfy a relation 0.02 >|ΔASPH/L |>1.0×10 −5 , wherein at least one of said plural aspherical surfaces has a region in which, from a center of the surface to a periphery thereof, a local curvature power gradually increases in a negative direction or gradually decreases in a positive direction, and wherein at least one of said at least two aspherical surfaces comprises one surface of an aspherical surface lens having one face defined by an aspherical surface and another face defined by a flat surface.

Claim 9

A projection optical system according to claim 6 , wherein each aspherical surface lens of said projection optical system comprises an aspherical surface lens having one face defined by an aspherical surface and another face defined by a flat surface.

Claim 10

A projection optical system according to claim 6 , wherein, when a maximum effective diameter of said projection optical system is h max and the effective diameter of each surface is h ea , plural aspherical surfaces are formed at those faces that satisfy a relation: 1.0 ≧h ea /h max >0.70.

Claim 11

A projection exposure apparatus, arranged to project a pattern of a reticle onto a photosensitive substrate by use of a projection optical system as recited in claim 6 and in accordance with one of a step-and-repeat method and a step-and-scan method.

Claim 12

A device manufacturing method comprising: a first step of transferring, by projection exposure, a pattern of a reticle onto a wafer surface by use of a projection optical system as recited in claim 6 ; and developing the wafer after the first step, for production of devices.